SINO-IC-SED3030M

SED3030M  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

This type used advanced trench technology and

 

For a single MOSFET  

design to provide excellent RDS(ON) with low gate  

charge. It can be used in a wide variety of application  





V

DS

= 30V  

R

Pin configurations  

See Diagram below  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

Rating  

30  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

GS  

±

20  

30  

Continuous  

Drain Current  

Pulsed  

I

D  

A

80  

40  

Total Power Dissipation  

@TA=25

℃  

P

D  

E

AS  

T

J  

W

mJ  

℃

Single pulse avalanche energy  

72  

Operating Junction

T

e

mperature Range  

-55 to 175  

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

℃

/W  

R

θ

JC  

Thermal Resistance Junction to Case  

–

3

ShangHai Sino-IC Microelectronics Co., Ltd.  

1.  

SED3030M  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

=30V, VGS=0V  

V

GS

=20V  

30  

V

μ

A  

nA  

V

1

I

GSS  

100  

1.7  

8.5  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

= V

GS

, I

D

=250

μ

A  

1

–

V

GS

=10V, I

D

=25A  

7.4  

Static Drain-Source On-Resistance  

Forward Transconductance  

m

Ω  

S

V

DS

=60V, I

D

=7.5A  

26  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

680  

102  

71  

pF  

pF  

pF  

V

GS

=0V, V

DS

=15V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

Q

g  

Total Gate Charge

2  

Gate Source Charge  

17.5  

43  

nC  

nC  

V

GS

=10V,  

I

D

=20A  

V

DS

=15V,  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

4.1  

5

nC  

ns  

ns  

ns  

ns  

V

GS

=10V, V

DS

=15V,  

R

GEN

=3

Ω  

19  

12  

6

I

D

=20A  

t

d(f)  

Source-Drain Diode Characteristics  

V

SD  

I

S  

Diode Forward Voltage  

Diode Forward Current  

Reverse Recovery Time  

V

GS

=0V,I

S

=24A  

1.2  

30  

V

A

t

rr  

TJ=25

℃

,IF=20A  

19  

10  

nS  

Di/dt=100A/

μ

s  

Qrr  

t

on  

Reverse Recovery Charge  

Forward Turn-On Time  

nC  

Intrinsic turn-on time is negligible(turn-on is dominated by LS  

ShangHai Sino-IC Microelectronics Co., Ltd.  

2.  

SED3030M  

Typical Characteristics  

ShangHai Sino-IC Microelectronics Co., Ltd.  

3.  

SED3030M  

Typical Characteristics  

ShangHai Sino-IC Microelectronics Co., Ltd.  

4.  

SE3D080M  

Package Outline Dimension  

DFN3X3 EP  

ShangHai Sino-IC Microelectronics Co., Ltd.  

5.  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-

T

e

ch Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronics Co., Ltd.  

6.