SINO-IC-SED14N65G

SED14N65G  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

Thigh Density Cell Design For Ultra Low

 

For a single MOSFET  

On-Resistance Fully Characterized Avalanche  

Voltage and Current Improved Shoot-Through  

FOM  





V

DS

= 650V  

R







Simple Drive Requirement  

Small Package Outline  

Surface Mount Device  

Pin configurations  

See Diagram below  

D

6

D

7

D

5

D

8

1

2

3

4

S

S

S

G

DFN5*6  

Absolute Maximum Ratings  

Parameter  

Drain-Source Voltage  

Symbol  

Rating  

650  

Units  

V

DS  

V

GS  

V

V

Gate-Source Voltage  

±

30  

14  

Continuous  

Pulsed  

Drain Current  

I

D  

A

30  

226  

Single Pulse Avalanche Engergy  

E

AS  

P

D  

T

J  

mJ  

W

Total Power Dissipation  

@TA=25

℃  

156  

Operating Junction

T

e

mperature Range  

-55 to 150  

℃

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SED14N65G  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

= 650V, V

GS

=0V  

V

GS

=30V  

650  

V

μ

A  

nA  

V

1

I

GSS  

100  

4

V

GS(th)  

R

DS(ON)  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=10V, I

D

=1A  

2

2

Static Drain-Source On-Resistance  

300  

360  

m

Ω  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

1224  

65  

pF  

pF  

pF  

V

GS

=0V, V

DS

=100

V

,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

4

SWITCHING PARAMETERS  

2

Q

g  

Q

gs  

Q

gd  

t

d(on)  

Total Gate Charge  

35  

9

70  

nC  

nC  

nC  

ns  

V

GS

=10V, V

DS

=520V,  

I

D

=6A  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

16  

16  

V

GS

=10V, V

DS

=520V,  

32  

70  

38  

36  

R

t

d(off)  

t

d(r)  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

35  

19  

18  

ns  

ns  

ns  

I

D

=6A  

t

d(f)  

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

R

θ

JC  

R

θ

JA  

Junction to Case  

Junction to Ambient (

t≦

10s)  

–

–

0.8  

62  

℃

/W  

℃

/W  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SED14N65G  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SED14N65G  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SED14N65G  

Package Outline Dimension  

DFN5 × 6  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.