SPS-SM32314D1RL
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SM32314D1RL
30V /32A Single N
Power MOSFET
32N03D
D
N03D
N
30
8.6
13.5
32
General Description
V
V
DS
30V /32A Single N
Power MOSFET
mΩ
mΩ
A
R
DS(on),TYP@VGS=10V
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
R
DS(on),TYP@VGS=4.5
I
D
Tape and reel
infomation
Part ID
Package Type
DFN5x6
Marking
32314
100% UIS Tested
100% Rg Tested
SM32314D1RL
3000
Parameter
Maximum
Symbol
Units
V
Drain-Source Voltage
Gate-Source Voltage
30
V
DS
V
GS
20
32.0
±V
T
A
=25°C
Continuous Drain Current
A
I
D
26.0
T
A
=70°C
A
51.2
Pulsed Drain Current
B
Avalanche Current
G
I
DM
I
AR
10.2
23.6
Repetitive avalanche energy L=0.1mH
G
E
AR
mJ
W
25
T
A
=25°C
Power Dissipation
A
P
D
10
T
A
=70°C
-55 to 150
Junction and Storage Temperature Range
T
J
, T
STG
°C
Thermal Characteristics
Parameter
Symbol
R
θJA
Typ
Max
Units
°C/W
°C/W
°C/W
30
61
18
46
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
t ≤ 10s
73
29
Steady State
Steady State
R
θJL
1
V01
SM32314D1RL
STATIC PARAMETERS
Parameter
Drain-Source Breakdown
Voltage
Conditions
Symbol
Min
30
Typ
Max
Units
I
D
= -250uA, V
GS
= 0V
BV
DSS
V
1
I
DSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
uA
5
Gate-Body leakage current
Gate Threshold Voltage
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=121V
I
GSS
±100
2.3
nA
V
V
GS(th)
1.1
Min
Min
1.7
8.6
13.5
66
12.3
17.6
Static Drain-Source On-
Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
g
FS
V
SD
I
S
S
V
A
0.72
1
Maximum Body-Diode Continuous Current
32
DYNAMIC PARAMETERS
Parameter
Conditions
Symbol
Typ
Max
Units
pF
1420
1732
Input Capacitance
C
iss
150
95
184
113
2
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
C
oss
pF
C
rss
pF
Ω
R
g
SWITCHING PARAMETERS
Parameter
Conditions
Symbol
Q
g
(10V)
Q
g
4.5V)
Q
gs
Typ
Max
Units
10
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
5
2.8
4
VGS=10V, VDS=15V, ID=20A
nC
Q
gd
3.75
3
t
D(on)
t
r
VGS=10V, VDS=15V,RL=0.75Ω,
RGEN=3Ω
ns
10.5
3.375
7.5
9
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery
ns
I
F
=-8A, dI/dt=500A/µs
I
F
=18A, dI/dt=500A/µs
t
rr
Time
Body Diode Reverse Recovery
nC
Q
rr
Charge
2
V01
