SINO-IC-SED4060G

SED4060G  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

This type used advanced trench technology

 

For a single MOSFET  

and design to provide excellent RDS(ON) with  

low gate charge. It can be used in a wide  

variety of application  





V

DS

= 40V  

R

Pin configurations  

See Diagram below  

D

6

D

7

D

5

D

8

1

2

3

4

S

S

S

G

DFN5*6  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

Rating  

40  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

GS  

±

20  

60  

Continuous  

Drain Current  

I

D  

A

Pulsed  

200  

65  

Total Power Dissipation  

@TA=25

℃  

P

D  

T

J  

W

Operating Junction

T

e

mperature Range  

-55 to 175  

℃

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

℃

/W  

R

θ

JC  

Thermal Resistance Junction to Case  

–

5

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SED4060G  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

=40V, V

GS

=0V  

V

GS

=20V  

40  

V

μ

A  

nA  

V

1

I

GSS  

300  

2.2  

9.5  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=10V, I

D

=20A  

V

DS

=5V, I

D

=20A  

1.0  

–

1.6  

7.5  

25  

Static Drain-Source On-Resistance  

Forward Transconductance  

m

Ω  

S

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

942  

309  

29  

pF  

pF  

pF  

V

Output Capacitance  

f=1MHz  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

Total Gate Charge  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

14.5  

2

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=10V,  

I

D

=10A  

V

DS

=20V,  

2.5  

6

V

GS

=10V, V

DS

=20V,  

R

21  

5

t

d(f)  

5

Source-Drain Ratings and Characteristics  

V

SD  

trr  

Diode Forward Voltage  

V

GS

=0V,I

S

=20A  

TJ=25

℃

, IF=10A  

Di/dt=100A/

μ

s  

1.2  

V

Reverse Recovery Time  

24  

19  

ns  

Qrr  

Reverse Recovery Charge  

nC  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SED4060G  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SED4060G  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SED4060G  

Package Outline Dimension  

DFN5X6  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

SED4060G  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-

T

e

ch Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.