SPS-SM2610ET9RL
| Part # | SPS-SM2610ET9RL |
Download  | SPS-SM2610ET9RL |
SM2610ET9RL
N-Ch 60V Fast Switching MOSFETs
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
6.8m
Ω
ID
60V
65A
TO252 Pin Configuration
Description
The SM2610E is the high cell density trenched
N-ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
The
meet the RoHS and Green Product
SM2610E
requirement, 100% EAS guaranteed with full
function reliability approved.
Table 1.
Absolute Maximum Ratings (TA=25
℃
)
Symbol
Parameter
Value
64
Unit
V
V
V
DS
Drain-Source Voltage (
V
GS=
0V)
±20
65
V
GS
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25
℃
Drain Current (DC) at Tc=100
℃
A
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
P
D
45
A
(Note 1)
260
8
A
Drain Current-Continuous@ Current-Pulsed
Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25
℃
)
Derating Factor
V/ns
W
75
0.5
300
W/
℃
mJ
℃
Single Pulse Avalanche Energy
(Note 2)
E
AS
Operating Junction and Storage Temperature Range
-55
T
o
1
75
T
J
,T
S
T
G
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T =25
℃
,V
DD
=33V,V
G
=10V
J
1
V01
SM2610ET9RL
Table 2.
Thermal Characteristic
Symbol
Parameter
Value
Max
Unit
R
JC
Thermal Resistance,Junction-to-Case
—
2.0
℃
/W
Table 3.
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25
℃
)
Zero Gate Voltage Drain Current(Tc=125
℃
)
Gate-Body Leakage Current
V
GS
=0V I
D
=250μA
V
DS
=64V,V
GS
=0V
V
DS
=64V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=40A
64
V
μA
μA
nA
V
1
10
I
DSS
I
GSS
±100
4
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
2
Drain-Source On-State Resistance
6.8
8.2
mΩ
Dynamic Characteristics
g
FS
C
iss
C
oss
C
rss
Q
g
Forward Transconductance
V
DS
=10V,I
D
=15A
15
S
Input Capacitance
2873
252
205
56
pF
pF
pF
nC
nC
nC
V
DS
=25V,V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=50V,I
D
=40A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain Charge
10
16
Switching Times
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
14.5
24
nS
nS
nS
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
=30V,I
D
=2A,R
L
=15Ω
V
GS
=10V,R
G
=2.5Ω
45
22
Source-Drain Diode Characteristics
I
SD
I
SDM
V
SD
t
rr
Source-Drain Current(Body Diode)
65
260
0.89
22
A
A
Pulsed Source-Drain Current(Body Diode)
(Note 1)
T
J
=25
℃
,I
SD
=40A,V
GS
=0V
0.99
V
Forward On Voltage
(Note 1)
nS
nC
Reverse Recovery Time
T
J
=25
℃
,I
F
=75A
di/dt=100A/μs
(Note 1)
Q
rr
t
on
27
Reverse Recovery Charge
Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by L
S
+L
D
)
Notes 1
.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, R
G
=25Ω, Starting T =25
℃
J
2
V01
SM2610ET9RL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. Output Characteristics
Figure2. Transfer Characteristics
V
DS
Drain-Source
V
o
ltage (V)
V
GS
Gate-Source
V
oltage (V)
Figure3. BVDSS vs Junction Temperature
Figure4. ID vs Junction Temperature
T
e
mperature
（℃）
T
e
mperature
（℃）
Figure5. VGS(th) vs Junction Temperature
Figure6. Rdson Vs Junction Temperature
T
e
mperature
（℃）
3
V01
SM2610ET9RL
Figure8. Capacitance vs Vds
Figure7. Gate Charge
V
DS
Drain-Source Voltage (V)
Qg Gate Charge (nC)
Figure9. Source- Drain Diode Forward
Figure10. Safe Operation Area
Tc =
2
5
℃
V
SD
Source-Drain
V
o
ltage (V)
V
DS
Drain-Source
V
o
ltage (V)
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
4
V01
SM2610ET9RL
Test Circuit
1
）
E
AS
Test Circuits
2
）
Gate Charge Test Circuit:
3
）
Switch Time Test Circuit
：
5
V01
SM2610ET9RL
Package Mechanical Data-TO-252-4R
E
Dimensions
A
B2
Ref.
Millimeters
Typ.
Inches
C2
Typ.
Min.
2.10
0
Max.
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
2.50
0.10
0.86
5.48
0.60
0.58
6.30
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
5.30REF
0.209REF
D1
E
B
G
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
DETAIL A
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
H
V
2
L
1.65
L2
V1
V2
7°
7°
E1
L2
0°
6°
0°
6°
DETAIL A
TO-252-4R
Reel Spectification-TO-252-4R
B
Dimensions
P0
P2
T
Ref.
Millimeters
Typ.
15.90
16.00
16.10 0.626
Inches
t1
Typ.
Min.
Max.
Min.
Max.
A
A
W
E
0.630
0.634
0.069
0.073
1.65
7.40
1.40
1.40
3.90
7.90
1.90
6.85
1.75
7.50
1.50
1.50
4.00
8.00
2.00
6.90
1.85
7.60
1.60
1.60
4.10
8.10
2.10
7.00
0.065
F
0.291
0.295
0.299
K0
P1
D0
D1
P0
P1
P2
A0
B0
K0
T
0.055
0.055
0.154
0.059
0.063
0.059
0.063
0.157
0.161
A0
B B
B
5°
20
A A
0.311
0.315
0.319
0.075
0.270
0.079
0.083
0.271
0.276
10.45
10.50
10.60 0.411
0.413
0.417
2.68
0.24
0.10
2.78
2.88
0.27
0.105
0.109
0.113
0.009
0.004
0.011
t1
10P0
39.80
40.00
40.20 1.567
1.575
1.583
6
V01
