SPS-SM480T9RL
| Part # | SPS-SM480T9RL |
Download  | SPS-SM480T9RL |
SM480T9RL
30V /25A Single N
Power MOSFET
25N03H
H
N03H
N
30
23.1
36.3
25
General Description
V
V
DS
30V /25A Single N
Power MOSFET
mΩ
mΩ
A
R
DS(on),TYP@VGS=10V
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
R
DS(on),TYP@VGS=4.5
I
D
Tape and reel
infomation
Part ID
Package Type
TO-252
Marking
25N03
100% UIS Tested
100% Rg Tested
SM480T9RL
2500
Parameter
Maximum
Symbol
Units
V
Drain-Source Voltage
Gate-Source Voltage
30
V
DS
V
GS
20
25.0
±V
T
A
=25°C
Continuous Drain Current
A
I
D
18.0
T
A
=70°C
A
40.0
Pulsed Drain Current
B
Avalanche Current
G
I
DM
I
AR
8.0
18.4
Repetitive avalanche energy L=0.1mH
G
E
AR
mJ
W
21
T
A
=25°C
Power Dissipation
A
P
D
11
T
A
=70°C
-55 to 150
Junction and Storage Temperature Range
T
J
, T
STG
°C
Thermal Characteristics
Parameter
Symbol
R
θJA
Typ
Max
Units
°C/W
°C/W
°C/W
82
165
49
123
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
t ≤ 10s
198
79
Steady State
Steady State
R
θJL
1
V01
SM480T9RL
STATIC PARAMETERS
Parameter
Drain-Source Breakdown
Voltage
Conditions
Symbol
Min
30
Typ
Max
Units
I
D
= -250uA, V
GS
= 0V
BV
DSS
V
1
I
DSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
uA
5
Gate-Body leakage current
Gate Threshold Voltage
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=102V
I
GSS
±100
2.6
nA
V
V
GS(th)
1.3
Min
Min
2
23.1
36.3
47
33.0
47.2
Static Drain-Source On-
Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
g
FS
V
SD
I
S
S
V
A
0.72
1
Maximum Body-Diode Continuous Current
25
DYNAMIC PARAMETERS
Parameter
Conditions
Symbol
Typ
Max
Units
pF
373
455
Input Capacitance
C
iss
67
41
82
48
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
C
oss
pF
C
rss
pF
Ω
0.8
R
g
SWITCHING PARAMETERS
Parameter
Conditions
Symbol
Q
g
(10V)
Q
g
4.5V)
Q
gs
Typ
Max
Units
3.5
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
1.75
1.12
1.6
VGS=10V, VDS=15V, ID=20A
nC
Q
gd
5.25
4.2
t
D(on)
t
r
VGS=10V, VDS=15V,RL=0.75Ω,
RGEN=3Ω
ns
14.7
4.725
10.5
4.5
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery
ns
I
F
=-8A, dI/dt=500A/µs
I
F
=18A, dI/dt=500A/µs
t
rr
Time
Body Diode Reverse Recovery
nC
Q
rr
Charge
2
V01
