SPS-SM4614BPRL
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SM4614BPRL
-40V /-6A Single P
Power MOSFET
6P04C
C
P04C
P
-40
44.1
69.3
-6
General Description
V
V
DS
-40V /-6A Single P
Power MOSFET
mΩ
mΩ
A
R
DS(on),TYP@VGS=10V
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
R
DS(on),TYP@VGS=4.5
I
D
Tape and reel
infomation
Part ID
Package Type
SOP8
Marking
4614
100% UIS Tested
100% Rg Tested
SM4614BPRL
3000
Parameter
Maximum
Symbol
Units
V
Drain-Source Voltage
Gate-Source Voltage
-40
V
DS
V
GS
20
-6.0
±V
T
A
=25°C
Continuous Drain Current
A
I
D
-5.0
T
A
=70°C
A
-9.6
Pulsed Drain Current
B
Avalanche Current
G
I
DM
I
AR
-1.9
-4.4
Repetitive avalanche energy L=0.1mH
G
E
AR
mJ
W
3.1
T
A
=25°C
Power Dissipation
A
P
D
2
T
A
=70°C
-55 to 150
Junction and Storage Temperature Range
T
J
, T
STG
°C
Thermal Characteristics
Parameter
Symbol
R
θJA
Typ
Max
Units
°C/W
°C/W
°C/W
157
315
94
236
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
t ≤ 10s
378
151
Steady State
Steady State
R
θJL
1
V01
SM4614BPRL
STATIC PARAMETERS
Parameter
Drain-Source Breakdown
Voltage
Conditions
Symbol
Min
-40
Typ
Max
Units
I
D
= -250uA, V
GS
= 0V
BV
DSS
V
-1
I
DSS
Zero Gate Voltage Drain Current
VDS=-40V, VGS=0V
uA
-5
Gate-Body leakage current
Gate Threshold Voltage
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-6A
VDS=-5V, ID=-6A
IS=-1A,VGS=0V
I
GSS
±100
-2.6
63.0
90.1
nA
V
V
GS(th)
-1.3
Min
Min
-2
44.1
69.3
46
Static Drain-Source On-
Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
g
FS
V
SD
I
S
S
V
A
-0.72
-1
-6
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Parameter
Conditions
Symbol
Typ
Max
Units
pF
940
1146
Input Capacitance
C
iss
97
72
119
85
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
C
oss
pF
C
rss
pF
Ω
2.15
R
g
SWITCHING PARAMETERS
Parameter
Conditions
Symbol
Q
g
(10V)
Q
g
4.5V)
Q
gs
Typ
Max
Units
8.4
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
4.2
3.01
4.3
VGS=-10V, VDS=-15V, ID=-6A
nC
Q
gd
8.5
t
D(on)
t
r
6.8
VGS=-10V, VDS=-15V,RL=0.75
ns
Ω, RGEN=3Ω
23.8
7.65
17
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery
ns
I
F
=-8A, dI/dt=500A/µs
I
F
=18A, dI/dt=500A/µs
t
rr
Time
Body Diode Reverse Recovery
11.5
nC
Q
rr
Charge
2
V01
