Sinopower-Semicon-SM2001CSKC-TRG
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SM2001CSK
®
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
Pin Description
D1
D1
D2
•
•
•
N-Channel
20V/9.5A,
D2
R
DS(ON)
=14m
Ω
(max.) @ V
GS
= 4.5V
R
DS(ON)
=18m
Ω
(max.) @ V
GS
= 2.5V
P-Channel
-20V/-6A,
R
DS(ON)
=45m
Ω
(max.) @ V
GS
=-4.5V
S1
G1
S2
G2
T
o
p View of SOP
−
8
R
DS(ON)
=65m
Ω
(max.) @ V
GS
=-2.5V
(8) (7)
D1 D1
(6) (5)
D2 D2
100% UIS + R
g
T
e
sted
•
•
Reliable and Rugged
Lead Free and Gree
n
D
evices Available
(RoHS Compliant)
(4)
G2
(2)
G1
Applications
S1
(1)
S2
(3)
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
P-Channe
l
M
OSFET
N-Channe
l
M
OSFET
Ordering and Marking Information
Package Code
K : SOP-8
SM2001CS
Operating Junction Temperature Range
Assembly Material
Handling Code
C : -55
to 150
o
C
Handling Code
Temperature Range
TR : Tape & Reel
Assembly Material
Package Code
G : Halogen and Lead Free Device
2001
XXXXX
SM2001CS K
:
XXXXX – Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Channel 1
Channel 2
Unit
Common Ratings
(T
A
=25
°
C Unless Otherwise Noted)
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
20
-20
V
±
12
±
12
150
-55 to 150
T
J
T
STG
I
S
Maximum Junction
T
e
m
p
erature
Storage
T
e
m
perature Range
Diode Continuous Forward Current
Continuous Drain Current
°
C
T
A
=
2
5
°
C
T
A
=
2
5
°
C
T
A
=
2
5
°
C
T
A
=
2
5
°
C
T
A
=
7
0
°
C
t
≤
10s
1
.
8
9
.
5
30
2
-1.2
-6
I
D
A
W
a
I
DM
Pulsed Drain Current
-20
2
P
D
Power Dissipation
1
.
3
45
1.3
45
Thermal Resistance-Junction to Ambient
R
θ
JA
R
θ
JL
S
t
eady
S
t
ate
S
t
eady
S
t
ate
62.5
20
62.5
20
°
C/W
Thermal Resistance-Junction to Lead
b
I
AS
Avalanche Current, Single pulse (L=0.1mH)
Avalanche Energ
y
,
S
ingle pulse (L=0.1mH)
16
-15
11
A
b
E
AS
12
mJ
Note a
：
Pulse width limited by max. junction temperature.
Note b
：
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature Tj=25
o
C).
2
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Channel 1
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
20
–
–
–
1
V
V
GS
=0V, I
DS
=250
µ
A
V
DS
=16V, V
GS
=0V
–
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=85
°
C
–
–
30
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
0.5
0.7
–
1.0
±
100
14
V
V
DS
=V
G
S
, I
DS
=250
µ
A
V
GS
=
±
12V, V
DS
=0V
V
GS
=4.5V, I
DS
=9A
V
GS
=2.5V, I
DS
=6A
–
–
–
nA
12
13.5
R
DS(ON)
Drain-Source On-state Resistance
m
Ω
18
Diode Characteristics
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=1.5A, V
GS
=0V
–
–
–
0.67
11.8
3.6
1.1
V
–
–
ns
nC
I
DS
=6A, dl
SD
/dt=100A/
µ
s
Q
rr
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
0.7
795
160
118
10.2
16.1
16.6
3.6
–
–
Ω
Input Capacitance
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
pF
–
19
30
31
7
V
DD
=10V, R
L
=10
Ω
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=1
Ω
ns
t
d(OFF)
Turn-off Delay Time
Turn-off Fall Time
Gate Charge Characteristics
t
f
Q
g
Q
gs
Q
gd
Q
gth
Total Gate Charge
–
–
–
–
8.7
1.25
3
–
–
–
–
Gate-Source Charge
Gate-Drain Charge
Threshold Gate Charge
V
DS
=10V, V
GS
=4.5V,
I
DS
=6A
nC
0.54
3
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
Electrical Characteristics (Cont.)
