Sinopower-Semicon-APM2701ACC-TRG
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APM2701AC
®
Dual Enhancement Mode MOSFET (N- and P-Channel)
Pin Description
Features
·
N-Channel
20V/3A,
D2
S1
D1
R
DS(ON)
=50m
W
(typ.) @ V
GS
=4.5V
R
DS(ON)
=65m
W
(typ.) @ V
GS
=2.5V
G2
S2
G1
·
P-Channel
-20V/-2A,
T
o
p View of SOT-23-6
R
DS(ON)
=90m
W
(typ.) @ V
GS
=-4.5V
R
DS(ON)
=130m
W
(typ.) @ V
GS
=-2.5V
(4)D2
(6)D1
·
·
Reliable and Rugged
Lead Free and Gree
n
D
evices Available
(RoH
S
C
ompliant)
(3)
G2
(1)
G1
Applications
(5)S1
(2)S2
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
N-Channe
l
M
OSFET P-Channe
l
M
OSFET
Ordering and Marking Information
APM2701A
Package Code
C : SOT-23-6
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55
to 150
o
C
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
XX – Lot Code
APM2701A C
:
A71XX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
1
APM2701AC
®
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
R
a
t
ing
Symbol
Parameter
U
n
it
N-Channel P-Channel
V
DSS
V
GSS
I
D
*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
20
±
12
3
-20
±
12
-2
V
V
GS
=
±
4.5V
A
A
I
DM
I
S
*
T
J
*
12
1
-8
300
m
s P
u
lsed Drain Current
Diode Continuous Forward Current
Maximum Junction
T
e
m
perature
Storage
T
e
mperature Range
-1
150
°
C
T
STG
-55 to 150
0.83
T
A
=25
°
C
P
D
*
Power Dissipation
W
T
A
=100
°
C
0.3
Thermal Resistance-Junction to Ambient
150
°
C
/
W
R
q
JA
*
Note : *Surface Mounted on 1in
2
pad area, t
£
10sec.
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Static Characteristics
Drain-Source Breakdown
Parameter
Test Conditions
Min.
Typ. Max. Unit
N-Ch
P
–
Ch
20
–
–
–
–
V
GS
=0V, I
D
S
=250
m
A
BV
DSS
V
Voltage
-20
V
GS
=0V, I
D
S
=-250
m
A
V
DS
=16V, V
GS
=0V
–
–
1
N-Ch
P
–
Ch
T
J
=
8
5
°
C
V
DS
=-16V, V
GS
=0V
T
J
=
8
5
°
C
–
–
30
-1
Zero Gate Voltage Drain
Current
I
DSS
m
A
–
–
–
–
-30
1
N-Ch
P
–
Ch
N-Ch
P
–
Ch
N-Ch
P
–
Ch
N-Ch
P
–
Ch
0.5
0.7
-0.7
–
V
DS
=V
GS
, I
DS
=250
m
A
V
DS
=V
GS
, I
DS
=-250
m
A
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
V
-0.5
-1
–
–
–
–
–
–
±
10
±
10
65
120
90
180
V
GS
=
±
10V, V
D
S
=0V
m
A
–
V
GS
=4.5V, I
DS
=3A
V
GS
=-4.5V, I
DS
=-2A
V
GS
=2.5V, I
DS
=1.7A
V
GS
=-2.5V, I
DS
=-1A
50
90
65
130
Drain-Source On-State
Resistance
a
R
DS(ON)
m
W
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
2
APM2701AC
®
Electrical Characteristics (Cont.)
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Diode Characteristics
I
SD
=0.5A, V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
0
.
7
-0.7
11
1
.
3
a
V
SD
Diode Forward Voltage
V
I
SD
=-0.5A, V
GS
=0V
-1.3
N-Channel
I
SD
=3A,
dI
SD
/dt=100A/
m
s
P-Channel
I
SD
=-2A,
dI
SD
/dt=100A/
m
s
–
–
t
rr
R
e
verse Recovery Time
ns
12
N-Ch
P-Ch
–
–
4
4
–
–
R
e
verse Recovery Charge
nC
pF
Q
rr
Dynamic Characteristics
b
N-Channel
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
375
70
70
50
50
4
–
–
C
i
s
s
C
oss
C
rss
t
d(ON)
T
r
I
n
put Capacitance
O
u
t
put Capacitance
–
–
P-Channel
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
–
R
e
verse Transfer
C
a
pacitance
–
8
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
N-Channel
6
12
26
26
39
50
10
10
V
DD
=10V, R
L
=10
W
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=
6
W
14
14
21
27
5
ns
P-Channel
t
d(OFF)
V
DD
=-10V, R
L
=10
W
,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=
6
W
T
f
5
Gate Charge Characteristics
b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
4
.
