Slkor-SLKORMICRO-Elec–13001
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13001
General Purpose Transistors NPN Silicon
Product Summary
●
V
C
E
O
4
00
V
●
I
c
0.2
A
●
P
C
75
0mW
SOT-23
■
MAXIMUM RATINGS
(T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
600
400
7
V
V
V
V
CBO
V
CEO
V
EBO
A
Collector Current -Continuous
I
C
0.2
P
C
0.
75
W
Power Dissipation
Junction Temperature
Storage Temperature
150
℃
℃
T
J
-55
～
+150
T
STG
1
13001
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
V
CBO
V
CEO
V
EBO
V
BE
Testconditons
Ic=
0.1m
A
，
I
E
=0
Min
600
400
7
Typ
Max
Unit
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter – base breakdown voltage
Base-emitter voltage
Ic=1mA
，
I
B
=0
V
I
E
=
0.1m
A
，
I
C
=0
I
E
=
100m
A
1.1
1
00
1
00
1
00
0.5
1.2
70
Collector cut-off current
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
t
s
V
CB
=600V , I
E
=0
V
CE
=400V , I
B
=0
V
EB
=
7
V , I
C
=0
μ
A
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base – emitter saturation voltage
I
C
=
100
mA, I
B
=
2
0mA
I
C
=
100
mA, I
B
=
2
0mA
V
CE
=20V, I
C
=20mA
V
CE
=10V, I
C
=0.25mA
V
1
0
DC current gain
5
Storage time
Fall time
1.5
0.3
I
C
=50mA, I
B1
=-I
B2
=5mA,
V
CC
=45V
μ
s
t
f
Transition frequency
f
T
V
CE
= 20V, I
C
=20mA,f=1MHz
8
MHz
2
