SINO-IC-SE80100GA

SE80100GA  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

Thigh Density Cell Design For Ultra Low

 

For a single MOSFET  

On-Resistance Fully Characterized Avalanche  

Voltage and Current Improved Shoot-Through  

FOM  





V

DS

= 80V  

R







Simple Drive Requirement  

Small Package Outline  

Surface Mount Device  

Pin configurations  

See Diagram below  

Absolute Maximum Ratings  

Parameter  

Symbol  

Rating  

80  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

V

V

±

20  

100  

Continuous  

Drain Current  

I

D  

A

Pulsed  

370  

125  

Total Power Dissipation  

@TA=25

℃  

P

D  

T

J  

W

Operating Junction

T

e

mperature Range  

-55 to 175  

℃

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE80100GA  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

= 64V, V

GS

=0V  

V

GS

=20V  

80  

V

μ

A  

nA  

V

1

I

GSS  

100  

2.5  

V

GS(th)  

R

DS(ON)  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=10V, I

D

=40A  

1.5  

–

2

Static Drain-Source On-Resistance  

6.0  

m

Ω  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

4120  

520  

pF  

pF  

pF  

V

GS

=0V, V

DS

=40V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

200  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

Total Gate Charge  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

58  

15  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=10V,  

I

D

=40A  

V

DS

=64V,  

19  

V

GS

=10V, V

DS

=40V,  

34  

R

103  

95  

I

D

=2A  

t

d(f)  

33  

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

1.2  

Units  

℃

/W  

R

θ

JC  

Thermal Resistance Junction to Case(t

≤

10s)  

–

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE80100GA  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE80100GA  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE80100GA  

Package Outline Dimension  

TO-220  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-

T

e

ch Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.