1
4
.
2
0
.
4
0
.
6
1
.
7
1
.
3
6
6
–
Q
g
Q
gs
Q
gd
Total Gate Charge
G
a
t
e-Source Charge
G
a
t
e-Drain Charge
N-Channel
V
DS
=10V, V
GS
=4.5V,
I
DS
=3A
nC
–
P-Channel
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-2A
–
–
Not
e
a :
P
ulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
Not
e
b :
G
uaranteed by design, not subject to production testing.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
3
APM2701AC
®
Typical Operating Characteristics
N-Channel
Power Dissipation
Drain Current
1.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
emperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
2
1
50
10
Duty =
0.5
0.2
0.1
300
m
s
1
0.1
1ms
0.05
0.1
10ms
0.02
0.01
100ms
1s
DC
Mounted on 1in
2
pad
Single Pulse
q
JA
: 150
o
C/W
T
A
=25
o
C
R
0.01
0.01
1E-4 1E-3 0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
4
APM2701AC
®
Typical Operating Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
90
84
78
72
66
60
54
48
42
36
30
12
11
10
9
V
GS
= 3,4,5,6,7,8,9,10V
2V
V
GS
=2.5V
V
GS
=4.5V
8
7
6
5
4
1.5V
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
12
V
DS
– Drain – Source Voltage (V)
I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
100
90
80
70
60
50
40
30
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
DS
=3A
I
DS
=250
m
A
-50 -25
0
25 50 75
100 125 150
1
2
3
4
5
6
7
8
9
10
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
5
APM2701AC
®
Typical Operating Characteristics (Cont.)
N-Channel
Source-Drain Diode Forward
Drain-Source On Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
20
10
V
GS
= 4.5V
I
DS
= 3A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 50m
W
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
j
– Junction
T
e
mperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
500
450
400
350
300
250
200
150
100
50
5.0
Frequency=1MHz
V
DS
= 10V
I
DS
= 3A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ciss
Coss
Crss
0
0
4
8
12
16
20
0
1
2
3
4
5
V
DS
– Drain – Source Voltage (V)
Q
G
– Gate Charge (nC)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
6
APM2701AC
®
Typical Operating Characteristics (Cont.)
P-Channel
Power Dissipation
Drain Current
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
emperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
30
10
2
1
Duty =
0.5
0.2
300
m
s
1
0.1
0.05
1ms
0.1
10ms
0.02
100ms
0.1
1s
0.01
DC
Mounted on 1in
2
pad
Single Pulse
T
A
=25
o
C
R
q
JA
: 150
o
C/W
0.01
0.01
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1
10
100
-V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
7
APM2701AC
®
Typical Operating Characteristics (Cont.)
P-Channel
Output Characteristics
Drain-Source On Resistance
8
7
6
5
4
3
2
1
0
200
180
160
140
120
100
80
V
GS
=-2.5,-3-4,-5,-6,
-7,-8,-9,-10V
-2V
V
GS
= -2.5V
V
GS
= -4.5V
-1.5V
60
40
0
1
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-V
DS
– Drain – Source Voltage (V)
-I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
240
210
180
150
120
90
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
DS
= -250
m
A
I
DS
=-2A
60
30
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
8
APM2701AC
®
Typical Operating Characteristics (Cont.)
