SPS-SM2306SRL

SM2306  

N-Channel High Density Trench MOSFET  

◆

Features  

1

Advanced Trench Process

T

e

chnology.  

2

3

High Density Cell Design for Ultra Low On-Resistance.  

RoHS Compliant.  

PRODUCT SUMMARY  

V

DSS  

I

D

R

DS(on)

(m-ohm) Max  

37 @ VGS = 10V, ID=4.0A  

49 @ VGS = 4.5V, ID=3.5A  

30V  

4.0A  

SM2306 Pin Assignment & Symbol  

◆

Ordering Information  

Ordering Number  

Pin Assignment  

Package  

Packing  

Lead Free  

Halogen Free  

1

2

3

SM2306S

R

L  

SM2306S

R

G  

Tape Reel  

SOT-23  

G

S

D

SM2306X X

 

X  

(1) S

：

SOT-23

；  

(2) R

：

Tape Reel  

(1)Package Type  

(2)Packing Type  

(3)Lead Free  

(3) G

：

Halogen Free

；

L

：

Lead Free  

V01  

1

SM2306  

◆

Absolute Maximum Ratings

(T

A

=25

o

C, unless otherwise noted)  

Symbol  

Parameter  

Ratings  

Units  

V

V

DS  

Drain-Source Voltage  

Gate-Source Voltage  

30  

V

GS  

V

±20  

Drain Current (Continuous)

a  

Drain Current (Pulsed)

b  

I

D  

A

4

20  

I

DM  

A

P

D  

T

o

tal Power Dissipation @TA=25

o

C  

W

0.9  

T

j

, T

stg  

Operating Junction and Storage

T

e

mperature Range  

°C  

°C/W  

-55 to +150  

100  

Thermal Resistance Junction to Ambient (PCB mounted)

c  

R

θ  

JA  

a:Fused current that based on wire numbers and diameter  

b:Repetitive Rating: Pulse width limited by the maximum junction temperature  

2

c:1-in 2oz

 

Cu PCB board  

◆

Electrical Characteristics

(T

A

=25°C, unless otherwise noted)  

Symbol  

Parameter  

Conditions  

Min.  

Typ.  

Max.  

Unit  

•

•

•

•

Off Characteristics  

BV

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

V

GS

=0

V

,

I

D

=250uA  

30  

–

–

–

–

–

1

V

I

DSS  

V

DS

=30

V

,

V

GS

=0V  

V

GS

=±20

V

,

V

DS

=0V  

uA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

GS(th)  

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250uA  

V

GS

=10

V

,

I

D

=4.0A  

1

–

–

3

V

27  

35  

37  

49  

R

DS(on)  

Drain-Source On-State Resistance  

m

Ω  

–

V

GS

=4.5

V

,

I

D

=3.5A  

Dynamic Characteristics

d  

240  

C

iss  

Input Capacitance  

–

–

–

–

–

–

V

DS

=15

V

,

V

GS

=0V, f=1MHz  

pF  

C

oss  

C

rss  

110  

17  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

d  

Q

g  

T

o

tal Gate Charge  

–

–

–

–

–

–

–

4.5  

1.2  

1.7  

8

–

–

V

DS

=15V,I

D

=5.8,V

GS

=10V  

nC  

nS  

Q

gs  

Gate-Source Charge  

–

–

Q

gd  

Gate-Drain Charge  

Turn-on Delay Time  

t

d(on)  

V

DD

=15V, R

G

=6  

Ω

,  

12  

17  

8

–

–

–

t

r  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

I

D

=1A V

GEN

=10

V

,

R  

L

=15

Ω  

t

d(off)  

t

f  

•

Drain-Source Diode Characteristics  

I

S  

Maximum Diode Forward Current  

–

–

–

2.5  

1

A

V

V

SD  

Drain-Source Diode Forward Voltage  

V

GS

=0

V

,

I

S

=1A  

0.76  

Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%  

d: Guaranteed by design: not subject to production testing  

V01  

2

SM2306  

◆

Characteristics Curve  

V01  

3

SM2306  

◆

Characteristics Curve  

V01  

4