SPTECH-MJD44H11
| Part # | SPTECH-MJD44H11 |
Download  | SPTECH-MJD44H11 |
SPTECH Product Specification
SPTECH
Silicon NPN Power Transistors
MJD4
4H11
DESCRIPTION
·
Low Collector-Emitter Saturation Voltage
: V
CE(sat
)= 1.0V(Max)@ I
C
= 8A
·
Fast Switching Speeds
·
Complement to Type MJD45H11
·
DPAK for Surface Mount Applications
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
)
SYMBOL
V
CEO
V
EBO
I
C
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
80
5
V
V
A
A
Collector Current-Continuous
Collector Current-Peak
8
I
CM
16
Collector Power Dissipation
@T
C
=25
℃
20
P
C
W
Collector Power Dissipation
@T
a
=25
℃
1.75
T
j
Junction
T
e
mperature
150
℃
℃
Storage
T
e
mperature Range
-55~150
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
MAX
UNIT
℃
/W
℃
/W
Thermal Resistance, Junction to Case
6.25
Thermal Resistance,Junction to Ambient
71.4
R
th j-a
1
SPTECH Product Specification
SPTECH
Silicon NPN Power Transistors
MJD44H11
ELECTRICAL CHARACTERISTICS
T
C
=25
℃
unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CES
PARAMETER
CONDITIONS
MIN
TYP
MAX
V
UNIT
Collector-Emitter Sustaining Voltage
I
C
= 30mA; I
B
= 0
80
Collector-EmitterSaturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 8A ;I
B
= 0.4 A
1.0
1.5
1.0
1.0
V
I
C
= 8A ;I
B
= 0.8 A
V
V
CE
=Rated V
CEO
; V
BE
= 0
V
EB
= 5V; I
C
= 0
μ
A
μ
A
I
EBO
h
FE-1
DC Current Gain
I
C
= 2A ; V
CE
= 1V
60
40
h
FE-2
DC Current Gain
I
C
= 4A ; V
CE
= 1V
Output Capacitance
V
CB
= 10
V
,
f= 1.0MHz
I
C
=0.5A;V
CE
= 10V;f
test
=20MHz
45
40
pF
C
OB
f
T
Current-Gain—Bandwidth Product
MHz
Switching Times; Resistive Load
td+tr
t
s
Delay and Rise Time
Storage Time
Fall Time
300
500
140
ns
ns
ns
I
C
= -5A;
I
B1
= I
B2
= -0.5A
t
f
2
