Slkor-SLKORMICRO-Elec–SL2026
| Part # | Slkor-SLKORMICRO-Elec–SL2026 |
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SL2026
-20V/-3.2A P-Channel MOSFET
Product Summary
Features
V
DS
R
DS(ON)
MAX
I
D
MAX
-3.2A
• Leading trench technology for low R
DS(on)
•
Low Gate Charge
65mΩ@-4.5V
-20V
81mΩ@-2.5V
Application
•
Video monitor
•
Power management
D
S
D
G
SOT-23 top view
Schematic diagram
M26: Device code
M26
G
S
Marking and pin assignment
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
Drain-Source Breakdown Voltage
-20
±12
V
V
V
DS
Gate-Source Voltage
V
GS
Maximum Junction Temperature
150
°C
°C
A
T
J
Storage Temperature Range
-55 to 150
-3.2
T
STG
Diode Continuous Forward Current
T
c
=25°C
I
S
Mounted on Large Heat Sink
Pulse Drain Current Tested
T
c
=25°C
-12
-3.2
0.35
357
A
A
I
DM
Continuous Drain Current@GS=10V
T
c
=25°C
T
c
=25°C
I
D
Maximum Power Dissipation
W
P
D
Thermal Resistance Junction-to-Ambient
°C/W
R
θJA
1
SL2026
Electrical Characteristics (TJ=25
℃
unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
VGS=0V
，
ID=-250μA
VDS=-20V
，
VGS=0V
VGS=±10V
，
VDS=0V
VDS=VGS
，
ID=-250μA
VGS=-4.5V
，
ID=-3.2A
VGS=-2.5V
，
ID=-2.8A
VGS=-1.8V
，
ID=-2.3A
-20
—
—
—
—
-1
V
BV
(BR)DSS
I
DSS
uA
nA
V
—
—
±100
-1.0
65
I
GSS
-0.4
—
-0.75
56
70
—
V
GS(th)
mΩ
mΩ
mΩ
Drain-Source On-State Resistance
—
81
R
DS(on)
—
110
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Input Capacitance
—
—
—
400
73
—
—
—
pF
pF
pF
C
I
SS
VDS=-10V
，
VGS=0V
，
f=1MHz
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
54
Switching Characteristics
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
—
—
—
—
—
—
—
5.3
0.7
1.2
11
—
—
—
—
—
—
—
nC
nC
nC
nS
nS
nS
nS
Q
g
VDS=-10V
，
ID=-3A
，
VGS=-4.5V
Q
gs
Q
gd
t
d(on)
t
r
35
VDD=-10V
，
ID=-1A
，
VGS=-4.5V
，
RG=2.8Ω
28
t
d(off)
t
f
10
Source- Drain Diode Characteristics
Forward on
v
o
ltage
Tj=25
℃，
Is=-2.8A
，
—
—
-1.2
V
V
SD
2
SL2026
Typical Operating Characteristics
-3
-2
-1
0
-10
-8
VGS=-2.0V
-6
-4
V
DS
=-10V
VGS=-1.5V
-2
0
0
1
2
3
4
0
-1
-2
-3
-4
Qg -Total Gate Charge (nC)
VDS, Drain -Source Voltage (V)
Fig2. Typical Gate Charge Vs.Gate-Source Voltage
Fig1. Typical Output Characteristics
100
80
1.4
1.2
1
VGS=-4.5V
VGS=-2.5V
VGS=-4.5V
60
40
20
0.8
0
-2
-4
-6
-8
-10
0
25
50
75
100
125
ID, Drain-Source Current (mA)
Fig3. Drain-Source on Resistance
Tj – Junction Temperature (°C)
Fig4. Normalized On-Resistance Vs. Temperature
700
Limit by R
DS(ON)
600
500
400
300
200
100
0
10
1
Ciss
1ms
10ms
100ms
0.1
DC
0.01
Coss
Crss
16
0.001
0
4
8
12
20
0.1
1
10
100
-VDS, Drain -Source Voltage (V)
Fig5. Maximum Safe Operating Area
-VDS , Drain-Source Voltage (V)
Fig6 Typical Capacitance Vs.Drain-Source Voltage
3
SL2026
SOT-23 Package information
Dimensions in
M
illimeters(mm)
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950TYP
0.550REF
0.037TYP
0.022REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
4
