SMC-Sangdest-Microelectronicstronic–Nanjing-SCT151B-650R

SCT151K -650R  

SCT151K -800R  

SCT151C-650R  

Technical Data  

Data Sheet N2049, Rev.-  

SCT151 Series

 

12A SCRs  

Circuit Diagram  

A(2)  

K(1)  

G(3)  

DPAK  

TO-220C  

Description  

With high ability to withstand the shock loading of large current, SCT151 series of silicon controlled rectifiers provide  

high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on  

solid state relay, motorcycle, power charger, T-tools etc.  

Maximum Ratings:  

Characteristics  

Symbol  

T

stg  

Condition  

Max.  

-40-150  

-40-125  

650/800  

Units  

℃

–

Storage junction temperature range  

Operating junction temperature range  

Repetitive peak off-state voltage(T

j

=25

℃

)  

–

–

–

T

j  

℃

V

DRM  

V

Repetitive peak reverse voltage(T

j

=25

℃

)  

V

RRM  

650/800  

12  

V

A

RMS on-state current  

DPAK(T

C

=98

℃

)  

I

(TRMS)  

TO-220C(T

C

=100

℃

)  

Non repetitive surge peak on-state current  

(tp=10ms)  

I

2

t value for fusing (tp=10ms)  

–

I

TSM  

I

2

t  

120  

72  

A

A

2

s  

A/μs  

–

–

Repetitive rate of rise of on-state current  

dI

T

/dt  

50  

(I

G

=2

×

I

GT  

)

Peak gate current  

I

GM  

P

GM  

–

–

2

5

A

Peak gate power  

W

W

–

Average gate power dissipation  

P

G(AV)  

0.5  

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States

  



  

SCT151K -650R  

SCT151K -800R  

SCT151C-650R  

Technical Data  

Data Sheet N2049, Rev.-  

Electrical Characteristics

(Tj=25

℃

unless otherwise specified)  

Value  

TYP.  

Symbol  

Test Condition  

Unit  

MIN.  

MAX.  

I

GT  

V

GT  

V

GD  

I

L  

–

4

0.75  

–

15  

1.5  

–

mA  

V

V

D

=12V R

L

=33Ω  

–

0.2  

–

V

D

=V

DRM

T

j

=125

℃

R

L

=3.3KΩ  

I

G

=1.2I

GT  

V

12  

40  

30  

–

mA  

mA  

V/μs  

I

H  

I

T

=500mA  

–

12  

dV/dt  

V

D

=2/3V

DRM

Gate Open T

j

=125

℃  

200  

400  

Static Characteristics  

Symbol  

Condition  

Max.  

Units  

V

V

TM  

I

DRM  

I

RRM  

I

T

=23A tp=380μs,Tj=25

℃  

1.6  

10  

1

V

D

=V

DRM

V

R

=V

RRM

, Tj=25

℃  

V

D

=V

DRM

V

R

=V

RRM

, Tj=125

℃  

μA  

mA  

Thermal Resistances  

Symbol  

Condition  

DPAK  

TO-220C  

Value  

1.4  

Units  

Rth(j-c)  

Junction to case(AC)  

℃

/W  

1.3  

Ordering Information  

S CT

 

151 C -650R  

SMC Diode Solutions  

SCRs  

I

T(RMS)

:12A  

650R:V

DRM

/V

RRM

≥ 650V  

800R:V

DRM

/V

RRM

≥ 800V  

C:TO-220C  

K:DPAK  

Device  

Package  

TO-220C  

DPAK  

Shipping  

50pcs/ Tube  

2500pcs/ Reel  

2500pcs/ Reel  

SCT151C-650R  

SCT151K -650R/800R  

SCT151K -650R/800RTR  

DPAK  



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States

  



  

SCT151K -650R  

SCT151K -800R  

SCT151C-650R  

Technical Data  

Data Sheet N2049, Rev.-  

Marking Diagram  

Where XXXXX is YYWWL  

SCT151C-650R =

 

Part name  

SCT151K-650R =

 

Part name  

YY  

WW  

L

= Year  

= Week  

= Lot Number  

Mechanical Dimensions TO-220C  

Millimeters  

Inches  

Typ.  

SYMBOL  

Min.  

Typ.  

Max.  

Min.  

Max.  

