Slkor-SLKORMICRO-Elec–SL3N06
| Part # | Slkor-SLKORMICRO-Elec–SL3N06 |
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SL3N06
N-Channel
Power MOSFET
MAXIMUM RATINGS
Characteristic
Symbol
BV
DSS
V
GS
Max
60
Unit
V
Drain-Source
V
o
ltage
Gate- Source
V
o
ltage
Drain Current
–
continuous
Drain Current-pulsed
V
+20
I
DR
A
3
I
DRM
10
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1380
Unit
mW
P
D
Total Device Dissipation
T
=
25
℃
A
Derate above25
℃
3.8
90
mW/
℃
℃
/W
R
Θ
JA
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
T
J
,
T
stg
150
℃
,
-55to+150
℃
1
SL3N06
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
unless otherwise note
d
)
Characteristic
Symbol
Min
60
1
Typ
—
—
—
—
—
Max
—
Unit
Drain-Source Breakdown
V
o
ltage
BV
V
V
DSS
(I
D
=250uA,V =0V)
GS
Gate Threshold
V
o
ltage
3
V
GS(th)
(I
D
=250uA,V =
V )
GS
DS
Diode Forward
V
o
ltage Drop
(I
SD
=1A,V =0V)
V
—
—
—
1.5
1
V
SD
DSS
GSS
GS
Zero Gate
V
o
ltage Drain Current
(V =0
V
,
V =
6
0V)
I
I
u
A
n
A
GS
DS
Gate Body Leakage
(V =+20
V
,
V
=
0V)
+100
GS
DS
Static Drain-Source On-State Resistance
(I
D
=3A,V =10V)
R
DS(ON)
—
—
90
mΩ
GS
(I
D
=2A,V =4.5V)
120
GS
Input Capacitance
C
—
—
—
—
—
—
550
125
40
pF
pF
ns
ISS
(V =0
V
,
V
=
25
V
,
f=1MHz)
GS
DS
Common Source Output Capacitance
(V
GS
=0
V
,
V
DS
=25
V
,
f=1MHz)
C
OSS
Turn-ON Time
t
(on)
(V =30
V
,
I
=
200mA,
R
=25
Ω
)
=25
Ω
)
DS
D
GEN
GEN
Turn-OFF Time
(V =30
V
,
I
=
200mA,
R
t
—
—
80
ns
(off)
DS
D
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3. Pulse
Width<300
μ
s; Duty Cycle<2.0%.
2
SL3N06
SOT-23 Package Information
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.100
1.050
0.500
c
0.150
D
3.000
E
1.400
E1
e
2.550
0.950TYP
2.000
e1
L
1.800
0.550REF
0.500
L1
θ
0.300
0°
8°
3
