Slkor-SLKORMICRO-Elec–SS8550

SS8550  

PNP Silicon  

Plastic-Encapsulate Transistors  

TO-92  

COLLECTOR  

3

2

BASE  

1

2

3

1. EMITTER  

2. BASE  

1

EMITTER  

3. COLLECTOR  

ABSOLUTE MAXIMUM RATINGS  

(

T

a

=25 C)  

SS8550  

Rating  

Collector-Emitter Voltage  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

Symbol  

Unit  

Vdc  

Vdc  

Vdc  

Adc  

V

-25  

-40  

CEO  

V

CBO  

V

-5.0  

-1.5  

EBO  

I

C

Total Device Dissipation T

 

=25 C  

P

W

1.0  

A

D

150  

Junction Temperature  

Storage Temperature  

T

j

C

C

-55 to +150  

Tstg  

ELECTRICAL CHARACTERISTICS  

Characteristics  

Symbol  

Min  

Max  

Unit  

Collector-Emitter Breakdown Voltage

(1)

(I =

 

-0.1 mAdc, I

 

=0)  

–

V

V

V

-25  

Vdc  

C

B

(BR)CEO  

(BR)CBO  

(BR)EBO  

–

-40  

Vdc  

Vdc  

Collector-Base Breakdown Voltage (I

 

= -100 uAdc, I

 

=0)  

C

E

–

-5.0  

Emitter-Base Breakdown Voltage (I

 

= -100 uAdc, I

 

=0)  

E

C

-0.1  

-0.1  

–

–

I

uAdc  

uAdc  

Collector Cutoff Current (V

 

= -40 Vdc, I

 

=0 Vdc)  

CBO  

CB  

E

I

Emitter Cutoff Current(V

 

= -5 Vdc, I

 

=0 Vdc)  

EBO  

C

EB  

<

<

1. Pulse Test: Pulse Width

 

300 us, Duty Cycle

 

2.0%  

1

SS8550  

ELECTRICAL CHARACTERISTICS

(T =25

 

C unless otherwise noted) (Countinued)  

A

Max  

Characteristics  

Symbol  

Min  

TYP  

Unit  

ON CHARACTERISTICS  

DC Current Gain  

(I =

 

-100 mAdc

,

V  

C

–

–

h

–

–

85  

40  

400  

–

FE(1)  

)

CE=-1.0 Vdc  

DC Current Gain  

h

FE(2)  

(I =

 

-800 mAdc

,

V

 

=

–

1.0 Vdc)  

C

CE  

Collector-Emitter Saturation Voltage  

V

-0.5  

–

Vdc  

CE(sat)  

–

–

–

(I =

 

-800 mAdc, I

 

= -80 mAdc)  

C

B

Base-Emitter Saturation Voltage  

(I =

 

-800 mAdc, I

 

= -80 mAdc)  

V

–

BE(sat)  

-1.2  

Vdc  

C

B

Transition Frequency  

100  

f

T

–

MHz  

(V =-10V,

 

I =-50mA,

 

f=30 MHz)  

C

CE  

Classification of h  

FE(1)  

E

B

D

Rank  

C

300-400  

Range  

120-200  

160-300  

85-160  

2

SS8550  

1000  

100  

10  

-0.5  

-0.4  

-0.3  

-0.2  

-0.1  

V

CE

= -1V  

I

B

=-4.0mA  

I

B

=-3.5mA  

I

B

=-3.0mA  

I

B

=-2.5mA  

I

B

=-2.0mA  

I

B

=-1.5mA  

I

B

=-1.0mA  

I

B

=-0.5mA  

1

-0.1  

-0.4  

-0.8  

-1.2  

-1.6  

-2.0  

-1  

-10  

-100  

-1000  

I

C

[mA], COLLECTOR CURRENT  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

FIG.1 Static Characteristic  

FIG.2 DC Current Gain  

-100  

-10000  

-1000  

-100  

V

CE

= -1V  

I

C

=10I

B  

-10  

V

BE(sat)  

-1  

V

CE(sat)  

-0.1  

-0.0  

-0.2  

-0.4  

-0.6  

-0.8  

-1.0  

-1.2  

-10  

-0.1  

-1  

-10  

-100  

-1000  

V

BE

[V], BASE-EMITTER VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

FIG.4 Base-Emitter On

V

o

ltage  

FIG.3 Base-Emitter Saturation

V

o

ltage  

Collector-Emitter Saturation Voltage  

100  

1000  

f=1MHz  

I

E

=0  

V

CE

=-10V  

10  

100  

1

10  

-1  

-10  

-100  

-1000  

-1  

-10  

-100  

-1000  

V

CB

[V], COLLECTOR-BASE VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

FIG.5 Collector Output Capacitance  

FIG.6 Current Gain Bandwidth Product  

3

SS8550  

TO-92 Outline Dimensions  

unit:mm  

E

TO-92  

Dim  

A

B

C

D

Min  

3.30  

1.10  

0.38  

0.36  

4.40  

3.43  

4.30  

Max  

3.70  

1.40  

0.55  

0.51  

4.70  

–

C

E

G

H

J

4.70  

J

1.270TYP  

K

K

L

2.44  

14.10  

2.64  

14.50  

G

4