SINO-IC-SEBT9013

Jul 2015  

SEBT9012,9013,9014,9015,9016,9018  

PNP Plastic-Encapsulate Transistors (9012, 9015)  

NPN Plastic-Encapsulate Transistors (9013, 9014,9016, 9018)  

Feature  

Revision: A  



AM/FM Amplifier, local oscillator of FM/VHF  

tuner  



High current gain bandwidth product  

Applications  



Inverter, Interface, Driver  

9012 is complementary to 9013  

9014 is complementary to 9015  

Absolute Maximum Ratings (TA=25

℃

)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

9012  

-40  

9013  

40  

9014  

50  

9015  

-50  

9016  

30  

9018  

30  

Units  

V

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

Collector current  

-25  

25  

45  

-45  

20  

15  

V

-5  

5

5

-5  

4

5

V

-500  

300  

500  

300  

100  

200  

-100  

200  

25  

50  

mA  

mW  

℃

℃

Collector power dissipation  

Junction temperature  

Storage temperature  

Thermal Characteristics  

Thermal Resistance  

P

C  

200  

200  

T

J  

150  

T

stg  

-55 to +150  

R

θ

JA  

416  

625  

℃

/W  

Electrical Characteristics (TA=25

℃

)  

Parameter  

Symbol  

Conditions  

PN  

Min.  

Typ.  

Max.  

Unit  

IC=-100

μ

A, IE=0  

IC=100

μ

A, IE=0  

IC=-100

μ

A, IE=0  

IC=-100

μ

A, IE=0  

IC=100

μ

A, IE=0  

IC=100

μ

A, IE=0  

9012  

9013  

9014  

9015  

9016  

9018  

-40  

40  

50  

-50  

30  

30  

Collector-base breakdown voltage  

BV

CBO  

V

IC=-1mA, IB=0  

IC=1mA, IB=0  

IC=0.1mA, IB=0  

IC=-0.1mA, IB=0  

IC=0.1mA, IB=0  

IC=1mA, IB=0  

9012  

9013  

9014  

9015  

9016  

9018  

-25  

25  

45  

Collector-emitter breakdown voltage  

BV

CEO  

V

-45  

20  

15  

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

Parameter  

Symbol  

Conditions  

PN  

Min.  

Typ.  

Max.  

Unit  

IE=-100

μ

A, IC=0  

9012  

9013  

9014  

9015  

9016  

9018  

-5  

IE=100

μ

A, IC=0  

IE=100

μ

A, IC=0  

IE=-100

μ

A, IC=0  

IE=100

μ

A, IC=0  

IE=100

μ

A, IC=0  

5

5

Emitter-base breakdown voltage  

BV

EBO  

V

-5  

4

5

VCB=-40

V

,

I

E=0  

VCB=40

V

,

I

E=0  

VCB=50

V

,

I

E=0  

VCB=-50

V

,

I

E=0  

VCB=30

V

,

I

E=0  

VCB=12

V

,

I

E=0  

9012  

9013  

9014  

9015  

9016  

9018  

-0.1  

0.1  

0.1  

Collector cut-off current  

I

CBO  

μ

A  

μ

A  

μ

A  

V

-0.1  

0.1  

0.05  

VCE=-20

V

,

I

B=0  

VCE=20

V

,

I

B=0  

VCE=35

V

,

I

B=0  

VCE=-35

V

,

I

B=0  

VCE=30

V

,

I

B=0  

VCE=12

V

,

I

B=0  

9012  

9013  

9014  

9015  

9016  

9018  

-0.1  

0.1  

0.1  

-0.1  

0.1  

0.1  

Collector cutoff current  

I

CEO  

VEB=-5

V

,

I

C=0  

VEB=5

V

,

I

C=0  

VEB=3

V

,

I

C=0  

VEB=-3

V

,

I

C=0  

VEB=3

V

,

I

C=0  

VEB=3

V

,

I

C=0  

9012  

9013  

9014  

9015  

9016  

9018  

-0.1  

0.1  

0.1  

-0.1  

0.1  

0.1  

Emitter cut-off current  

I

EBO  

I

C

=-500mA, I

B

=-50mA  

I

C

=500mA, I

B

=50mA  

I

C

=100mA, I

B

=5mA  

I

C

=-100mA, I

B

=-50mA  

I

C

=10mA, I

B

=1mA  

9012  

9013  

9014  

9015  

9016  

9018  

-0.6  

0.6  

0.3  

-0.3  

0.3  

0.5  

Collector-emitter saturation voltage  

V

CE(sat)  

I

C

=10mA, I

B

=1mA  

I

C

=-500mA, I

B

=-50mA  

I

C

=500mA, I

B

=50mA  

I

C

=100mA, I

B

=5mA  

I

C

=-100mA, I

B

=-50mA  

I

C

=10mA, I

B

=1mA  

9012  

9013  

9014  

9015  

9016  

9018  

-1.2  

1.2  

1

Base-emitter saturation voltage  

V

BE(sat)  

V

-1  

1.2  

1.4  

I

C

=10mA, I

B

=1mA  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

Parameter  

Symbol  

Conditions  

PN  

Min.  

Typ.  

Max.  

Unit  

VCE=-1

V

,

I

C=-50mA  

9012  

9013  

9014  

9015  

9016  

9018  

120  

400  

VCE=1

V

,

I

C=50mA  

VCE=5

V

,

I

C=1mA  

VCE=-5

V

,

I

C=-1mA  

VCE=5

V

,

I

C=1mA  

VCE=5

V

,

I

C=1mA  

120  

200  

200  

28  

400  

1000  

1000  

198  

DC current transfer ratio  

hfe  

70  

190  

VCE=-6

V

,

I

C=-20mA,  

f=30MHz  

9012  

9013  

9014  

9015  

9016  

9018  

150  

150  

150  

150  

400  

800  

VCE=6

V

,

I

C=20mA,  

f=30MHz  

VCE=5

V

,

I

C=10mA,  

f=30MHz  

Transition frequency  

fT  

MHz  

VCE=-5

V

,

I

C=-10mA,  

f=30MHz  

VCE=5

V

,

I

C=1mA,  

f=400MHz  

VCE=5

V

,

I

C=5mA,  

f=400MHz  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SEBT90XX  

Typical Characteristics (SEBT9012)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SEBT90XX  

Typical Characteristics (SEBT9013)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

SEBT90XX  

Typical Characteristics (SEBT9014)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.  

SEBT90XX  

Typical Characteristics (SEBT9015)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

7.  

SEBT90XX  

Typical Characteristics (SEBT9016)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

8.  

SEBT90XX  

Typical Characteristics (SEBT9018)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

9.  

SEBT90XX  

Package Information  

SOT-23  

TO-92  

ShangHai Sino-IC Microelectronic Co., Ltd.  

10.  

SEBT90XX  

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Microelectronics Co., Ltd.  

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SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

ShangHai Sino-IC Microelectronic Co., Ltd.  

11.