Slkor-SLKORMICRO-Elec–SL22N65CF
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SL22N65C/SL22N65CF
650V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using Slkor’s
advanced Superjunction MOSFET technology.
– 22A, 650V, R
DS(on)
=170mΩ@V
GS
= 10 V
– Low gate charge(typ. Qg = 30.2nC)
– High ruggedness
– Ultra fast switching
– 100% avalanche tested
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies.
– Improved dv/dt capability
D
G
SL22N65C
SL22N65CF
S
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
SL22N65C/SL22N65CF
Units
V
Drain-Source Voltage
650
22 *
12*
V
DSS
Drain Current
– Continuous (T
C
= 25
℃
)
A
I
D
– Continuous (T
C
= 100
℃
)
A
(Note 1)
I
DM
V
GSS
EAS
I
AR
Drain Current
– Pulsed
57 *
A
ꢀ
Gate-Source Voltage
30
±
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
985
4
mJ
A
E
AR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
1.62
20
mJ
dv/dt
V/ns
100
Power Dissipation (T
C
= 25
℃
)
36
W
W/
℃
℃
P
D
– Derate above 25
℃
0.29
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
T
L
260
℃
1/8″ from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
SL22N65C/SL22N65CF
Symbol
R
θJC
Parameter
Units
℃
/W
℃
/W
℃
/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
3.5
–
R
θJS
62.5
R
θJA
Rev.1 — 28 November 2018
1
SL22N65C/SL22N65CF
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V,
I
D
= 1mA
650
650
—
—
—
—
V
V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 1mA,TJ = 150
℃
V
DS
= 600 V, V
GS
= 0 V
V
DS
=480 V, T
C
= 125
℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
—
—
—
—
—
2
1
—
uA
uA
nA
nA
I
DSS
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
—
—
100
-100
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1.7mA
V
GS
= 10 V, I
D
= 10 A
2.5
—
—
4.5
V
Static Drain-Source
On-Resistance
150
170
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
1240
34
—
—
—
pF
pF
pF
V
DS
= 400 V, V
GS
= 0 V,
f = 250KHz
Output Capacitance
Reverse Transfer Capacitance
3.2
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
12
8
—
—
—
—
—
—
—
ns
ns
ꢀ
V
DS
= 400 V, I
D
= 10 A,
R
G
= 10 Ω,VGS = 10 V
53
10
ns
(Note 4, 5)
ns
Q
g
Q
gs
Q
gd
30.2
5.8
nC
nC
nC
V
DS
= 400 V, I
D
= 10 A,
V
GS
= 10 V
(Note 4, 5)
15.4
R
G
Gate Resistance
f = 1MHz
1.3
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
—
22
57
1.2
—
A
A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 10 A
V
DD
= 400 V, I
S
= 10A,
dI
F
/ dt = 100 A/us
—
V
274
3.33
ns
uC
(Note 4)
Q
rr
Reverse Recovery Charge
—
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=79mH
I
AS
= I
D
, V
DD
= 50V, R
G
= 25Ω, Starting
T
J
= 25
°
C
3. I
SD
I
D
di/dt
200A/us, V
DD
400
,
Starting T
J
= 25
°
C
4. Pulse Test : Pulse width
300us, Duty cycle
2%
5. Essentially independent of operating temperature
Rev.1 — 28 November 2018
2
SL22N65C/SL22N65CF
Typical Characteristics
70
60
50
40
30
20
10
0
70
※
Note: T
C
= 25
℃
※
Note: V
DS
= 20 V
20 V
25
℃
60
10 V
50
8 V
40
7 V
30
150
℃
6 V
20
10
0
5.5 V
5 V
4.5 V
0
2
4
6
8
10
12
0
5
10
15
20
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain to Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
10
1
0.4
※
Note: V
GS
= 0 V
※
Note: T
C
= 25
℃
150
℃
0.3
25
℃
V
GS
= 20 V
V
GS
= 10 V
0.2
0.1
0.1
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
50
60
70
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 3. On-Resistance Variation
vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
100000
10000
1000
100
10
8
C
oss
C
iss
V
DS
= 120 V
V
DS
= 400 V
6
C
rss
4
※
Note:
10
1. V
GS
= 0 V
2. f = 250 kHz
2
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
1
※
Note: I
D
= 8.5 A
0
0.1
0
5
10
15
20
25
30
35
0.1
1
10
100
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Rev.1 — 28 November 2018
3
SL22N65C/SL22N65CF
Typical Characteristics
(Continued)
1.2
3
2.5
2
※
Note:
1. V
GS
= 0 V
2. I
D
= 1 mA
※
Note:
1. V
GS
= 10 V
2. I
D
= 8.5 A
1.1
1
1.5
1
0.9
0.8
0.5
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
℃
]
T
J
, Junction Temperature [
℃
]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
100
10
20
15
10
5
10 μs
100 μs
1 ms
10 ms
100 ms
DC
1
Operation in this area
is limited by R
DS(on)
0.1
0.01
※
Note:
1. T
C
= 25
℃
2. T
J
= 150
℃
3. Single Pulse
0
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10.
