SINO-IC-SE9435

SHANGHAI  

August 2005  

MICROELECTRONICS CO., LTD.  

SE9435  

P-Channel Enhancement Mode Power MOSFET  

General Description  

Features  

The MOSFETs from SINO-IC provide the

 

z

V

DS

= -30 V  

best combination of fast switching, low

z

I

D

= -5.3 A  

on-resistance and cost-effectiveness.  

z

R

DS(ON)

= 0.050

Ω

@V

GS

= -10V  

z

Low gate charge.  

z

Fast switching speed.  

z

Extremely low R

DS(ON)  

Applications  

z

Power management in nomadic equipment  

z

DC-DC converters  

z

High power and current handling capability  

z

Battery powered systems  

z

Motor drive  

SOP-8  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

V

GS  

I

D  

Rating  

-30  

Units  

V

Drain-Source Voltage  

Gate-Source Voltage  

±20  

V

Continuous Drain Current

3

@T

A

=25°C  

Continuous Drain Current

3

@T

A

=70°C  

Pulsed Drain Current

1  

A

-5.3  

I

D  

A

-4.7  

I

DM  

A

-20  

Power Dissipation

 

@T

A

=25°C  

Linear Dearating Factor  

P

D  

W

2.5  

0.02  

W/°C  

°C  

°C  

Storage Temperature Range  

Operating Junction Temperature Range  

T

STG  

T

J  

-55 to 150  

-55 to 150  

Thermal Characteristics  

Parameter  

Symbol  

Max  

Units  

Thermal Resistance Junction-to-Ambient

3  

°C/W  

Rthj-amb  

50  

ShangHai Sino-IC Microelectronics Co., Ltd.  

1.  

SE9435  

Electrical Characteristics

 

(T

J

=25°C unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min Typ Max Units  

STATIC PARAMETERS  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

-30  

V

μ

A  

μ

A  

nA  

V

I

D

= -250

μ

A, V

GS

=0 V  

V

DS

= -30 V, V

GS

=0 V  

V

DS

= -24 V, V

GS

=0 V (T

J

=70°C)  

V

DS

= 0 V, V

GS

= ±20 V  

V

DS

= V

GS

I

D

= -250

μ

A  

V

GS

= -10 V, I

D

= -5.3 A  

V

GS

= -4.5 V, I

D

= -4.2A  

V

DS

= -10V, I

D

= -5.3 A  

I

S

= -2.6 A,V

GS

= 0 V  

-1  

-25  

±100  

-3  

Zero Gate Voltage Drain Current  

I

GSS  

Gate-Body leakage current  

Gate Threshold Voltage  

V

GS(th)  

-1  

50  

m

Ω  

m

Ω  

S

R

DS(ON)  

Static Drain-Source On-Resistance

2  

90  

g

FS  

V

SD  

I

S  

Forward Transconductance  

Diode Forward Voltage  

10  

-1.2  

V

Body-Diode Continuous Current  

V

D

=V

G

=0V,V

S

=-1.2 V  

-2.08  

A

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

790  

440  

120  

pF  

pF  

pF  

Output Capacitance  

V

GS

=0V, V

DS

= -15 V, f=1MHz  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Total Gate Charge

2  

Gate Source Charge  

Gate Drain Charge  

Turn-On DelayTime

2  

Turn-On Rise Time  

Turn-Off DelayTime  

Turn-Off Fall Time  

20  

3.5  

2

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

= -10V,

 

V

DS

= -15V,  

I

D

= -5.3A  

12  

20  

45  

47  

V

GS

= -10V, V

DS

= -15V, I

D

= -1A  

R

D

=15

Ω

, R

G

=6

Ω  

t

d(off)  

t

f  

Notes

：  

1. Pulse width limited by Max. junction temperature.  

2. Pluse width

≤

300us

，

duty cycle

≤

2%

．  

3. Surface mouned on 1 in

2

copper pad of FR4 board

；

125°C/W when mounted on Min. copper pad  

ShangHai Sino-IC Microelectronics Co., Ltd.  

2.  

SE9435  

Typical Characteristics  

Fig1. Typical output characteristics  

Fig2. Typical output characteristics  

Fig3. On-Resistance v.s. Gate Voltage  

Fig4. Normalized On-Resistance  

v.s. Junction Temperature  

ShangHai Sino-IC Microelectronics Co., Ltd.  

3.  

SE9435  

Fig5. Maximum Drain Current v.s.  

Fig6. Typical Power Dissipation  

Case Temperature  

Fig7. Maximum Safe Operating Area  

Fig8. Effective Transient Thermal  

Impedance  

ShangHai Sino-IC Microelectronics Co., Ltd.  

4.  

SE9435  

Fig9. Gate Charge Characteristics  

Fig10. Typical Capacitance  

Characteristics  

Fig11. Forward Characteristic of  

Reverse Diode  

Fig12. Gate Threshold Voltage v.s.  

Junction Temperature  

ShangHai Sino-IC Microelectronics Co., Ltd.  

5.  

SE9435  

Fig13. Switching Time Circuit  

Fig14. Switching Time Waveform  

Fig15. Gate Charge Circuit  

Fig16. Gate Charge Waveform  

ShangHai Sino-IC Microelectronics Co., Ltd.  

6.  

SE9435  

SOP-8 MECHANICAL DATA  

Millimeters  

DIM  

MIN  

TYP  

MAX  

1.75  

0.25  

1.75  

0.49  

0.25  

5.00  

6.20  

4.00  

A

A1  

A2  

B

0.10  

1.35  

0.35  

0.19  

4.80  

5.80  

3.80  

1.55  

0.42  

C

D

4.90  

6.00  

3.95  

1.27  

E

E1  

e

L

0.40  

0

o  

0.90  

8

o  

K

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Rm302, 55, LONG 200 SONGTAO Road, Shanghai 200120 China  

Phone: +86-21-50805408  

Fax: +86-21-50805408-8013  

Email: support@sino-ic.com  

50805407  

50275099  

50275077  

ShangHai Sino-IC Microelectronics Co., Ltd.  

7.