Slkor-SLKORMICRO-Elec–SS8050
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SS8050
NPN General Purpose Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
MAXIMUM RATINGS
(T =25˚C
unless otherwise noted)
A
Rating
Symbol
V
a
lue
Unit
V
CBO
CEO
40
25
Collector-Base Voltage
V
V
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
EBO
5
V
A
Collector Current-Continuous
I
C
1.5
Total Device Dissipation T
=25°C
P
W
°C
A
1.0
D
T ,T
Junction and Storage, Temperature
-55 to +150
J
stg
ELECTRICAL CHARACTERISTICS
(T =25˚C
unless otherwise noted)
A
Characteristics
Symbol
Unit
Max
Min
40
Typ
Collector-Base Breakdown Voltage
I =100µA,
I =0
V
–
–
V
V
–
–
(BR)CBO
C
E
Collector-Emitter Breakdown Voltage
I =0.1mA,
I =0
V
25
(BR)CEO
C
B
Emitter Base Breakdown Voltage
I =100µA,
I =0
V
5
–
–
–
–
–
V
(BR)EBO
E
C
Collector cut-off current
=40V, I
=0
µA
I
0.1
0.1
CBO
V
CB
E
Emitter cut-off current
=20V, I
=0
µA
µA
–
I
CEO
EBO
V
CE
E
Emitter cut-off current
=5V, I
=0
I
–
–
0.1
V
EB
C
1
SS8050
ON CHARACTERISTICS
DC Current Gain
(1)
(2)
h
FE
h
FE
400
–
V
CE
V
CE
=1V, I
=100mA
85
40
–
C
–
=1V, I
=800 mA
C
Collector-Emitter Saturation Voltage
I =800mA,
I =80mA
V
–
–
–
–
V
V
0.5
CE(sat)
BE(sat)
C
B
Base-Emitter Saturation Voltage
I =800mA,
I =80mA
V
1.2
1
C
B
Base-Emitter ON Voltage
=1V, I
=10mA)
V
–
–
V
BE(ON)
V
CE
C
DYNAMIC CHARACTERISTICS
Transition frequency
CE
–
f
T
MHz
100
–
V
=10 V, I
=50 mA, f=30MHz
C
CLASSIFICATION OF h
FE(2)
Rank
B
C
D
E
Range
85-160
120-200
160-300
300-400
2
SS8050
1000
100
10
0.5
0.4
0.3
0.2
0.1
V
CE
=
1
V
I
3.0
m
A
B=
I
B=
2.5
m
A
2.0
m
A
I
B=
I
1.5
m
A
1.0
m
A
0.5
m
A
B=
I
B=
I
B=
1
0
0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
1000
(mA)
I
C
, CO
L
L
E
CTOR CURRENT
(
V
o
L
T
S)
V
CE
,
C
O
L
L
E
CTOR-EMI
T
T
ER VO
L
TAGE
FIG.1 Static Characteristic
FIG.2 DC Current Gain
10000
1000
100
100
10
I
C
=10 I
B
V
CE
=
1
V
V
BE
(sat)
1
0
V
CE
(sat)
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
I
C
, COL
L
E
CTOR CURRENT
(mA)
(
V
o
L
T
S)
V
BE
, BASE
–
E
M
I
T
T
ER VOLTAGE
FIG.3 Base-Emitter On
V
o
ltage
FIG.4 Base-Emitter Saturation
V
o
ltage
Collector-Emitter Saturation Voltage
1000
100
10
1000
100
V
CE
=
1
0V
f=1.0 MHz
I
E
=0
10
1
1
1
10
100
400
10
100
V
,COLLECTOR-BASE VOLTAGE(V)
I ,COLLECTORN
CURRENT
CE
C
FIG.6 Collector Output Capacitance
FIG.5 Current Gain Bandwidth Product
3
SS8050
TO-92 Outline Dimensions
unit:mm
E
TO-92
Dim
A
B
C
D
E
G
H
J
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
3.70
1.40
0.55
0.51
4.70
–
C
4.70
J
1.270TYP
K
K
2.44
2.64
14.50
L
14.10
G
4
