SMC-Sangdest-Microelectronicstronic–Nanjing-S2M0080120J
| Part # | SMC-Sangdest-Microelectronicstronic–Nanjing-S2M0080120J |
Download  | SMC-Sangdest-Microelectronicstronic–Nanjing-S2M0080120J |
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
S2M0080120J
1200V SIC POWER MOSFET
Description
S2M0080120J is single SiC Power MOSFET packaged in
TO-263-7 case.
The device is a high voltage n-channel
enhancement mode MOSFET that has very low total
conduction losses and very stable switching
V
DS
= 1200 V
I
DS
= 37 A
characteristics over temperature extremes. The
S2M0080120J is ideal for energy sensitive, high
frequency applications in challenging environments.
R
DS
(on) = 77 m
Ω
Features
Circuit Diagram
•
Positive temperature characteristics, easy to parallel.
•
Low on-resistance Typ. RDS(on) = 77m
Ω
.
•
Fast switching speed and low switching losses.
•
Very fast and robust intrinsic body diode.
•
Process of non-bright Tin electroplatin
Applications
•
EV Fast Charging Modules
•
EV On Board Chargers
•
Solar Inverters
•
Online UPS/Industrial UPS
•
SMPS (Switch Mode Power Supplies)
•
DC-DC Converters
•
ESS (Energy Storage Systems)
Maximum Ratings(T=25
℃
unless otherwise specified)
Characteristics
Drain Source Voltage
Gate Source Voltage
Gate Source Voltage
Sym
Condition
Max.
1200
Units
bol
V
DSS
V
V
V
V
GS
= 0V, I
DS
= 100uA, T
j
= 25
C
V
GSS
– 10 to +25
-5 to +20
T
j
= 25
C, Absolute maximum values, AC (f>1Hz)
T
j
= 25
C Recommended Operational Values
V
GSOP
Continuous Drain Current
I
D
I
D
37
26
A
A
V
GS
= 20V,
T
j
= 25
C
V
GS
= 20V,
T
j
= 100
C
Pulse width t
P
limited by T
jmax
T
C
=25˚C, T
J
= 175 ˚C
Pulsed Drain Current
Power Dissipation
I
D,pulse
P
D
82
A
234
W
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
Electrical Characteristics(T=25
℃
unless otherwise specified)
Unit
Characteristics
Symbol
Condition
V
GS
= 0V, I
D
= 1mA
Min.
Typ.
Max.
s
Drain Source Breakdown Voltage
V
(BR)DSS
1200
2.0
V
V
DS
= V
GS
, I
D
= 10mA
2.8
1.8
0.1
1
4.0
1.0
V
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 10mA, T
J
= 175
C
V
DS
= 1200V, V
GS
= 0V
I
DSS
I
DSS
I
GSS+
I
GSS-
uA
uA
nA
nA
mΩ
mΩ
S
Zero Gate Voltage Drain Current
Gate Source Leakage Current
V
DS
= 1200V, V
GS
= 0V, T
J
= 175
C
V
GS
= 20V, V
DS
= 0V
V
GS
= -5V, V
DS
= 0V
V
GS
= 20V, I
D
= 20A
V
GS
= 20V, I
D
= 20A, T
J
= 175
C
V
DS
= 20 V, I
D
= 20 A
V
DS
= 20 V, I
D
= 20 A,
T
J
= 175
C
V
GS
= 0V,
10
100
-100
100
-10
77
Drain Source On-State
Resistance
R
DS(on)
137
10.5
Transconductance
Input Capacitance
gfs
8
S
1324
C
ISS
C
OSS
C
RSS
E
OSS
E
ON
E
OFF
t
d(on)
t
r
74
3.4
37
V
DS
= 1000V
Output Capacitance
Reverse Transfer Capacitance
C
OSS
Stored Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Rise Time
pF
V
AC
= 25mV
f = 200kHz
uJ
uJ
V
DS
= 800V, V
GS
= -5/20V
I
D
= 20A, R
G(ext)
= 2.5Ω
290
20
20
V
DS
= 800V, V
GS
= -5/20V
I
D
= 20A, R
G(ext)
= 2.5Ω, L=975uH
FWD=S2M0080120K
11
20
7.8
3.3
23
14
54
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
R
G(int)
Q
gs
f = 1MHz, VAC = 25 mV, D-S short
V
DS
= 800V, V
GS
= -5/20V
I
D
= 20A
Ω
Q
gd
Q
g
nC
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
Reverse Diode Characteristics:
Characteristics
Symbol
Condition
V
GS
= -5V, I
SD
= 10A
Typ.
