Slkor-SLKORMICRO-Elec–S9013
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S9013
NPN Silicon Epitaxial Planar Transistor
FEATURES
z
z
z
z
High Collector Current.(I
C
= 500mA
）
Complementary
T
o
S
9012.
Excellent H
FE
Linearity.
Power dissipation.(P
C
=300mW)
APPLICATIONS
z
High Collector Current.
SOT-23
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Units
V
Collector-Base Voltage
40
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
5
V
Collector Current -Continuous
Collector Dissipation
500
300
-55~150
mA
mW
℃
P
C
Junction and Storage Temperature
T
j,
T
stg
1
S9013
ELECTRICAL CHARACTERISTICS
@
T
a
=2
5℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100
μ
A,I
E
=0
40
V
V
V
V
(BR)CEO
V
(BR)EBO
I
C
=0.1mA,I
B
=0
25
5
I
E
=100
μ
A,I
C
=0
I
CBO
I
CEO
I
EBO
V
CB
=40V,I
E
=0
V
CE
=20V,I
B
=0
V
EB
=5V,I
C
=0
0.1
0.1
0.1
400
μ
A
μ
A
μ
A
Collector cut-off current
Emitter cut-off current
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=500mA
120
40
DC current gain
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
C
=500mA, I
B
= 50mA
I
C
=500mA, I
B
= 50mA
V
CE(sat)
V
BE(sat)
0.6
1.2
V
V
V
CE
=6V, I
C
= 20mA
f=30MHz
Transition frequency
f
T
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
L
H
J
Range
120-200
200-350
300-400
2
S9013
SOT-23 Package Information
A
SOT-23
Min
Dim
A
Max
2.95
1.35
E
2.85
K
B
B
1.25
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
G
H
J
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
4
