Slkor-SLKORMICRO-Elec–SL9435A
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SL9435A
Product Summary
Features
•
Trench Power MV MOSFET technology
•
Excellent package for heat dissipation
•
High density cell design for low R
DS(ON)
V
DS
R
DS(ON)
MAX
I
D
MAX
60mΩ@10V
-30V
-5A
90mΩ@4.5V
D
D
D
D
Application
•
DC-DC Converters
•
Power management functions
S
S
S
G
D
D
D
D
SOP-8 top view
Schematic diagram
9435A : Device code
XXXXXX : Code
9435A
XXXXXX
G
S
S
S
Marking and pin assignment
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
Drain-Source Breakdown Voltage
-30
±20
V
V
V
DS
Gate-Source Voltage
V
GS
Maximum Junction Temperature
150
°C
°C
A
T
J
Storage Temperature Range
-50 to 155
-5
T
STG
Diode Continuous Forward Current
T
c
=25°C
I
S
Mounted on Large Heat Sink
Pulse Drain Current Tested
T
c
=25°C
-20
-5
A
A
I
DM
Continuous Drain Current@GS=10V
T
c
=25°C
T
c
=25°C
I
D
Maximum Power Dissipation
2.5
50
W
P
D
Thermal Resistance Junction-Ambient((*1 in2 Pad of 2-oz Copper), Max.)
°C/W
R
θJA
1
SL9435A
Electrical Characteristics (TJ=25
℃
unless otherwise noted)
Symbol Parameter
Condition
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Min
Typ Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
VGS=0V
，
ID=-250μA
VDS=-30V
，
VGS=0V
VGS=±20V
，
VDS=0V
VDS=VGS
，
ID=-250μA
VGS=-10V
，
ID=-4.6A
VGS=-4.5V
，
ID=-4.1A
-30
—
—
—
-1
V
uA
nA
V
BV
(BR)DSS
—
I
DSS
—
—
±100
-2.5
60
I
GSS
-1
—
-1.5
45
60
V
GS(th)
Drain-Source On-State Resistance
mΩ
R
DS(on)
—
90
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Input Capacitance
—
—
—
770
440
123
—
—
—
pF
pF
pF
C
I
SS
VDS=-15V
，
VGS=0V
，
f=1MHz
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Switching Characteristics
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
—
—
—
—
—
—
—
30
2.7
6.9
9
—
—
—
—
—
—
—
nC
nC
nC
nS
nS
nS
nS
Q
g
VDS=-15V
，
ID=-4.2A
，
VGS=-10V
Q
gs
Q
gd
t
d(on)
t
r
16
77
40
VDS=-15V
，
ID=-1A
，
VGS=-10V
，
RG=3Ω
t
d(off)
t
f
Source- Drain Diode Characteristics
Forward on
v
o
ltage
Tj=25
℃，
Is=-5A
，
—
—
-1.2
V
V
SD
2
SL9435A
Typical Operating Characteristics
Qg -Total Gate Charge (nC)
-VDS, Drain -Source Voltage (V)
Fig2. Typical Gate Charge Vs.Gate-Source Voltage
Fig1. Typical Output Characteristics
Tj – Junction Temperature (°C)
– ID, Drain-Source Current (A)
Fig3. Normalized On-Resistance Vs. Temperature
Fig4. On-Resistance Vs. Drain-Source Current
-VDS, Drain -Source Voltage (V)
-VDS , Drain-Source Voltage (V)
Fig7. Maximum Safe Operating Area
Fig6 Typical Capacitance Vs.Drain-Source Voltage
3