(T
A
= 25
°
C unless otherwise noted)
Channel 2
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
D
S
S
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=-250
μ
A
-20
–
–
–
-1
V
V
DS
=-16V, V
GS
=0V
–
µ
A
uA
V
I
DSS
Zero Gate Voltage Drain Current
T
J
=85
°
C
V
DS
=V
GS
, I
DS
=-250
µ
A
–
–
-30
-1
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
-0.5
-0.7
–
V
GS
=
±
12V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-6A
V
GS
=-2.5V, I
DS
=-4A
–
–
–
±
100
45
nA
36
50
R
DS(ON)
Drain-Source On-state Resistance
m
Ω
65
Diode Characteristics
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
D
=-1.2A, V
GS
=0V
–
–
–
-0.7
12
-1
–
V
ns
nC
I
sd
=-6A, dl
SD
/dt=100A/
µ
s
Q
rr
4.5
–
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
3.5
590
122
92
–
–
Ω
Input Capacitance
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
pF
–
8.4
16
26
30
20
V
DD
=-10V, R
L
=10
Ω
,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=1
Ω
14.1
16
ns
t
d
(
OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
10.7
Q
g
Q
gs
Q
gd
Q
gth
Total Gate Charge
–
–
–
–
7.68
0.66
2.72
0.3
–
–
–
–
Gate-Source Charge
Gate-Drain Charge
Threshold Gate Charge
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-6A
nC
4
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
N Channel Typical Operating Characteristics
Power Dissipation
Drain Current
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
8
6
4
2
T
A
=25
o
C
T
A
=25
o
C,V
G
=4.5V
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
J
– Junction
T
emperature (
°
C)
T
J
– Junction
T
e
m
perature (
°
C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
0.2
0.1
0.05
300
µ
s
1ms
1
10ms
0.02
0.1
100ms
0.01
1s
0.1
DC
Mounted on 1in
2
pad
Single Pulse
T
A
=25
o
C
R
θ
JA
: 45
o
C/W
0.01
0.01
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1
10 60
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
5
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
N Channel Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
20
18
16
14
12
10
8
30
25
20
15
10
5
V
GS
=2,3,4,5,6,7,8,9,10V
V
GS
=2.5V
V
GS
=4.5V
1.5V
6
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=9A
I
DS
=250
µ
A
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
J
– Junction
T
e
mperature (
°
C)
6
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
N Channel Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
30
10
V
GS
= 4.5V
I
DS
= 9A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 12m
Ω
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
J
– Junction
T
e
mperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1200
1050
900
750
600
450
300
150
0
10
Frequency=1MHz
V
DS
=10V
I
DS
=6A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
4
8
12
16
20
0
4
8
12
16
20
Q
G
– Gate Charge (nC)
V
DS
– Drain – Source Voltage (V)
7
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
N Channel Typical Operating Characteristics (Cont.)
Transfer Characteristics
20
T
J
=-55
o
C
T
J
=25
o
C
T
J
=125
o
C
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
– Gate-Source Voltage (V)
8
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
P Channel Typical Operating Characteristics
Power Dissipation
Drain Current
2.4
2.0
1.6
1.2
0.8
0.4
0.0
7
6
5
4
3
2
1
0
T
A
=25
o
C
T
A
=25
o
C,V
G
=-4.5V
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
J
– Junction
T
emperature (
°
C)
T
J
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty =
0.5
0.2
0.1
300
µ
s
0.05
1ms
1
0.02
0.01
10ms
0.1
100ms
1s
0.1
0.01
DC
Single Pulse
Mounted on 1in
2
pad
T
A
=25
o
C
R
θ
JA
: 45
o
C/W
0.01
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1
10 60
-V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
9
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
P Channel Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
90
80
70
60
50
40
30
20
10
20
18
16
14
12
10
8
V
GS
=-2.5,-3,-4,-5,-6,
-7,-8,-9,-10V
V
GS
=-2.5V
V
GS
=-4.5V
-2V
6
4
-1.5V
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
-V
DS
– Drain – Source Voltage (V)
-I
D
– Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
140
120
100
80
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=-6A
I
DS
= -250
µ
A
60
40
20
0
-50 -25
0
25 50 75
100 125 150
1
2
3
4
5
6
7
8
9
10
-V
GS
– Gate – Source Voltage (V)
T
J
– Junction
T
e
mperature (
°
C)
10
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
P Channel Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
10
V
GS
= -4.5V
I
DS
= -6A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 36m
Ω
0.1
0.0
-50 -25
0
25 50 75
100 125 150
0.3
0.6
0.9
1.2
1.5
T
J
– Junction
T
e
m
perature (
°
C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1000
900
800
700
600
500
400
300
200
100
0
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
=-10V
I
DS
=-6A
Ciss
Coss
Crss
0
4
8
12
16
20
0
4
8
12
16
Q
G
– Gate Charge (nC)
-V
DS
– Drain – Source Voltage (V)
11
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
P Channel Typical Operating Characteristics (Cont.)
Transfer Characteristics
10
T
j
=-55
o
C
8
T
j
=25
o
C
6
T
j
=125
o
C
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
-V
GS
– Gate-Source Voltage (V)
12
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
Avalanche Test Circuit and Waveforms
N Channel
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
Ω
t
AV
t
AV
P Channel
V
DS
L
DUT
E
AS
V
DD
R
G
V
DD
I
AS
tp
I
L
V
DS
0.01
Ω
t
p
V
DSX(SUS)
Switching Time Test Circuit and Waveforms
N Channel
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
P Channel
V
DS
R
D
t
d
(off)
t
f
t
d
(on)
t
r
DUT
V
GS
10%
V
GS
R
G
V
DD
tp
90%
V
DS
13
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter
“
Sinopower
”
) has been making
great efforts to development high quality and better performance products to
satisfy all customers
’
needs. However, a product may fail to meet customer
’
s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower
’
s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
14
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
Classification Profile
15
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
®
SM2001CSK
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (T
smin
)
Temperature max (T
smax
Time (T
smin
to T
smax
) (t
s
)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(T
smax
to T
P
)
3 C/second
max.
°
3 C/second max.
°
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6 C/second
max.
°
6 C/second
max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process
–
Classification Temperatures (Tc)
Volume mm
3
350
Package
Volume mm
3
<350
Thickness
≥
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process
–
Classification Temperatures (Tc)
Package
Volume mm
3
Volume mm
3
Volume mm
3
T
h
ickness
<1.6 mm
<350
350-2000
260
°
C
250
°
C
245
°
C
>2000
260
°
C
245
°
C
245
°
C
260
°
C
260
°
C
250
°
C
1.6 mm
–
2.5 mm
≥
2.5 mm
Reliability Test Program
T
e
st item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245
°
C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5
F
,
N
o. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5635080
16
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2018
