Slkor-SLKORMICRO-Elec–SL2310
| Part # | Slkor-SLKORMICRO-Elec–SL2310 |
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SL2310
N-Channel
Power MOSFET
D
General Features
●
V
DS
=60
V
,
I
D
=3A
G
R
DS(ON)
<105m
Ω
@ V
GS
=10V
R
DS(ON)
< 125m
Ω
@ V
GS
=4.5V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
S
Schematic Diagram
Application
●
Battery switch
●
DC/DC converter
Pin Assignment
SOT-23 top view
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Drain-Source Voltage
60
V
DS
V
GS
I
D
Gate-Source Voltage
±20
V
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
3
10
A
A
I
DM
Maximum Power Dissipation
1.7
W
℃
P
D
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θ
JA
73.5
℃
/W
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250
μ
A
60
–
65
–
–
V
V
DS
=60V,V
GS
=0V
1
μ
A
1
SL2310
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
I
GSS
V
GS
=±20V,V
DS
=0V
–
–
±100
nA
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=3A
V
DS
=15V,I
D
=2A
1.0
1.3
78
95
3
2.0
105
125
–
V
–
–
m
Ω
m
Ω
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
247
34
–
–
–
PF
PF
PF
V
DS
=30V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
19.5
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
6
15
15
10
6
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=30V,I
D
=1.5A
V
GS
=10V,R
GEN
=1
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=30V,I
D
=3A,
Gate-Source Charge
1
V
GS
=4.5V
Gate-Drain Charge
1.3
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=3A
–
–
–
–
1.2
3
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
2
SL2310
Typical Electrical and Thermal Characteristics
Vdd
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
90%
10%
D
Vout
Vgs
INVERTED
Rgen
G
10%
50%
90%
50%
S
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
3
SL2310
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
4
SL2310
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
5
SL2310
SOT-23 Package Information
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.100
1.050
0.500
c
0.150
D
3.000
E
1.400
E1
e
2.550
0.950TYP
2.000
e1
L
1.800
0.550REF
0.500
L1
θ
0.300
0°
8°
6
