Slkor-SLKORMICRO-Elec–SL64N10
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SL64N10
N-Channel Enhancement Mode MOSFET
Pin Description
Product Summary
TO-220-3L
(TOP view)
Symbol
Symbol
N-Channel
Unit
V
V
DSS
100
10.7
64
R
DS(ON)-Max
ID
m
Ω
A
Feature
Applications
⚫
⚫
⚫
⚫
Fast switching speed
⚫
Motor drivers
Reliable and Rugged
⚫
DC-DC Converter
ROHS Compliant & Halogen-Free
100% UIS Tested
Ordering Information
Orderable Part Number
Package Type
Form
Shipping
Marking
SL64N10
TO-220-3L
Tube
50 / Tape & Reel
Absolute Maximum Ratings
(T
J
=25°C Unless Otherwise Noted)
Symbol
V
DSS
V
GSS
T
J
Parameter
N-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
100
±20
150
-55 to 150
122
64
V
Maximum Junction Temperature
Storage Temperature Range
Pulse Drain Current Tested
°C
°C
A
T
STG
①
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
L=0.1mH
L=0.1mH
I
DM
I
D
Continuous Drain Current
A
41
83
P
D
Maximum Power Dissipation
W
33
②
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
20
A
I
AS
②
20
mJ
E
AS
Thermal Characteristics
Symbol
Parameter
Rating
1.5
Unit
°C/W
°C/W
R
JC
Thermal Resistance-Junction to Case
Steady State
Steady State
③
R
JA
Thermal Resistance-Junction to Ambient
Max. current is limited by bonding wire
UIS
Surface Mounted on 1in
FR-4 board with 1oz.
62.5
Note
①
②
③
：
：
：
Note
Note
tested and pulse width are limited by maximum junction temperature 150
C
°
2
Rev.1 — 10 May 2019
1
SL64N10
N-Channel Electrical Characteristics
(T
J
=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Static Electrical Characteristics
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
V
GS
=0V, I
DS
=250uA
V
DS
=80V, V
GS
=0V
V
DS
=V
GS
, I
DS
=250uA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
V
GS
=6V, I
DS
=20A
100
–
–
–
1
V
uA
V
–
2
–
V
GS(th)
I
GSS
3
4
Gate Leakage Current
–
±100
10.7
16
–
nA
–
8.9
12.5
18.5
④
R
DS(ON)
Drain-Source On-state Resistance
m
Ω
–
gfs
Forward Transconductance
V
DS
=5V, I
DS
=10A
–
S
⑤
Dynamic Characteristics
V
GS
=0V,V
DS
=0V,
Freq.=1MHz
R
G
Gate Resistance
–
0.9
–
Ω
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
–
–
–
–
–
–
–
1558
523
55
–
–
–
–
–
–
–
V
GS
=0V,
V
DS
=50V,
Freq.=1MHz
pF
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
t
10.4
17.5
26.5
68.9
d
(ON)
V
GS
=10V,V
DS
=30V,
I
D
=1A,R
GEN
=6
Ω
t
r
t
d(OFF)
t
f
nS
nC
Turn-off Delay Time
Turn-off Fall Time
V
GS
=6V,V
DS
=50V
I
D
=20A
Q
g
Total Gate Charge
–
19.9
–
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
30.1
8.8
–
–
–
V
GS
=10V,V
DS
=50V,
I
D
=20A
8.8
Source-Drain Characteristics
④
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=10A, V
GS
=0V
–
–
–
0.8
50.8
40
1.1
V
t
rr
–
–
nS
nC
I
F
=10A, V
R
=50V
dl
F
/dt=100A/
s
Q
rr
Note
④：
Pulse test (pulse width
300us, duty cycle
2%).
Note Guaranteed
by design, not subject to production testing.
⑤
：
Rev.1 — 10 May 2019
2
