Sinopower-Semicon-SM4512NHKPC-TRG
| Part # | Sinopower-Semicon-SM4512NHKPC-TRG |
Download  | Sinopower-Semicon-SM4512NHKPC-TRG |
SM4512NHKP
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
30V/80A,
D
D
D
D
R
DS(ON)
= 1.9m
Ω
(Max.) @ V
GS
=10V
R
DS(ON)
= 3m
Ω
(Max.) @ V
GS
=4.5V
•
•
•
•
•
100% UIS + R
g
T
e
sted
G
Pin 1
S
S
S
Reliable and Rugged
DFN5x6A-8_EP
Lower Q
g
and Q
gd
for high-speed switching
Lower R
DS(ON)
to Minimize Conduction Losses
(5,6,7,8)
DD DD
Lead Free and Gree
n
D
evices Available
(RoHS Compliant)
(4)
G
Applications
•
Power Management in Desktop Computer or
DC/DC Converters.
S S S
( 1, 2, 3 )
N-Channe
l
M
OSFET
Ordering and Marking Information
Package Code
KP : DFN5x6A-8_EP
SM4512NH
Operating Junction Temperature Range
Assembly Material
Handling Code
C : -55
to 150
o
C
Handling Code
Temperature Range
TR : Tape & Reel
Assembly Material
Package Code
G : Halogen and Lead Free Device
4512NH
XXXXX
SM4512NH KP
:
XXXXX – Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Absolute Maximum Ratings
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
V
DSS
V
GSS
T
J
Drain-Source Voltage
Gate-Source Voltage
30
±
20
150
-55 to 150
42.5
80*
75
V
Maximum Junction
T
e
mperature
Storage Temperature Range
°
C
T
STG
I
S
Diode Continuous Forward Current
T
C
=25
°
C
T
C
=25
°
C
T
C
=100
°
C
T
C
=25
°
C
T
C
=25
°
C
T
C
=100
°
C
Steady State
T
A
=25
°
C
T
A
=70
°
C
T
A
=25
°
C
T
A
=70
°
C
t
≤
10s
a
I
D
Continuous Drain Current
Pulsed Drain Current
A
b
I
DM
160
78
P
D
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
W
°
C/W
A
31
1.6
R
θ
JC
28
c
I
D
22
2.3
c
P
D
Maximum Power Dissipation
W
1.5
20
c
Thermal Resistance-Junction to Ambient
°
C/W
R
θ
JA
Steady State
L=0.1mH
L=0.1mH
55
d
I
AS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
43
A
d
E
AS
92
mJ
Note a,*
：
Max. continue current is limited by bonding wire.
Note b
：
Pulse width is limited by max. junction temperature.
Note c
：
R
θ
JA
steady state t=999s.
Note d
：
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=
2
5
o
C).
2
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
30
34
–
–
–
–
V
V
V
GS
=0V, I
DS
=250
µ
A
Drain-Source Breakdown Voltage
VGS=0V, I
D(aval)
=40A
T
c
a
se
=25
°
C, t
t
r
ansient
=100ns
BV
DSSt
(transient)
V
DS
=24V, V
GS
=0V
T
J
=85
°
C
–
–
1
30
2.3
±
100
1.9
–
I
DSS
Zero Gate Voltage Drain Current
µ
A
–
–
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
1.3
1.6
–
V
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=
±
20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
T
J
=125
°
C
–
–
–
–
–
nA
1.5
2.2
2.2
32
e
R
DS(ON)
Drain-Source On-state Resistance
m
Ω
S
V
GS
=4.5V, I
DS
=12A
V
DS
=5V, I
DS
=15A
3
Gfs
Forward Transconductance
–
Diode Characteristics
e
V
SD
t
rr
Diode Forward Voltage
I
SD
=20A, V
GS
=0V
–
–
–
–
–
0.8
50
1.1
V
Reverse Recovery Time
Charge Time
–
–
–
–
t
a
23.5
27.5
45
ns
nC
Ω
I
SD
=20A, dl
SD
/dt=100A/
µ
s
t
b
Discharge Time
Q
rr
Reverse Recovery Charge
Dynamic Characteristics
R
G
C
i
s
s
C
o
s
s
C
rss
t
d(ON)
t
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
0.9
2
Input Capacitance
2820 3666
1910 2674
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
pF
140
15.5
11
210
–
–
–
–
V
DD
=15V, R
L
=15
Ω
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
Ω
ns
t
d
(
OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
35
40
V
DS
=15V, V
GS
=10V,
I
DS
=20A
Q
g
Total Gate Charge
–
44.5
57.8
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
–
–
–
–
21.2
2.9
–
–
–
–
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=4.5V,
I
DS
=20A
4.3
8.3
Note e
：
Pulse test ; pulse width
≤
300
µ
s, duty cycle
≤
2%.
