SMC-Sangdest-Microelectronicstronic–Nanjing-SST16A-800BW
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SST16 Series
Technical Data
Data Sheet N2102, Rev.-
SST16 Series
16A TRIACs
Circuit Diagram
TO-220A(Ins)
TO-220B(Non-Ins)
Description
With high ability to withstand the shock loading of large current, SST16 series triacs provide high dv/dt rate with
strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially
recommended for use on inductive load.
Maximum Ratings:
Characteristics
Symbol
T
stg
Condition
Max.
-40-150
-40-125
800
Units
℃
–
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage(T
j
=25
℃
)
–
–
–
–
–
T
j
℃
V
DRM
V
Repetitive peak reverse voltage(T
j
=25
℃
)
V
RRM
V
DSM
V
RSM
800
V
V
V
Non repetitive surge peak Off-state voltage
V
DRM
+100
V
RRM
+100
Non repetitive peak reverse voltage
RMS on-state current
TO-220A(Ins)(T
C
=86
℃
)
I
(TRMS)
16
A
TO-220B(Non-Ins)(T
C
=107
℃
)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
2
t value for fusing (tp=10ms)
–
I
TSM
I
2
t
160
128
50
A
A
2
s
A/μs
–
–
Critical rate of rise of on-state current
dI/dt
(I
G
=2
×
I
GT
)
Peak gate current
I
GM
P
G(AV)
P
GM
–
–
4
1
5
A
Average gate power dissipation
Peak gate power
W
W
–
China – Germany – Korea – Singapore – United
States
SST16 Series
Technical Data
Data Sheet N2102, Rev.-
Electrical Characteristics
(Tj=25
℃
unless otherwise specified)
3 Quadrants
Value
Symbol
Test Condition
Quadrant
Unit
BW
CW
I
GT
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅰ
–
Ⅱ
–
Ⅲ
MAX
MAX
50
35
mA
V
V
D
=12V R
L
=33Ω
V
GT
1.3
0.2
V
D
=V
DRM
T
j
=125
℃
R
L
=3.3KΩ
V
GD
I
L
Ⅰ
–
Ⅱ
–
Ⅲ
MIN
V
Ⅰ
–
Ⅲ
70
80
50
60
MAX
mA
I
G
=1.2I
GT
Ⅱ
I
H
I
T
=100mA
MAX
MIN
60
40
mA
dV/dt
V
D
=2/3V
DRM
Gate Open T
j
=125
℃
1000
500
V/μs
4 Quadrants
Value
Symbol
Test Condition
Quadrant
Unit
B
C
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
50
70
25
50
I
GT
MAX
mA
V
D
=12V R
L
=33Ω
V
GT
V
GD
ALL
MAX
MIN
1.5
0.2
V
V
V
D
=V
DRM
T
j
=125
℃
R
L
=3.3KΩ
ALL
Ⅰ
–
Ⅲ
–
Ⅳ
70
100
60
50
80
I
L
MAX
mA
I
G
=1.2I
GT
Ⅱ
I
H
I
T
=100mA
MAX
MIN
40
mA
dV/dt
V
D
=2/3V
DRM
Gate Open T
j
=125
℃
500
200
V/μs
Static Characteristics
Symbol
Parameter
Value(MAX)
Unit
V
TM
I
DRM
I
RRM
I
TM
=22.5A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
T
j
=25
℃
T
j
=25
℃
T
j
=125
℃
1.5
5
V
μA
mA
2
Thermal Resistances
Symbol
Condition
Value
2.1
Units
℃
/W
℃
/W
TO-220A(Ins)
TO-220B(Non-Ins)
Rth(j-c)
Junction to case(AC)
1.2
China – Germany – Korea – Singapore – United
States
SST16 Series
Technical Data
Data Sheet N2102, Rev.-
Ordering Information
S ST
16 A -800 BW
SMC Diode Solutions
Triacs
BW: I
GT1-3
≤ 50mA
CW: I
GT1-3
≤ 35mA
I
T(RMS)
:16A
800:V
DRM
/V
RRM
≥ 800V
A:
TO-220A(Ins)
B:
TO-220B(Non-Ins)
Device
Package
Shipping
50pcs/ Tube
50pcs/ Tube
TO-220A(Ins)
SST16A-800CW, SST16A-800BW
SST16B-800CW, SST16B-800BW
TO-220B(Non-Ins)
Marking Diagram
Where XXXXX is YYWWL
SST16A-800BW
= Part name
= Year
= Week
YY
WW
L
= Lot Number
Mechanical Dimensions TO-220A(Ins)
SYMBOL
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
B
4.40
0.61
0.46
1.21
2.40
4.60
0.88
0.70
1.32
2.72
0.173
0.024
0.018
0.048
0.094
0.181
0.035
0.028
0.052
0.107
C
C2
C3
D
8.60
9.70
0.339
0.382
E
F
9.60
6.55
10.4
6.95
0.378
0.258
0.409
0.274
G
H
2.54
3.75
0.1
28.0
29.8
1.102
1.173
L1
L2
L3
V1
0.148
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
45
°
45
°
China – Germany – Korea – Singapore – United
States
SST16 Series
Technical Data
Data Sheet N2102, Rev.-
Mechanical Dimensions TO-220B(Non-Ins)
SYMBOL
Millimeters
Typ.
Inches
Min.
Max.
Min.
Typ.
Max.
A
B
4.40
0.61
0.46
1.21
2.40
4.60
0.88
0.70
1.32
2.72
0.173
0.024
0.018
0.048
0.094
0.181
0.035
0.028
0.052
0.107
C
C2
C3
D
8.60
9.60
6.20
9.70
10.4
6.60
0.339
0.378
0.244
0.382
0.409
0.260
E
F
G
H
2.54
3.75
0.1
28.0
29.8
1.102
1.173
L1
L2
L3
V1
0.148
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
45
°
45
°
Ratings and Characteristics Curves
FIG.1
Maximum power dissipation versus RMS
FIG.2:
RMS on-state current versus case
on-state current
temperature
I
T(RMS)
(A)
24
P(w)
24
α=180°
20
16
20
TO-220B
(Non-Ins)
16
12
12
8
TO-220A(Ins)
8
4
0
4
I
T(RMS)
(A)
Tc (
℃
)
0
0
4
8
12
16
20
0
25
50
75
100
125
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum
number of cycles
values)
I
TM
(A)
200
I
TSM
(A)
200
160
120
t=20ms
One cycle
100
Tj=Tjmax
10
80
40
0
Tj=25
℃
V
TM
(V)
Number of cycles
10 100
1
0
1
2
3
4
5
1
1000
China – Germany – Korea – Singapore – United
States
SST16 Series
Technical Data
Data Sheet N2102, Rev.-
FIG.6:
Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
FIG.5:
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of
2
I t (dI/dt < 50
A
μ
/
s)
2
2
I
TSM
(A), I t (A s)
2000
I
GT
,I
H
,I
L
(Tj) /I
GT
,I
H
,I
L
(Tj=25
℃
)
3.0
1000
100
10
2.5
2.0
I
TSM
I
GT
I
2
t
1.5
1.0
dI/dt
I
H
&I
L
0.5
0.0
Tj (
℃
)
40 60
tp(ms)
-40 -20
0
20
80 100
120 140
0.01
0.1
1
10 20
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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall
SMC Diode Solutions
be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s).
SMC Diode Solution
assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall
SMC Diode Solutions
be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
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SMC Diode Solutions
.
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SMC
Diode Solutions
.
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States