P-Channel
Source-Drain Diode Forward
Drain-Source On Resistance
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= -4.5V
I
DS
= -2A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 90m
W
0.1
0.0
-50 -25
0
25 50 75
100 125 150
0.3
0.6
0.9
1.2
1.5
T
j
– Junction
T
e
mperature (
°
C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
550
500
450
400
350
300
250
200
150
100
50
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Frequency=1MHz
V
DS
= -10V
I
DS
= -2A
Ciss
Coss
Crss
0
0
4
8
12
16
20
0
1
2
3
4
5
-V
DS
– Drain – Source Voltage (V)
Q
G
– Gate Charge (nC)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
9
APM2701AC
®
Avalanche Test Circuit and Waveforms
N Channel
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
W
t
AV
t
AV
P Channel
V
DS
L
DUT
E
AS
V
DD
R
G
V
DD
I
AS
tp
I
L
V
DS
0.01
W
t
p
V
DSX(SUS)
Switching Time Test Circuit and Waveforms
N Channel
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
P Channel
V
DS
R
D
t
d
(off)
t
f
t
d
(on)
t
r
DUT
V
GS
10%
V
GS
R
G
V
DD
tp
90%
V
DS
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
10
APM2701AC
®
Package Information
SOT-23-6
D
e
SEE
VIEW A
b
c
e1
GAUGE PLANE
SEATING PLANE
L
VIEW A
SOT-23-6
RECOMMENDED LAND PATTERN
S
Y
M
B
O
L
MILLIMETERS
INCHES
0.63
MIN.
–
MAX.
MIN.
–
MAX.
0.049
0.002
0.047
0.020
0.009
A
1.25
0.05
1.20
0.50
0.22
0.000
0.035
0.012
0.003
A1
A2
b
0.00
0.90
0.30
0.08
c
2.4
D
3.10
3.00
1.80
0.106
0.102
0.055
0.122
0.118
0.071
2.70
2.60
1.40
E
E1
e
0.8
0.95 BSC
1.90 BSC
0.037 BSC
0.075 BSC
e1
L
0.012
0.024
0.30
0.60
0.95
8
0
°
8
0
°
0
UNIT: mm
Note : 1. Follow JEDEC TO-178 AB.
2. Dimension D and E1 do not include mold flash, protrusions or
gate burrs. Mold flash, protrusion or gate burrs shall not exceed
10 mil per side.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
11
APM2701AC
®
Carrier Tape & Reel Dimensions
P0
P2
P1
A
OD0
K0
A0
A
OD1
B
B
SECTION A-A
SECTION B-B
d
T1
Application
SOT-23-6
A
H
T1
C
d
D
W
E1
F
8.4+2.00 13.0+0.50
178.0
±
2.00 50
MIN.
P0 P1
1.5 MIN.
20.2 MIN.
8.0
±
0.30 1.75
±
0.10 3.5
±
0.05
-0.00
-0.20
P2
D0
D1
T
A0
B0
K0
1.5+0.10
-0.00
0.6+
0
.
00
-0.40
4.0
±
0.10 4.0
±
0.10 2.0
±
0.05
1.0 MIN.
3.20
±
0.20 3.10
±
0.20 1.50
±
0.20
(mm)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
12
APM2701AC
®
Taping Direction Information
SOT-23-6
USER DIRECTION OF FEED
AAAXX
AAAXX
AAAXX
AAAXX
AAAXX
AAAXX
AAAXX
Classification Profile
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
13
APM2701AC
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter
“
Sinopower
”
) has been making
great efforts to development high quality and better performance products to
satisfy all customers
’
needs. However, a product may fail to meet customer
’
s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower
’
s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
14
APM2701AC
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (T
smin
)
Temperature max (T
smax
Time (T
smin
to T
smax
) (t
s
)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(T
smax
to T
P
)
3 C/second
max.
°
3 C/second max.
°
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t
)** within 5 C of the specified
°
P
20** seconds
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
Time 25 C to peak temperature
)
6 C/second
max.
6 C/second
max.
°
°
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process
–
Classification Temperatures (Tc)
Volume mm
3
350
Package
Thickness
Volume mm
3
<350
<2.5 mm
235 C
220 C
°
°
2.5 mm
220 C
220 C
³
°
°
T
a
ble 2. Pb-free Process
–
Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
°
C
Volume mm
3
>2000
<350
260
°
C
260
°
C
1.6 mm
–
2.5 mm
³
2.5 mm
260
°
C
250
°
C
250
°
C
245
°
C
245
°
C
245
°
C
Reliability Test Program
T
e
st item
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
SOLDERABILITY
HTRB
5 Se
c
, 245
°
C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
HTGB
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5
F
,
N
o. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5642050
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.5 – October, 2014
15
