SINO-IC-SE3N150P

Oct 2014  

SE3N150P  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

This series is a high voltage power MOSFET

 

For a single MOSFET  

and is designed to have better characteristics,  

such as fast switching time, low gate charge,  





V

DS

= 1500V  

R

DS(ON)

=6Ω @ V

GS

=10V  

low on-state resistance and have  

rugged avalanche characteristics  

a high  

Pin configurations  

See Diagram below  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

Rating  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

1500  

±

20  

3

V

V

V

GS  

Continuous  

Drain Current  

Pulsed  

I

D  

A

12  

63  

Power Dissipation  

P

D  

T

J  

W

Operating Junction

T

emperature Range  

-55 to 150  

℃

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE3N150P  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

V

GS

=0 V, I

D

=250μA,  

V

DS

=1200V, V

GS

=0V  

V

GS

=20V  

1500  

V

μA  

nA  

V

1

I

GSS  

100  

5.0  

7.2  

V

GS(th)  

R

DS(ON)  

V

DS

= V

GS

, I

D

=250μA  

3.0  

Static Drain-Source On-Resistance

2

V

GS

=10V, I

D

=1.5A  

6

Ω

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

1348  

101  

15  

pF  

pF  

pF  

V

GS

=0V, V

DS

=25V,  

Output Capacitance  

f=1MHz  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

t

d(on)  

t

d(off)  

t

d(r)  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

V

DS

=750V, R

L

=25Ω  

I

D

=3.0A  

45  

ns  

ns  

ns  

ns  

224  

22.5  

55.5  

t

d(f)  

Source-Drain Diode Characteristics  

V

SD  

t

rr  

Drain-Source Diode Forward Voltage  

Reverse Recovery Time  

V

GS

=0V,I

S

=2A  

1.4  

V

VGS=0V,IS=3.0A  

dI

F

/dt=100A/μs

1  

647.5  

ns  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE3N150

P

 

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE3N150

P  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE3N150

P  

Package Outline Dimension  

TO-3P  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.