Maximum Drain Current vs.
Case Temperature
8
10
1
D = 0.5
6
4
2
0
0.2
0.1
0.05
0.02
0.01
0.1
0.01
single pulse
0.001
0
100
200
300
400
500
600
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0 1E+1 1E+2
V
DS
, Drain-Source Voltage [V]
t
p
, Rectangular Pulse Duration [sec]
Figure 11.
E
oss
vs. Drain to Source Voltage
Figure 12.
Transient Thermal Response Curve
Rev.1 — 28 November 2018
4
SL22N65C/SL22N65CF
Gate Charge Test Circuit
& Waveform
Current Regulator
V
GS
Same Type
as DUT
50KΩ
200nF
Q
g
12V
10V
300nF
V
DS
Q
gs
Q
gd
V
GS
DUT
3mA
R
1
R
2
Charge
Current Sampling (I
G
) Current
Sampling (I
D
)
Resistor Resistor
Resistive Switching Test Circuit
& Waveforms
R
L
V
out
V
in
V
out
90%
V
DD
( 0.5 rated V
DS
)
R
G
DUT
10%
V
in
10V
t
d(on)
t
r
t
on
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit
& Waveforms
L
L
1
2
—-
E
AS
=
L
L
I
AS
V
DS
2
Vary t
p
to obtain
required peak I
D
I
D
BV
DSS
I
AS
R
G
C
V
DD
I
D
(t)
DUT
V
DD
V
DS
(t)
10V
t
p
Time
t
p
Rev.1 — 28 November 2018
5
SL22N65C/SL22N65CF
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
+
DUT
V
DS
—
I
S
L
Driver
V
GS
Same Type
as DUT
R
G
V
DD
•
dv/dt controlled by R
G
V
GS
•
I
SD
controlled by pulse period
Gate Pulse Width
————————–
Gate Pulse Period
V
GS
D =
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
( DUT )
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Rev.1 — 28 November 2018
6
SL22N65C/SL22N65CF
TO-220C OUTLINE
TO-220C
OUTLINE
THIRD ANGLE SYSTEM
NAME
DWGNO
UNIT
PAGE
mm
DESIGNED
CHECKED
APPROVED
Shawn Chen
1 OF 1
VERSION
Ver1.0
ISSUE DATE
Rev.1 — 28 November 2018
7
SL22N65C/SL22N65CF
TO-220F OUTLINE
4.70
±
0.2
10.16
±
0.2
2.54
±
0.2
6.68
±
0.3
2.76
±
0.2
Φ3.18
±
0.2
1.3
±
0.2
0.8
±
0.2
0.5
±
0.1
2.54
±
0.2
NOTE
：
1The plastic package is not marked as smooth surfaceRa=0.1;Subglossy surfaceRa=0.8
2.Undeclared tolerance
±
0.15,Unmarked filletRmax=0.25
Rev.1 — 28 November 2018
8
