Sinopower-Semicon-SM4024NSKPC-TRG
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SM4024NSKP
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
D
•
40V/60A,
D
D
D
R
DS(ON)
= 4.6m
Ω
(max.) @ V
GS
=10V
R
DS(ON)
= 5.9m
Ω
(max.) @ V
GS
=4.5V
G
S
Pin 1
•
100% UIS + R
g
T
e
sted
S
S
•
Reliable and Rugged
DFN5x6A-8_EP
•
Lead Free an
d
G
reen Device
s
A
vailable
(5,6,7,8)
DD D
D
(RoH
S
C
ompliant)
Applications
(4)
G
•
•
•
SMPS Synchronous Rectification
Load Switch
S S S
( 1, 2, 3 )
DC-DC Conversion
N-Channe
l
M
OSFET
Ordering and Marking Information
Package Code
KP : DFN5x6A-8_EP
SM4024NS
Operating Junction Temperature Range
Assembly Material
Handling Code
C : -55
to 150
o
C
Handling Code
Temperature Range
TR : Tape & Reel
Assembly Material
Package Code
G : Halogen and Lead Free Device
SM4024
XXXXX
SM4024NS KP
:
XXXXX – Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Absolute Maximum Ratings
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
V
DSS
V
GSS
T
J
Drain-Source Voltage
Gate-Source Voltage
40
±
20
150
-55 to 150
20
V
Maximum Junction Temperature
Storage Temperature Range
°
C
°
C
A
T
STG
I
S
Diode Continuous Forward Current
T
C
=25
°
C
T
C
=100
°
C
T
C
=25
°
C
T
C
=100
°
C
T
C
=25
°
C
T
C
=100
°
C
Steady State
T
A
=25
°
C
120
80
I
DP
Pulse Drain Current Tested
Continuous Drain Current
A
A
60*
38
a
I
D
50
P
D
R
θ
JC
I
D
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
W
°
C/W
A
20
2.5
18
T
A
=70
°
C
14
17
t
≤
10s
Thermal Resistance-Junction to Ambient
°
C/W
R
θ
JA
Steady State
L=0.5mH
L=0.5mH
50
b
I
AS
Avalanche Current, Single pulse
Avalanche Energ
y
,
S
ingle pulse
30
A
b
E
AS
225
mJ
Note a,*
：
Current limited by bond wire.
Note b
：
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
2
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
40
–
–
–
1
V
V
GS
=0V, I
D
S
=250
µ
A
V
DS
=32V, V
GS
=0V
–
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=85
°
C
–
–
30
2.5
±
100
4.6
–
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
1.5
1.9
–
V
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=
±
20V, V
DS
=0V
V
GS
=10V, I
DS
=30A
–
–
–
–
–
nA
3.9
5.72
4.75
60
c
R
DS(ON)
Drain-Source On-state Resistance
T
J
=125
°
C
m
Ω
S
V
GS
=4.5V, I
DS
=15A
V
DS
=5V, I
DS
=15A
5.9
–
Gfs
Forward Transconductance
Diode Characteristics
c
V
SD
t
rr
Diode Forward Voltage
I
SD
=20A, V
G
S
=0V
–
–
–
–
–
0.75
19.8
11
1.1
V
Reverse Recovery Time
Charge Time
–
–
–
–
t
a
ns
nC
Ω
I
DS
=30A, dl
SD
/dt=100A/
µ
s
t
b
Discharge Time
8.8
6
Q
rr
Reverse Recovery Charge
Dynamic Characteristics
d
R
G
C
i
s
s
C
o
s
s
C
rss
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
1
1.5
2
Input Capacitance
1944 2430 2916
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
252
360
165
17
9
468
231
32
pF
79
–
t
d(ON)
Turn-on Delay Time
t
r
Turn-on Rise Time
t
d
(
OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
d
V
DD
=15V, R
L
=15
Ω
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
Ω
–
17
ns
–
52
17
95
–
32
V
DS
=15V, V
GS
=4.5V,
I
DS
=30A
Q
g
Total Gate Charge
–
19.4
27
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
–
–
–
–
42
4.4
8.5
6.2
59
6.2
12
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
DS
=30A
8.7
Note c
：
Pulse test ; pulse width
≤
300
µ
s, duty cycle
≤
2%.
Note d
：
Guaranteed by design, not subject to production testing.
3
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Typical Operating Characteristics
Power Dissipation
Drain Current
60
70
60
50
40
30
20
10
0
50
40
30
20
10
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
e
mperature
Safe Operation Area
Thermal Transient Impedance
600
100
2
1
Duty = 0.5
0.2
1ms
0.1
0.05
10ms
0.1
0.01
1E-3
0.02
0.01
10
1
100ms
1s
DC
Single Pulse
Mounted on 1in
2
pad
T
C
=25
O
C
R
θ
JA
:17
o
C/W
0.1
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10
100
V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
4
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
120
100
80
60
40
20
0
7
6
5
4
3
2
V
GS
= 4,5,6,7,8,9,10V
3.5V
V
GS
=4.5V
V
GS
=10V
3V
2.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
120
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=30A
I
DS
=250
µ
A
6
4
2
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
5
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
= 10V
I
DS
= 30A
100
10
1
T
j
=150
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 3.9m
Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
3500
3000
2500
2000
1500
1000
500
Frequency=1MHz
V
DS
= 15V
I
DS
= 30A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
5
10
15
20
25
30
0
7
14
21
28
35
42
V
DS
–
D
rain-Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
Ω
t
AV
Switching Time Test Circuit and Waveforms
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
7
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter
“
Sinopower
”
) has been making
great efforts to development high quality and better performance products to
satisfy all customers
’
needs. However, a product may fail to meet customer
’
s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower
’
s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
8
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Classification Profile
9
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
SM4024NSKP
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (T
smin
)
Temperature max (T
smax
Time (T
smin
to T
smax
) (t
s
)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(T
smax
to T
P
)
3 C/second
max.
°
3 C/second max.
°
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6 C/second
max.
°
6 C/second
max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process
–
Classification Temperatures (Tc)
Volume mm
3
Package
Volume mm
3
Thickness
<350
≥
350
<2.5 mm
235
°
C
220
°
C
220
°
C
220
°
C
≥
2.5 mm
T
a
ble 2. Pb-free Process
–
Classification Temperatures (Tc)
Package
Volume mm
3
Volume mm
3
Volume mm
3
Thickness
<1.6 mm
<350
350-2000
260
°
C
>2000
260
°
C
245
°
C
245
°
C
260
°
C
260
°
C
250
°
C
1.6 mm
–
2.5 mm
≥
2.5 mm
250
°
C
245
°
C
Reliability Test Program
T
e
st item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245
°
C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5
F
,
N
o. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5635080
10
Copyright
Sinopower Semiconductor, Inc.
Rev. A.4 – March, 2017
