SINO-IC-SE40P20B

SE40P20B  

P-Channel MOSFET  

Revision: A  

General Description  

Features  

This series is a high voltage power MOSFET

 

For a single MOSFET  

and is designed to have better characteristics,  

such as fast switching time, low gate charge,  





V

DS

= -40V  

R

low on-state resistance and have  

rugged avalanche characteristics  

a high  

Pin configurations  

See Diagram below  

Absolute Maximum Ratings  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

Rating  

-40  

Units  

V

V

Gate-Source Voltage  

V

GS  

±

20  

-20  

Continuous  

Drain Current  

Pulsed  

I

D  

A

-50  

80  

Power Dissipation  

P

D  

T

J  

W

Operating Junction

T

e

mperature Range  

-55 to 150  

℃

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

R

θ

JA  

Junction to Ambient  

20  

℃

/W  

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE40P20B  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

V

GS

=0V, I

D

=-250

μ

A  

V

DS

=-30V, V

GS

=0V  

V

GS

=20V  

-40  

V

μ

A  

nA  

V

-10  

100  

-3  

I

GSS  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

= V

GS

, I

D

=-250

μ

A  

V

GS

=-10V, I

D

=-5A  

V

DS

=-5V, I

D

=-12A  

-1.5  

34  

-1.9  

26  

Static Drain-Source On-Resistance  

Forward Transconductance  

32  

m

Ω  

S

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

2960  

370  

pF  

pF  

pF  

V

GS

=0V, V

DS

=-20V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

310  

SWITCHING PARAMETERS  

Q

g  

Total Gate Charge  

72  

14  

nC  

nC  

V

GS

=-10V, V

DS

=-20V,  

I

D

=-12A  

Q

gs  

Gate Source Charge  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

15  

10  

38  

18  

24  

nC  

ns  

ns  

ns  

ns  

V

GS

=-10V,  

V

DS

=-20V,  

R

t

d(f)  

Source-Drain Diode Characteristics  

V

SD  

I

S  

Drain-Source Diode Forward Voltage  

Continuous Source Current  

V

GS

=0V,I

S

=-1A  

-1.2  

-40  

V

A

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE40P20B  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE40P20B  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE40P20B  

Package Outline Dimension  

TO-252  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.