Slkor-SLKORMICRO-Elec–BD140
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BD140
PNP 半导体三极管
Silicon PNP transistor
描述
/ Descriptions
TO-126 塑封封装 PNP 半导体三极管。
Silicon PNP transistor in a TO-126 Plastic Package.
特征
/ Features
用途
/ Applications
与 BD139 互补。用于中功率电路及开关电路。
Complement to BD139
。
Medium power linear and switching applications
内部等效电路
/ Equivalent
Circuit
引脚排列
/ Pinning
1
2
3
PIN1
：
Emitter PIN
2
：
Collector PIN
3
：
Base
放大及印章代码
/ h
Classifications & Marking
FE
& Marking
*HFE(1)
分档及打印
分 档
1
100~250
16
2
160~320
25
印记见下
具体内容以打印为准
H
FE(1)
打印（简例）
其
BD140
25
它
说
明
封装外形：
TO-126
管脚排列：E、
C
、B
E C B
1
BD140
极限参数
/ Absolute
Maximum Ratings(Ta=25
℃
)
参数
符号
数值
单位
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
V
V
CBO
-80
-80
-5.0
V
V
V
CEO
V
EBO
I
Collector Current – Continuous
Base Current – Continuous
Collector Power Dissipation
Collector Power Dissipation
-1.5
-0.5
1.25
12.5
A
A
C
I
B
P
C
W
W
P (Tc=25
℃
)
C
T
j
Junction Temperature
150
℃
℃
-55
～
150
Storage Temperature Range
T
stg
电性能参数
/ Electrical
Characteristics(Ta=25
℃
)
参数
符号
测试条件
最小值 典型值
最大值
单位
Parameter
Collector to Emitter Breakdown
Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
I =-30mA
I =0
B
V
CEO
-80
V
C
V
=-30V I
=0
E
Collector Cut-Off Current
Emitter Cut-Off Current
I
CBO
-0.1
-10
μA
μA
CB
EB
CE
CE
CE
V
V
V
V
=-5.0V I
=0
C
I
EBO
=-2.0V I
=-150mA
C
h
FE(1)
h
FE(2)
h
FE(3)
40
25
25
250
=-2.0V I
=-500mA
C
DC Current Gain
=-2.0V I
=-5.0mA
C
Collector to Emitter Saturation
Voltage
I =-500mA
I =-50mA
V
CE(sat)
-0.5
-1.0
V
V
C
B
V
=-2.0V I
=-500mA
CE C
Base to Emitter On Voltage
V
BE(on)
2
