SPS-SMIRF5N65T1TL
| Part # | SPS-SMIRF5N65T1TL |
Download  | SPS-SMIRF5N65T1TL |
SMIRF5N65
N-Channel Enhancement Mode Power MOSFET
Description
I
D
5A
SMIRF5N65 is an N-channel enhancement mode
power MOS field effect transistor. The improved
planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in
the avalanche and commutation mode.
V
DSS
650V
R
dson max
2.3Ω
(
V
GS
=10V, I
=2.5A)
D
Q
g
15nC
These devices are widely used in AC-DC power
suppliers, DC/DC converters and H-bridge PWM
motor drivers.
General Features
● 5A,650V,R
DS
(on)(typ.)= 1.9ohm@V
GS
=10V
● Low Gate charge
● Low Crss
● Fast Switching
● Improved dv/dt Capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
TO-220
TO-252
TO-220F
TO-251
1
V01
SMIRF5N65
Order Information
Order Information
Marking ID
Package
Packing Type Supplied As
SMIRF5N65TBRL
SMIRF5N65T9RL
SMIRF5N65T2TL
SMIRF5N65T1TL
IRF5N65
IRF5N65
IRF5N65
IRF5N65
TO251-3L
TO252-2L
TO220F-3L
TO220-3L
2400 Units on Box
3000 Units on Reel
1000 units on Box
5000 units on Carton
1000 units on Box
5000 units on Carton
Absolute Maximum Ratings Ta=25 ºC unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-source Voltage
V
DS
650
V
Gate-source Voltage
Continuous Drain Current(Ta=25
)
Drain Current-Pulsed
TO251
V
GS
D
±30
5
V
A
A
I
I
DM
20
55
50
30
30
150
TO252
TO220
TO220F
Total Dissipation
(Ta=25 )
P
D
W
Junction Temperature
T
J
ºC
Storage Temperature
Single Pulse Avalanche Energy
ESD HBM(Human Body Mode)
ESD MM(Machine Mode)
T
STG
-65 to 150
210
ºC
mJ
V
E
AS
≥2000
≥200
V
Electrical Characteristics Ta = 25
ºC
PARAMETER
Symbol
Test Condition
=250μA
=250μA
MIN
650
2.0
TYP
MAX
UNIT
V
Drain-source Breakdown Voltage
Gate Threshold Voltage
V
GS
=0V, I
D
BV
DSS
4.0
25
V
V
GS(TH)
V
GS
=V
DS
,I
D
V
DS
=650V,V
GS
=0V
GS
=0V I
GS
=±30V
uA
V
Drain-source Leakage Current
I
DSS
V
S
=
5
A
1.4
±100
2.3
Drain-Source Diode Forward Voltage
Gate-body Leakage Current (V
DS
= 0)
V
SD
V
nA
Ω
I
GSS
V
GS
=10V,I
D
=2.5A
1.9
Static Drain-source On Resistance
R
DS(ON)
2
V01
SMIRF5N65
Thermal Characteristics
Ta=25
℃
PARAMETER
Symbol
TYP
MAX
UNIT
ºC/W
ºC/W
2.5
TO251,TO252
Maximum Junction-to-case (note1)
R
QJC
QJA
3
TO220F,TO220
TO251,TO252
63
80
Maximum Junction-to-Ambient
R
ºC/W
TO220F,TO220
Note1:
Surface Mounted on FR4 Board, t ≤ 10 sec
Dynamic Characteristics Ta = 25
ºC
PARAMETER
Symbol
Test Condition
MIN
TYP
MAX
UNIT
C
iss
560
600
78
pF
Input Capacitance
output Capacitance
70
8
pF
pF
C
oss
V
DS
=25V,V
GS
=0V, f=1.0MHZ
Reverse Transfer
Capacitance
10
C
rss
Switching Characteristics Ta=25
ºC
PARAMETER
Symbol
Test Condition
MIN
TYP
MAX
UNIT
Td(on)
13
26
nS
Turn-On Delay Time
Turn-On Rise Time
45
38
35
8
nS
nS
nS
Tr
V
V
DS
=300V,I
D
=
5
A,R =25Ω
G
Turn-Off Delay Time
120
85
Td(off)
Tf
Turn-Off Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
15
2.5
6.6
nC
nC
nC
Qg
DS
=480V I
=
5
A,V
GS
=10V
D
Qgs
Qgd
Drain-Source Diode Maximum Ratings and Characteristics Ta=25
ºC
PARAMETER
Max. Diode Forward Current
Pulsed Source Current
Symbol
Test Condition
MIN
TYP
MAX
UNIT
Is
5
A
Integral Reverse P-N
Junction Diode in the
MOSFET
Ism
20
1.5
V
Diode Forward Voltage
Reverse Recovery Time
V
SD
V
GS
=0V,I
S
=
5
A
270
1.9
nS
μC
Trr
V
GS
=0V,I
S
=
5
A,
dIF/dt=100A/μs
Reverse Recovery Charge
Qrr
3
V01
SMIRF5N65
Test Circuit
Gate Charge
T
e
st Circuit & Waveform
Resistive Switching
T
e
st Circuit & Waveform
Unclamped Inductive Switching
T
e
st Circuit & Waveform
4
V01
SMIRF5N65
Typical Electrical
And Thermal Characteristics
Figure 1: Output Characteristics
Figure 2: Transfer Characteristics
Figure 3: On Resistance Vs Drain Current
Figure 4: On Resistance Vs Gate
Source Voltage
Figure5: On
Resistance Vs Junction Temperature
Characteristics
Figure6: Capacitance
5
V01
SMIRF5N65
Characteristics Curve
Figure7: Gate Charge Waveform
Forward Voltage
Figure8: Source-Drain Diode
Figure9: Breakdown
Voltage Vs Junction Temperature
6
V01