3
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Typical Operating Characteristics
Power Dissipation
Drain Current
90
90
75
60
45
30
15
0
75
60
45
30
15
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
e
mperature
Thermal Transient Impedance
Safe Operation Area
3
1
300
100
Duty = 0.5
it
m
i
L
0.2
0.1
)
n
o
(
ds
R
100
µ
s
300
µ
s
1ms
0.05
0.1
0.01
1E-3
1E-4
0.02
0.01
10
1
Single Pulse
DC
θ
JC
:1.6
o
C/W
T
C
=25
o
C
R
0.1
0.01
1E-6
1E-5
1E-4
1E-3
0.01 0.1
0.1
1
10
100
Square Wave Puls
e
D
uration (sec)
V
DS
– Drain – Source Voltage (V)
4
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Typical Operating Characteristics (Cont.)
Thermal Transient Impedance
Safe Operation Area
2
1
300
100
Duty = 0.5
0.2
0.1
300
µ
s
10
1
0.05
0.1
0.01
1E-3
1ms
0.02
0.01
10ms
100ms
1s
0.1
0.01
Single Pulse
Mounted on 1in
2
pad
T
A
=25
O
C
DC
R
θ
JA
:55
o
C/W
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1
10 100
1000
Square Wave Puls
e
D
uration (sec)
V
DS
– Drain – Source Voltage (V)
Output Characteristics
Drain-Source On Resistance
160
140
120
100
80
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=3.5,4,5,6,7,8,9,10V
V
GS
=4.5V
V
GS
=10V
3V
60
40
20
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100 125 150
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
5
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Typical Operating Characteristics (Cont.)
Gate-Source On Resistance
Gate Threshold Voltage
7
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=20A
I
DS
=250
µ
A
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Source-Drain Diode Forward
Drain-Source On Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
10
1
V
GS
= 10V
I
DS
= 20A
T
j
=150
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 1.5m
Ω
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
6
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Typical Operating Characteristics (Cont.)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
4500
4000
3500
3000
2500
2000
1500
1000
500
Frequency=1MHz
V
DS
=15V
I
DS
=20A
Ciss
Coss
Crss
5
0
0
9
18
27
36
45
0
10
15
20
25
30
V
DS
–
D
rain-Source Voltage (V)
Q
G
–
G
ate Charge (nC)
Transfer Characteristics
150
120
90
60
30
0
T
j
=125
o
C
T
j
=25
o
C
0
1
2
3
4
5
V
GS
– Gate-Source Voltage (V)
7
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
Ω
t
AV
Switching Time Test Circuit and Waveforms
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
8
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter
“
Sinopower
”
) has been making
great efforts to development high quality and better performance products to
satisfy all customers
’
needs. However, a product may fail to meet customer
’
s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower
’
s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
9
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Classification Profile
10
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
SM4512NHKP
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (T
smin
)
Temperature max (T
smax
Time (T
smin
to T
smax
) (t
s
)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(T
smax
to T
P
)
3 C/second
max.
°
3 C/second max.
°
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6 C/second
max.
°
6 C/second
max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process
–
Classification Temperatures (Tc)
Volume mm
3
Package
Volume mm
3
Thickness
<350
≥
350
<2.5 mm
235
°
C
220
°
C
220
°
C
220
°
C
≥
2.5 mm
T
a
ble 2. Pb-free Process
–
Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
°
C
Volume mm
3
<350
>2000
260
°
C
245
°
C
245
°
C
260
°
C
1.6 mm
–
2.5 mm
≥
2.5 mm
260
°
C
250
°
C
250
°
C
245
°
C
Reliability Test Program
T
e
st item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245
°
C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
TCT
Customer Service
Sinopower Semiconductor, Inc.
5
F
,
N
o. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5635080
11
Copyright
Sinopower Semiconductor, Inc.
Rev. A.2 – January, 2017
