Sinopower-Semicon-SM4307PSKC-TRG
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SM4307PSK
®
P-Channel Enhancement Mode MOSFET
Pin Description
Features
D
D
D
D
•
-30V/-11A,
R
DS(ON)
= 18m
Ω
(max.) @ V
GS
=-10V
R
DS(ON)
= 30m
Ω
(max.) @ V
GS
=-4.5V
S
S
S
G
•
Reliable and Rugged
•
Lead Free an
d
G
reen Device
s
A
vailable
T
o
p View of
SOP-8
(RoH
S
C
ompliant)
( 5,6,7,8 )
D D D D
(4)
G
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
S S S
(1, 2, 3)
P-Channe
l
M
OSFET
Ordering and Marking Information
Package Code
SM4307PS
K : SOP-8
Operating Junction Temperature Range
C : -55
to 150
o
C
Handling Code
TR : Tape & Reel (2500pcs/reel)
Assembly Material
Assembly Material
Handling Code
Temperature Range
Package Code
G : Halogen and Lead Free Device
4307
XXXXX
SM4307PS K
:
XXXXX – Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Absolute Maximum Ratings
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
V
DSS
Parameter
Rating
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
GSS
±
25
-11
T
A
=25
°
C
T
A
=70
°
C
a
I
D
Continuous Drain Current (V
GS
=-10V)
-8.5
-44
a
I
DM
A
300
µ
s Pulsed Drain Current (V
GS
=-10V)
Diode Continuous Forward Current
Avalanche Current, Single pulse (L=0.3mH)
Avalanche Energy, Single pulse (L=0.3mH)
Maximum Junction
T
e
mperature
a
I
S
-3
b
I
AS
-20
b
E
AS
60
mJ
T
J
150
-55 to 150
3.1
°
C
T
STG
Storage
T
e
m
p
e
r
a
t
ure Range
T
A
=25
°
C
a
P
D
Maximum Power Dissipation
W
T
A
=70
°
C
2
40
t
≤
10s
a,c
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Lead
R
θ
JA
°
C/W
Steady State
Steady State
75
R
θ
JL
24
Note a
：
Su
r
face Mounted on 1in
2
pad area, t
≤
10sec.
Note b
：
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Note c
：
Maximum under Steady State conditions is 75
°
C/W.
Electrical Characteristics
(T
A
= 25
°
C Unless Otherwise Noted)
SM4307PSK
Symbol
Parameter
Test Conditions
Unit
Min. Typ.
Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
-30
–
–
–
V
V
GS
=0V, I
DS
=-250
µ
A
V
DS
=-24V, V
GS
=
0
V
–
-1
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=85
°
C
–
–
-30
-2.5
±
100
18
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
–
1
.
5
-2
–
V
V
DS
=V
GS
, I
DS
=-250
µ
A
V
GS
=
±
25V, V
DS
=0V
V
GS
=-10V, I
DS
=-11A
V
GS
=-4.5V, I
DS
=-4A
–
–
–
nA
14
22
d
R
DS
(
O
N)
Drain-Source On-state Resistance
m
Ω
30
Diode Characteristics
d
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=-1A, V
GS
=0V
–
–
–
–
0
.
7
19
-1
–
V
e
t
rr
ns
nC
I
SD
=-11A,
di
S
D
/dt=100A/
µ
s
e
Q
rr
10
–
2
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Electrical Characteristics (Cont.)
(T
A
= 25
°
C Unless Otherwise Noted)
SM4307PSK
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
e
R
g
C
iss
C
oss
C
rss
t
d
(
ON)
t
r
Gate Resistance
–
–
–
–
–
–
–
–
3
1000
210
150
8
–
–
–
–
–
–
–
–
V
G
S
=0V, V
DS
=0V,F=1MHz
Ω
I
n
put Capacitance
V
G
S
=0V,
V
DS
=-15V,
Frequency=1.0MHz
Output Capacitance
R
e
verse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
pF
V
D
D
=-15V, R
L
=15
Ω
,
I
DS
=-1A, V
GEN
=-10V,
R
G
=
6
Ω
12
ns
t
d
(
OF
F
)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
e
32
16
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
21
2.6
6.2
–
–
–
V
DS
=-15V, V
GS
=-10V,
I
DS
=-11A
nC
Note d
：
Pulse test ; pulse width
≤
300
µ
s, duty cycle
≤
2%.
Note e
：
Guaranteed by design, not subject to production testing.
