Slkor-SLKORMICRO-Elec–SL6800C
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SL6800C
N-Channel Power Mosfet
Product Summary
30
V
V
DS
90
2
mΩ
A
R
DS(ON)
@10V,MAX
D2
S1
I
D
D1
G2
S2
G1
FEATURES
•
Dual N-Channel
•
TrenchFET Power MOSFET
•
Low Gate Charge
•
Low On-resistance
•
Surface Mount Package
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
Symbol
Rating
Unit
Gate-Source Voltage
V
GS
V
(br)DSS
T
J
±20
V
V
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
30
150
°C
°C
A
T
STG
I
S
-50 to 155
2
Tc=25°C
Mounted on Large Heat Sink
Pulse Drain Current Tested
I
DM
Tc=25°C
Tc=25°C
8.4
A
Continuous Drain Current@GS=10V
Maximum Power Dissipation
I
D
2
A
W
P
D
R
θJA
Tc=25°C
1.1
114
Thermal Resistance Junction-Ambient((*1 in2 Pad of 2-oz Copper), Max.)
°C/W
1
SL6800C
Electrical Characteristics (TJ=25
℃
unless otherwise noted)
Symbol Parameter
Condition Min
Typ Max
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Unit
BV
(BR)DSS
Drain-Source Breakdown Voltage
V
GS=0V ID=250μA
30
—
—
V
uA
nA
V
I
DSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
—
—
1
VDS=30V
，
VGS=0V
VGS=±20V
，
VDS=0V
VDS=VGS
，
ID=250μA
VGS=10V
，
ID=2A
VGS=4.5V
，
ID=1A
I
GSS
—
—
±100
1.5
90
V
GS(th)
0.5
—
0.9
70
76
R
DS(on)
Drain-Source On-State Resistance
mΩ
—
106
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
C
ISS
Input Capacitance
—
—
—
176
22.3
14.3
—
—
—
pF
pF
pF
VDS=15V
，
VGS=0V
，
f=1MHz
C
OSS
C
RSS
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
—
—
—
—
—
—
—
1.5
0.3
0.5
9
—
—
—
—
—
—
—
nC
nC
nC
nS
nS
nS
nS
VDS=15V
，
ID=1A
，
VGS=4.5V
35
16
8
VDD=15V
，
ID=2A
，
VGS=4.5V
，
RG=3Ω
t
d(off)
t
f
Source- Drain Diode Characteristics
Forward on voltage
—
0.86
1.2
V
Tj=25
℃，
Is=2A
，
V
SD
2
SL6800C
Typical Operating Characteristics
5
4
3
2
1
0
5
10.0V
4.5V
2.5V
4
125
°
C
2V
3
2
1
0
25
°
C
1.5V
0.00
0.50
1.00
1.50
2.00
2.50
3.00
0
0.5
1
1.5
2
2.5
VGS, Gate -Source Voltage (V)
Fig2. Typical Transfer Characteristic
VDS, Drain -Source Voltage (V)
Fig1. Typical Output Characteristics
2.5
2
120
100
80
VGS=2.5V
VGS=4.5V
1.5
1
VGS=10V
60
VGS=10V
40
0.5
20
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj – Junction Temperature (°C)
Fig3. Normalized On-Resistance Vs. Temperature
ID, Drain-Source Current (A)
Fig4. On-Resistance Vs. Drain-Source Current
500
400
300
200
100
0
5
4
3
V
DS
=15V
I
D
=1A
2
1
0
Coss
Crss
0
5
10
15
20
25
0
0.3
0.6
0.9
1.2
1.5
Qg -Total Gate Charge (nC)
Fig5. Typical Gate Charge Vs.Gate-Source Voltage
VDS , Drain-Source Voltage (V)
Fig6 Typical Capacitance Vs.Drain-Source
3
SL6800C
50
40
30
20
10
0
100
10
Single Pluse
TA=25
°
C ,TJ(MAX)=150
°
C
Limit by R
DS(ON)
100us
1ms
1
10ms
0.1
0.01
100ms
DC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, Drain -Source Voltage (V)
Fig7. Maximum Safe Operating Area
Pulse Width (s)
Fig8. Typical Single Puls Power Rating Juntion-
4
