Slkor-SLKORMICRO-Elec–SL20T65FL
| Part # | Slkor-SLKORMICRO-Elec–SL20T65FL |
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SL20T65 Series
Features
Low gate charge
Trench FS
T
echnology,
saturation voltage: V
CE(sat)
,
typ =1.6V,IC=20A and TC =25°C
RoHS product
Applications
General purpose inverters
UPS
Absolute Ratings
（
Tc=25
℃）
SL20T65
/
SL20T65FL
Parameter
Symbol
SL20T65F
Unit
SL20N65FZ
Collector-Emmiter Voltage
Collector Current-continuous
Vces
650
40
V
A
A
A
Ic T=25
℃
T=100
℃
20
Collector Current-pulse(note 1)
Diode RMS forward current
Gate-Emmiter Voltage
I
CM
80
40
20
A
A
V
A
I
F
T=25
℃
T=100
℃
V
GES
–
±20
180
Turn-off safe area
Surge non repetitive forward
current tp=10ms sinusoidal
I
FSM
80
A
Power Dissipation
Diode Forward Current
P
D
T
C
=25
℃
T
C
=100
℃
T
STG
35
156
20
162
W
A
Storage Temperature Range
Operating Temperature Range
-55~+150
-55~+175
℃
℃
T
J
Maximum Lead Temperature
for Soldering Purposes
T
L
300
℃
*Collector current limited by maximum Junction temperature
Thermal Characteristic
Parameter
Symbol
Tests conditions
Min Typ Max
Units
Off-Characteristics
Collector-Emmiter
Voltage
BV
CES
I
C
=500μA,V
GE
=0V 650
–
–
V
1
SL20T65 Series
Breakdown Voltage
Temperature
I
C
=1mA,referenced
△
BV
CES
/
△
T
J
–
0.5
–
V/
℃
to 25
℃
Coefficient
Zero Gate Voltage
Collector Current
V
CE
=650V,V
GE
=0V,
I
CES
–
–
10
μA
T
C
=25
℃
Gate-body leakage
current
I
GES
V
CE
=0V,V
GE
=
±
20V
–
–
±200 nA
On-Characteristics
Gate-Emmiter
V
CE
=V
GE
,
lc=250uA
V
GE(th)
4.5
–
6.5
V
V
Threshold Voltage
V
GE
=15V,I
C
=20A
，
T
C
=25
℃
1.6 2.0
Collector-Emmiter
saturation Voltage
V
CESAT
Tc=125
℃
T
C
=175
℃
1.75 2.15
1.9 2.3
V
GE
=15V
Short Collector current
(Note 2)
Ic(sc)
VCE=360V tsc<
10us Tc<=25
℃
116.7
A
Dynamic Characteristics
Input capacitance
Output capacitance
Cies
–
–
1500
128
–
–
pF
pF
VCE=25V,
VGE=0V,
f=1.0MHZ,
Tc=25
℃
Coes
Reverse transfer
capacitance
Cres
–
28.7
–
pF
Switching Characteristics
Turn-On delay time
Turn-On rise time
Turn-off delay time
Turn-off Fall time
Turn-on energy
t
d
(on)
t
r
–
–
–
–
–
–
–
–
–
–
–
–
–
–
16
56
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
V
CE
=400V,Ic=20A,
R
G
=10Ω,V
GE
=15V
Tc=25
℃
Inductive
Load
t
d
(off)
t
f
52
ns
82
ns
E
on
E
off
E
total
t
d
(on)
t
r
0.79
0.3
1.09
14
mJ
mJ
mJ
ns
Turn-off energy
Total switching Energy
Turn-On delay time
Turn-On rise time
Turn-off delay time
Turn-off Fall time
Turn-on energy
54
ns
V
CE
=400V,Ic=20A,
R
G
=10Ω,V
GE
=15V
Tc=175
℃
t
d
(off)
t
f
76
ns
146
0.8
0.49
1.3
ns
E
on
E
off
E
total
mJ
mJ
mJ
Inductive Load
Turn-off energy
Total switching Energy
2
SL20T65 Series
Total Gate Charge
Qg
–
–
43.9
10.0
–
–
VCE=400V,Ic=20A
R
G
=10Ω,V
GE
=15V
T
C
=25
℃
(note3,4)
Gate to emitter charge
Qge
nC
Ω
Gate to collector
charge
Qgc
Rg
–
–
18.9
1.8
–
–
f=1MHz,open
collector
Gate resistance
Anti-Paraller Diode Characteristics and Maximum Ratings
V
GE
=0V,I
F
=20A.
–
1.4
–
V
T
C
=25
℃
Diode Forward
Voltage
V
F
T
C
=125
℃
–
–
1.2
1.0
–
–
V
V
T
C
=175
℃
Diode Reverse
recovery time
Reverse recovery
charge
t
rr
Q
rr
Irrm
t
rr
–
–
–
–
–
–
254
347
2.7
–
–
–
–
–
–
ns
nC
A
V
GE
=0V, IF=20A
dl=/dt=100A/us
(note 4)
T
C
=25
℃
Diode Reverse
recovery Current
Diode Reverse
recovery time
Reverse recovery
charge
429
1010
4
ns
nC
A
VGE=0V, IF=20A
dl=/dt=100A/us
(note 4)
Q
rr
Irrm
T
C
=175
℃
Diode Reverse
recovery Current
Thermal Characteristics
SL20T65
/
SL20T65F
Parameter
Symbol
Unit
SL20T65FL
SL20T65FZ
IGBT Thermal Resistance,
Junction to Case
R
th(j-c)
R
th(j-c)
R
th(j-A)
3.57
7.7
0.77
0.77
2.05
33.8
℃
/W
℃
/W
℃
/W
FRD Thermal Resistance,
Junction to Case
2.05
62.5
Thermal Resistance,
Junction to Ambitent
62.5
Order Message
Order codes
SL20T65F
SL20T65
Package
TO-220F
TO-220
TO-263
TO-247
Packaging
Tube
Tube
SL20T65FZ
SL20T65FL
Tube
Tube
3