Max.
Units
4.0
Diode Forward Voltage
V
SD
V
V
V
GS
= -5V, I
SD
= 10A, T
J
= 175°C
3.5
V
SD
I
S
Continuous Diode Forward Current
Reverse Recovery Time
41
V
GS
= -5V, T
C
= 25
℃
A
t
rr
25
102
6.7
V
GS
= -5V, I
SD
= 20A, T
J
= 25°C
V
R
= 800V
ns
Reverse Recovery Charge
Q
rr
I
mm
nC
A
Peak Reverse
Recovery Current
dif/dt= 1950A/µs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Symbol
T
J
Condition
Specification Units
–
-55 to +175
-55 to +175
0.64
C
C
Storage Temperature
T
stg
–
Typical Thermal Resistance Junction to Case
DC operation
R
JC
C/W
Ordering Information:
Device
Package
TO-263-7
Shipping
S2M0080120J
800pcs/reel
Marking Diagram
Where XXXXX is YYWWL
S2M
0080
120
J
= Device Type
= R
DS
(on)
= Reverse Voltage (1200V)
= Package
SSG
YY
= SSG
= Year
WW
L
= Week
= Lot Number
Cautions
：
Molding resin
Epoxy resin UL:94V-0
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
Ratings and Characteristics Curves
Figure 2. Output Characteristics T
J
= 25
º
C
Figure 1. Output Characteristics T
J
= -55
º
C
Figure 3. Output Characteristics T
J
= 175
º
C
Figure 4. Normalized On-Resistance vs. Temperature
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
Figure 8. Body Diode Characteristic at T
J
= -55
º
C
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 9. Body Diode Characteristic at T
J
= 25
º
C
Figure 10. Body Diode Characteristic at T
J
= 175
º
C
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristic
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
Figure 14. 3rd Quadrant Characteristic at T
J
= 25
º
C
Figure 13. 3rd Quadrant Characteristic at T
J
= -55
º
C
Figure 16. Output Capacitor Stored Energy
Figure 15. 3rd Quadrant Characteristic at T
J
= 175
º
C
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 1000V)
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
Figure 19. Continuous Drain Current Derating vs.
Figure 20. Maximum Power Dissipation Derating vs. Case
Temperature
Case Temperature
Figure 21. Transient Thermal Impedance (Junction – Case)
Figure 22. Safe Operating Area
Figure 24. Clamped Inductive Switching Energy vs. Drain
Current (V
DD
= 800V)
Figure 23. Clamped Inductive Switching Energy vs. Drain
Current (V
DD
= 600V)
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 28. Switching Times Definition
Figure 27. Switching Times vs. R
G(ext)
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
Mechanical Dimensions TO-263-7
Millimeters
SYMBOL
MIN.
TYP.
MAX.
D
E
A
9.025
10.13
4.30
9.075
10.18
4.435
9.230
10.23
4.57
H
15.000
4.65
6.50
16.178
6.60
7.55
7.233
7.00 REF
2.605
17.313
6.70
8.60
D1
E1
E2
D4
D5
A1
A2
e
6.778
7.655
1.900
0
–
0.125
0.25
2.595 REF
1.27 TYP
2.512
L
b
2.324
0.50
2.70
0.70
0.60
L1
b2
C2
c
0.968
0.60
1.17
1.418
0.80
1.27
0.381
1.868
1.00
1.40
0.201
0.600
R
R1
P
0.506 REF
0.50 REF
ø1.60 REF
1
°
θ
0
°
3
°
3
°
3
°
4
°
7
°
7
°
7
°
Θ1
Θ2
Θ3
5.5
°
5
°
5
°
China – Germany – Korea – Singapore – United
States
S2M0080120J
Technical Data
Data Sheet N2527, REV.-
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall
SMC Diode Solutions
be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s).
SMC Diode Solution
assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall
SMC Diode Solutions
be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or
SMC Diode Solutions
.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC
Diode Solutions
.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
China – Germany – Korea – Singapore – United
States
