SPS-2SA940T1TL

2SA940T1TL  

Silicon PNP Power Transistor  

DESCRIPTION  

·

Collector-Emitter Breakdown Voltage  

: V

(BR)CEO

= -150V(Min)  

·

DC Current Gain  

: h

FE

= 40-140@ I

C

= -0.5A  

·

Complement to Type 2SC2073  

APPLICATIONS  

·

Designed for use in general purpose power amplifier ,  

vertical output applications.  

ABSOLUTE MAXIMUM RATINGS(T

a

=25

℃

)

 

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

C  

PARAMETER  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

VALUE  

-150  

-150  

-5  

UNIT  

V

V

V

Collector Current-Continuous  

-1.5  

A

Total Power Dissipation  

@ T

C

=25

℃

 

P

C  

25  

W

℃

℃

T

J  

Junction

T

emperature  

150  

Storage

T

emperature Range  

-55~150  

T

stg  

THERMAL CHARACTERISTICS  

SYMBOL  

PARAMETER  

MAX  

UNIT  

Thermal Resistance,Junction to Case  

5.0  

℃

/W  

R

th j-c  

Ordering Information  

Product  

2SA940T1TL  

Package  

TO-220  

Packaging  

Tube  

V01  

1

2SA940T1TL  

ELECTRICAL CHARACTERISTICS  

T

C

=25

℃

unless otherwise specified  

SYMBOL  

V

(BR)CEO  

V

(BR)CBO  

V

(BR)EBO  

V

CE

(sat)  

V

BE

(on)  

I

CBO  

PARAMETER  

CONDITIONS  

MIN  

-150  

-150  

-5  

TY

P

.  

MAX  

UNIT  

V

Collector-Emitter Breakdown Voltage  

Collector-Base Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Collector-Emitter Saturation Voltage  

Base-Emitter On Voltage  

I

C

= -10mA ; I

B

= 0  

I

C

= -1mA ; I

E

= 0  

V

I

E

= -1mA ; I

C

= 0  

V

I

C

= -0.5A; I

B

= -50mA  

I

C

= -0.5A ; V

CE

= -5V  

V

CB

= -120V ; I

E

= 0  

V

EB

= -5V; I

C

= 0  

-1.5  

-0.85  

-10  

V

V

Collector Cutoff Current  

μ

A  

μ

A  

I

EBO  

Emitter Cutoff Current  

-10  

h

FE  

DC Current Gain  

I

C

= -0.5A ; V

CE

= -10V  

I

C

= -0.5A;V

CE

= -10V;f

test

= 1MHz  

40  

4

140  

f

T  

Current-Gain—Bandwidth Product  

MHz  

V01  

2