SPS-TIP41CT1TL

Part #SPS-TIP41CT1TL
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SPS-TIP41CT1TL
TIP41/41A/41B/41C  
Silicon NPN Power Transistors  
DESCRIPTION  
·
DC Current Gain -h

FE

= 30(Min)@ I

C

= –
0.3A  
·
Collector-Emitter Sustaining Voltage-  
: V

CEO(SUS)

= 40V(Min)- TIP41; 60V(Min)- TIP41A  
80V(Min)- TIP41B; 100V(Min)- TIP41C  
·
Complement to Type TIP42/42A/42B/42C  
APPLICATIONS  
·
Designed for use in general purpose amplifer and  
switching applications  
ABSOLUTE MAXIMUM RATINGS(T

a

=25
℃
)  
SYMBOL  
PARAMETER  
VALUE  
40  
UNIT  
TIP41  
TIP41A  
TIP41B  
TIP41C  
TIP41  
60  
V

CBO  

Collector-Base Voltage  
V
80  
100  
40  
TIP41A  
TIP41B  
TIP41C  
60  
V

CEO  

Collector-Emitter Voltage  
Emitter-Base Voltage  
V
80  
100  
5
V

EBO  

I

C  

I

CM  

I

B  

V
A
A
A
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
6
10  
2
Collector Power Dissipation  
T

C

=25
℃
 
65  
P

C  

W
Collector Power Dissipation  
T

a

=25
℃  
2
Junction
T
e
mperature  
150  
-65~150  
℃
℃
T

j  

Storage
T
e
mperature Range  
T

stg  

Ordering Information  
Product  
TIP41CT1TL  
Package  
TO-220C  
Packaging  
Tube  
V01  
1

TIP41/41A/41B/41C  
ELECTRICAL CHARACTERISTICS  
T

C

=25
℃
unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
40  
MAX  
UNIT  
TIP41  
TIP41A  
TIP41B  
TIP41C  
60  
Collector-Emitter  
Sustaining Voltage  
I

C

= 30mA; I

B

= 0  
V
V

CEO(SUS)  

*
80  
100  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
TIP41  
I

C

= 6A ;I

B

= 0.6A  
I

C

= 6A ; V

CE

= 4V  
V

CE

= 40V; V

EB

= 0  
V

CE

= 60V; V

EB

= 0  
V

CE

= 80V; V

EB

= 0  
V

CE

=100V; V

EB

= 0  
V

CE

=30V; I

B

= 0  
1.5  
2.0  
V
V
V

CE(sat)  

V

BE(on)  

*
*
TIP41A  
Collector Cutoff Current  
TIP41B  
I

CES  

0.4  
mA  
TIP41C  
TIP41/41A  
Collector Cutoff Current  
TIP41B/41C  
I

CEO  

0.7  
1.0  
mA  
mA  
V

CE

= 60V; I

B

= 0  
V

EB

= 5V; I

C

= 0  
I

EBO  

h

FE-1  

h

FE-2  

f

T  

Emitter Cutoff Current  
DC Current Gain  
I

C

=0.3A ; V

CE

=4V  
I

C

= 3A ; V

CE

= 4V  
I

C

= 0.5A ;V

CE

= 10V  
30  
15  
3
*
DC Current Gain  
75  
*
Current-Gain—Bandwidth Product  
MHz  
* Pulse
T
est: PW≤300μs, Duty Cycle≤2%  
V01  
2