SPS-SM4404BPRL
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SM4404BPRL
30V /10A Complementary NP
Power MOSFET
9N03C
C
N03C
N
30
14.0
18.0
10
General Description
V
V
DS
30V /10A Complementary NP
Power MOSFET
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
mΩ
mΩ
A
R
DS(on),TYP@VGS=10V
R
DS(on),TYP@VGS=4.5
I
D
Tape and reel
infomation
Part ID
Package Type
SOP8
Marking
4404
100% UIS Tested
100% Rg Tested
SM4404BPRL
3000
Parameter
Maximum
Symbol
Units
V
Drain-Source Voltage
Gate-Source Voltage
30
V
DS
V
GS
20
10.0
8.0
±V
T
A
=25°C
Continuous Drain Current
A
I
D
T
A
=70°C
A
16.0
3.2
Pulsed Drain Current
B
Avalanche Current
G
I
DM
I
AR
7.4
Repetitive avalanche energy L=0.1mH
G
E
AR
mJ
W
2
T
A
=25°C
Power Dissipation
A
P
D
1.3
T
A
=70°C
-55 to 150
Junction and Storage Temperature Range
T
J
, T
STG
°C
Thermal Characteristics
Parameter
Symbol
R
θJA
Typ
Max
Units
°C/W
°C/W
°C/W
70
140
42
105
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
t ≤ 10s
168
67
Steady State
Steady State
R
θJL
1
V01
SM4404BPRL
STATIC PARAMETERS
Parameter
Drain-Source Breakdown
Voltage
Conditions
Symbol
Min
30
Typ
Max
Units
I
D
= -250uA, V
GS
= 0V
BV
DSS
V
1
I
DSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
uA
5
Gate-Body leakage current
Gate Threshold Voltage
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
VGS=-10V, ID=8.5A
VGS=4.5V, ID=8.5A
VDS=5V, ID=8.5A
IS=1A,VGS=41V
I
GSS
±100
2.4
nA
V
V
GS(th)
1.2
Min
Min
1.8
14.0
18.0
46
20.0
23.4
Static Drain-Source On-
Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
g
FS
V
SD
I
S
S
V
A
0.72
1
Maximum Body-Diode Continuous Current
8.5
DYNAMIC PARAMETERS
Parameter
Conditions
Symbol
Typ
Max
Units
pF
740
902
Input Capacitance
C
iss
110
82
135
97
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
C
oss
pF
C
rss
pF
Ω
1.5
R
g
SWITCHING PARAMETERS
Parameter
Conditions
Symbol
Q
g
(10V)
Q
g
4.5V)
Q
gs
Typ
Max
Units
7.5
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
3.75
2.1
3
VGS=10V, VDS=15V, ID=8.5A
nC
Q
gd
4
t
D(on)
t
r
3.2
11.2
3.6
8
VGS=10V, VDS=15V,RL=0.75Ω,
RGEN=3Ω
ns
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery
ns
I
F
=-8A, dI/dt=500A/µs
I
F
=18A, dI/dt=500A/µs
t
rr
Time
Body Diode Reverse Recovery
18
nC
Q
rr
Charge
2
V01