A

B

C

C2  

C3  

4.40  

0.70  

0.45  

1.23  

2.20  

4.60  

0.90  

0.60  

1.32  

2.60  

0.173  

0.028  

0.018  

0.048  

0.087  

0.181  

0.035  

0.024  

0.052  

0.102  

D

8.90  

9.90  

0.350  

0.390  

E

F

9.90  

6.30  

10.3  

6.90  

0.39  

0.248  

0.406  

0.272  

G

H

2.54  

3.39  

0.1  

28.0  

29.8  

1.102  

1.173  

L1  

L2  

L3  

0.133  

1.14  

2.65  

1.70  

2.95  

0.045  

0.104  

0.067  

0.116  

ϕ

3.6  

0.142  

Mechanical Dimensions DPAK  

Millimeters  

Typ.  

Inches  

Typ.  

SYMBOL  

Min.  

Max.  

Min.  

Max.  

A

A2  

B

2.10  

0

2.50  

0.10  

0.86  

5.48  

0.60  

0.58  

0.083  

0

0.098  

0.004  

0.034  

0.216  

0.024  

0.023  

0.66  

5.18  

0.40  

0.44  

0.026  

0.202  

0.016  

0.017  

B2  

C

C2  

D

5.90  

6.30  

6.80  

4.67  

0.232  

0.248  

D1  

E

5.30REF  

0.209REF  

6.40  

4.63  

4.47  

9.50  

0.252  

0.182  

0.176  

0.268  

E1  

G

0.184  

0.421  

H

10.70 0.374  

L

1.09  

1.35  

1.21  

1.65  

0.043  

0.053  

0.048  

0.065  

L2  

V1  

V2  

7

°  

7

°  

0

°  

6

°  

0

°  

6

°  



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States

  



  

SCT151K -650R  

SCT151K -800R  

SCT151C-650R  

Technical Data  

Data Sheet N2049, Rev.-  

Ratings and Characteristics Curves  

FIG.1:

Maximum power dissipation versus RMS  

FIG.2:

RMS on-state current versus case  

on-state current  

temperature  

I

T(RMS)

(A)  

18  

P(w)  

20  

α=180°  

15  

15  

10  

DPAK  

12  

9

6

5

3

0

I

T(RMS)

(A)  

Tc (

℃

)  

0

0

3

6

9

12  

16  

0

25  

50  

75  

100  

125  

FIG.3:

Surge peak on-state current versus  

FIG.4:

On-state characteristics (maximum  

number of cycles  

values)  

I

TM

(A)  

I

TSM

(A)  

100  

140  

120  

100  

80  

tp=10ms  

One cycle  

Tj=Tjmax  

10  

60  

40  

Tj=25

℃

 

20  

0

V

TM

(V)  

Number of cycles  

100  

1

0

1

2

3

4

5

1

10  

1000  

FIG.5:

Non-repetitive surge peak on-state current  

for a sinusoidal pulse with width tp<10ms, and  

corresponging value of

2

I t (dI/dt < 50

A

μ

/

s

)  

FIG.6:

Relative variations of gate trigger  

current, holding current and latching current  

versus junction temperature  

2

2

I

TSM

(A), I t (A s)  

I

GT

,I

H

,I

L

(Tj)/I

GT

,I

H

,I

L

(Tj=25

℃

)  

3.0  

2.5  

2.0  

1000  

100  

10  

I

TSM  

I

GT  

dI/dt  

I

H

&I

L  

1.5  

1.0  

0.5  

0.0  

I

2

t  

Tj(

℃

)  

40 60  

tp(ms)  

-40 -20  

0

20  

80 100

 

120 140  

0.01  

0.1  

1

10  



China – Germany – Korea – Singapore – United

 

States

  



  

SCT151K -650R  

SCT151K -800R  

SCT151C-650R  

Technical Data  

Data Sheet N2049, Rev.-  

DISCLAIMER:  

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  

characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the  

datasheet(s).  

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  

medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by  

means of users’ fail-safe precautions or other arrangement .  

3- In no event shall

SMC Diode Solutions

be liable for any damages that may result from an accident or any other cause during operation  

of the user’s units according to the datasheet(s).

SMC Diode Solution

assumes no responsibility for any intellectual property claims or any  

other problems that may result from applications of information, products or circuits described in the datasheets.  

4- In no event shall

SMC Diode Solutions

be liable for any failure in a semiconductor device or any secondary damage resulting from use  

at a value exceeding the absolute maximum rating.  

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or

SMC Diode Solutions

.  

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of

SMC  

Diode Solutions

.  

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  

hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  

party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  

regulations..  

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