SINO-IC-SE60130G

SE60130G  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

For a single MOSFET  

Advanced trench technology to provide  

excellent RDS(ON), low gate charge and low  

operation voltage. This device is suitable for  

using as a load switch or in PWM applications.  

⚫

⚫

V

DS

= 60V  

R

DS(ON)

= 5.3

mΩ @ V

GS

=10V  

⚫

⚫

⚫

Simple Drive Requirement  

Small Package Outline  

Surface Mount Device  

Pin configurations  

See Diagram below  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

Rating  

60  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

GS  

±

20  

105  

Continuous  

Drain Current  

I

D  

A

Pulsed  

250  

125  

T

o

tal Power Dissipation  

Derating factor  

@

T

A=25

℃  

P

D  

W

W/

℃  

mJ  

0.45  

Single pulse avalanche energy  

E

AS  

T

J  

80  

Operating Junction

T

emperature Range  

-55 to 175  

℃

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

℃

/W  

R

θJC  

Thermal Resistance Junction to Case  

–

1.2  

1

SE60130G  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0V  

V

DS

=20

V

,

V

GS

=0V  

V

GS

=20V  

60  

V

μ

A  

nA  

V

1

I

GSS  

100  

4.0  

6.5  

8.5  

V

GS(th)  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=10V, I

D

=20A  

2.0  

–

3.0  

5.0  

R

DS(ON)  

g

FS  

Static Drain-Source On-Resistance  

Forward Transconductance  

m

Ω  

V

GS

=4.5

V

,

I

D

=20A  

V

DS

=5

V

,

I

D

=20A  

7.0  

48  

S

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

2274  

793  

35  

pF  

pF  

pF  

V

GS

=0V, V

DS

=30V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

T

o

tal Gate Charge

2  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

36  

4.5  

7.5  

11  

nC  

nC  

nC  

ns  

V

GS

=10V, V

DS

=30

V

,  

I

D

=20A  

V

GS

=10V, V

DS

=30

V

,  

R

GEN

=10

Ω  

t

d(off)  

t

d(r)  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

35  

7

ns  

ns  

ns  

t

d(f)  

10  

2.  

SE60130G  

3.  

Typical Characteristics  

4.  

SE60

130G  

Package Outline Dimension  

TO-263  

ShenZhen

Sino-IC Semiconductor Co., Ltd.  

7.