3
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Typical Operating Characteristics
Power Dissipation
Drain Current
3.5
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
6
4
2
T
A
=25
o
C,V
G
=-10V
T
A
=25
o
C
0.0
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
300
100
2
1
Duty =
0.5
0.2
0.1
10
1
0.05
0.02
0.1
0.01
1E-3
300
µ
s
1ms
0.01
10ms
100ms
Single Pulse
1s
0.1
0.01
DC
Mounted on 1in
2
pad
θ
JA
: 40
o
C/W
T
A
=25
o
C
R
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10
100
-V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
4
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
V
GS
= -4.5,-5,-6,-7,
-8,-9,-10V
-4V
V
GS
=-4.5V
-3.5V
-3V
V
GS
=-10V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
-V
DS
– Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
70
60
50
40
30
20
10
0
I
DS
=-250
µ
A
I
DS
=-11A
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
5
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
50
10
V
GS
= -10V
I
DS
= -11A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 14m
Ω
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
j
– Junction
T
e
m
perature (
°
C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1500
1350
1200
1050
900
750
600
450
300
150
0
10
Frequency=1MHz
V
DS
=-15V
I
DS
=-11A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
3
6
9
12
15
18
21
0
5
10
15
20
25
30
-V
DS
– Drain – Source Voltage (V)
Q
G
– Gate Charge (nC)
6
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Avalanche Test Circuit and Waveforms
V
DS
L
t
AV
DUT
E
AS
V
DD
R
G
V
DD
tp
I
AS
I
L
V
DS
0.01
Ω
t
p
V
DSX(SUS)
Switching Time Test Circuit and Waveforms
V
DS
R
D
t
d
(off)
t
f
t
d
(on)
t
r
DUT
V
GS
10%
V
GS
R
G
V
DD
tp
90%
V
DS
7
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Package Information
SOP-8
-T- SEATING
PLANE < 4 mils
SEE VIEW A
D
°
b
c
e
GAUGE PLANE
SEATING PLANE
L
VIEW A
SOP-8
S
Y
M
B
O
L
RECOMMENDED LAND PATTERN
MILLIMETERS
INCHES
1.27
MIN.
MAX.
1.75
MIN.
MAX.
A
0.069
0.010
0.004
0.049
0.012
0.007
0.25
A1
A2
b
0.10
1.25
0.31
0.17
4.80
5.80
3.80
2.2
0.020
0.010
0.51
0.25
5.00
6.20
4.00
c
D
5.74
0.189
0.228
0.150
0.197
0.244
0.157
E
2.87
E1
e
h
L
1.27 BSC
0.050 BSC
0.010
0.016
0.020
0.050
0.25
0.40
0.50
1.27
0.8
0.635
°
°
°
°
0
0
8
0
8
UNIT: mm
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension
“
D
”
does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension
“
E
”
does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
8
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Carrier Tape & Reel Dimensions
P0
P2
P1
A
OD0
K0
A0
A
OD1
B
B
SECTION A-A
SECTION B-B
d
T1
Application
SOP-8
A
H
T1
C
d
D
W
E1
F
12.4+2.00 13.0+0.50
-0.00 -0.20
330.0
±
2.00
50 MIN.
1.5 MIN.
20.2 MIN.
12.0
±
0.30 1.75
±
0.10 5.5
±
0.05
P0
P1
P2 D0
D1
T
A0
B0
K0
1.5+0.10
-0.00
0.6+0.00
-0.40
4.0 0.10
8.0 0.10
2.0 0.05
1.5 MIN.
6.40 0.20 5.20 0.20 2.10 0.20
±
±
±
±
±
±
(mm)
9
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
10
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
SM4307PSK
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (T
smin
)
Temperature max (T
smax
Time (T
smin
to T
smax
) (t
s
)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(T
smax
to T
P
)
3 C/second
max.
°
3 C/second max.
°
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6 C/second
max.
°
6 C/second
max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process
–
Classification Temperatures (Tc)
Volume mm
3
350
Package
Volume mm
3
<350
Thickness
≥
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process
–
Classification Temperatures (Tc)
Package
T
h
ickness
<1.6 mm
V
o
lume mm
3
V
o
lume mm
3
350-2000
260
°
C
Volume mm
3
>2000
<350
260
°
C
260
°
C
1.6 mm
–
2.5 mm
≥
2.5 mm
260
°
C
250
°
C
245
°
C
250
°
C
245
°
C
245
°
C
Reliability Test Program
T
e
st item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245
°
C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5
F
,
N
o. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5642050
11
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – December, 2013
