Slkor-SLKORMICRO-Elec–SL5N100F
| Part # | Slkor-SLKORMICRO-Elec–SL5N100F |
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SL5N100
N-channel 1000
V
–3
5
Ω 5A
–
General features
Type
VDSS(@Tjmax)
ID
RDS(on)
< 4.2
Ω
< 4.2
Ω
< 4.2
Ω
< 4.2
Ω
< 4.2
Ω
SL5N100P
SL5N100F
SL5N100
1000 V
1000 V
1000 V
1000 V
1000 V
5A
5A
5A
5A
5A
SL5N100K
SL5N100D
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Applications
Switching application
Order codes
Partnumber
SL5N100P
SL5N100F
Package
TO-3PH
TO-220F
SL5N100
TO-220
SL5N100K
SL5N100D
TO-263/D2PAK
TO-252/DPAK
Electrical ratings
Absolute maximum ratings
Value
Unit
Parameter
Symbol
TO-220/
TO-252
TO-3PH TO-220F
TO-263
Drain-source voltage
（
V
GS
=0)
V
DS
V
GS
1000
V
A
Gate-source voltage
±30
5
Drain current
（
continuous
）
at
TC=25
℃
I
D
Drain current
（
continuous
）
at
TC=100
℃
I
D
3
Drain current
（
pulsed
）
I
DM
18
48
18
60
18
60
18
80
Total dissipation at TC=25
℃
PTOT
W
1
SL5N100
Drain source ESD
V
ESD(GS)
dv/dt
4000
4.5
V
(HBM-C=100pF,R=1.5KΩ
）
Peak diode recovery voltage
slope
V/ns
Insulation withstand
voltage(RMS)from all three
leads to external heat sink
(t=1s TC=25
℃）
V
ISO
2500
v
Operating junction temperature
Storage temperature
T
J
-55 to 175
℃
T
STG
Thermal data
Parameter
Value
Symbol
Unit
TO-220/
TO-220F TO-3PH
TO-263
0.63
TO-252
Thermal resistance junction
max
Rthj-case
Rtha-case
T
4.2
68
2.6
58
4.2
℃
/W
℃
/W
mJ
Thermal resistance
68
35
junction-ambient max
Maximum lead temperature
for soldering purpose
350
Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current repetitive or not-repetitive
(pulse width limited by Tj Max)
IAR
5
A
Single pulse avalanche energy
EAS
583
mJ
(starting Tj=25
℃
Id=lar Vdd=50V)
Electrical characteristics
(T
CASE
=25
℃
unless otherwise specified)
On/off states
Parameter
Symbol Test conditions Min Typ Max Unit
V(BR)DS
Drain-source breakdown voltage
ID=1mA VGS=0
1000
V
S
VDS=Max rating
TC=125
℃
1
μA
μA
Zero gate voltage drain current
(VGS=0)
IDSS
50
Gate body leakage current (VGS=0)
Gate threshold voltage
IGSS
VGS=
±
20V
±
10 μA
3.5 4.5
VDS=VGS ID=100
VGS(th
）
3
V
μ
A
2
SL5N100
Static drain-source on resistance
RDS(on
）
VGS=10V ID=1.75A
3.5 4.2
Ω
Dynamic
Parameter
Forward
Symbol
Test conditions
Min Typ
Max Unit
g
fs
V
DS
= 40 V, I
D
= 4A
5
S
transconductance
C
iss
483
45
Input capacitance
Output capacitance
Reverse transfer
capacitance
C
oss
V
DS
=25V,f=1MHz,V
GS
=0
V
GS
=0,V
DS
=0 to 800V
pF
C
rss
9
Equivalent Output
capacitance
C
oss eq.
46.8
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
Gate input resistance
R
g
3.65
Ω
Q
g
Q
gs
Q
gd
t
d(on)
t
r
12.67
3.7
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=750V,I
D
=4A
V
GS
=10V
nC
4.23
11.3
18.5
55
Turn-on delay time
Rise time
V
DD
= 500 V, I
D
= 1.75 A,
R
G
= 4.7 Ω, V
GS
= 10 V
ns
Turn-off-delay time
Fall time
t
d(off)
t
f
17
Source Drain Diode
Parameter
Symbol
Test conditions
Min Typ
Max Unit
Source Drain Current
I
SD
5
A
Source Drain
I
SDM
20
1.2
A
Current(Pulsed)
Forward On Voltage
V
SD
Trr
I
SD
=5A,V
GS
=0V
V
Reverse Recovery Time
I
SD
=4A,di/dt=100A/μS
154
677
ns
Reverse Recovery
Charge
Qrr
V
R
=100V,Tj=150
℃
nC
A
Reverse Recovery
Current
I
RRM
5.23
3
