SPS-SM4286T9RL
| Part # | SPS-SM4286T9RL |
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SM4286T9RL
100V /14A Single N
Power MOSFET
14N10H
H
N10H
N
100
90.0
105.0
14
General Description
V
V
DS
100V /14A Single N
Power MOSFET
mΩ
mΩ
A
R
DS(on),TYP@VGS=10V
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
R
DS(on),TYP@VGS=4.5
I
D
Tape and reel
infomation
Part ID
Package Type
TO-252
Marking
4286
100% UIS Tested
100% Rg Tested
SM4286T9RL
2500
Parameter
Maximum
Symbol
Units
V
Drain-Source Voltage
Gate-Source Voltage
100
V
DS
V
GS
20
14.0
±V
T
A
=25°C
Continuous Drain Current
A
I
D
10*
T
A
=70°C
A
22.4
Pulsed Drain Current
B
Avalanche Current
G
I
DM
I
AR
4.5
10.3
Repetitive avalanche energy L=0.1mH
G
E
AR
mJ
W
30
T
A
=25°C
Power Dissipation
A
P
D
15*
T
A
=70°C
-55 to 150
Junction and Storage Temperature Range
T
J
, T
STG
°C
Thermal Characteristics
Parameter
Symbol
R
θJA
Typ
Max
Units
°C/W
°C/W
°C/W
230
460
138
345
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
t ≤ 10s
552
220
Steady State
Steady State
R
θJL
1
V02
SM4286T9RL
STATIC PARAMETERS
Parameter
Drain-Source Breakdown
Voltage
Conditions
Symbol
Min
100
Typ
Max
Units
I
D
= -250uA, V
GS
= 0V
BV
DSS
V
1
I
DSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
uA
5
Gate-Body leakage current
Gate Threshold Voltage
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
VGS=-10V, ID=14A
VGS=4.5V, ID=14A
VDS=5V, ID=14A
IS=1A,VGS=70V
I
GSS
±100
2.9
nA
V
V
GS(th)
1.5
Min
Min
2.2
90.0
105.0
75
115.0
125.0
Static Drain-Source On-
Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
g
FS
V
SD
I
S
S
V
A
0.72
1
Maximum Body-Diode Continuous Current
14
DYNAMIC PARAMETERS
Parameter
Conditions
Symbol
Typ
Max
Units
pF
390
475
Input Capacitance
C
iss
30
3
36
3
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
C
oss
pF
C
rss
pF
Ω
0.6
R
g
SWITCHING PARAMETERS
Parameter
Conditions
Symbol
Q
g
(10V)
Q
g
4.5V)
Q
gs
Typ
Max
Units
2.8
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
1.4
0.84
1.2
7.5
6
VGS=10V, VDS=15V, ID=14A
nC
Q
gd
t
D(on)
t
r
VGS=10V, VDS=15V,RL=0.75Ω,
RGEN=3Ω
ns
21
t
D(off)
t
f
6.75
15
Turn-Off Fall Time
Body Diode Reverse Recovery
ns
I
F
=-8A, dI/dt=500A/µs
I
F
=18A, dI/dt=500A/µs
t
rr
Time
Body Diode Reverse Recovery
53
nC
Q
rr
Charge
2
V02
