SPTECH-TIP160
| Part # | SPTECH-TIP160 |
Download  | SPTECH-TIP160 |
SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP160
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 320V(Min)
·
Low Collector-Emitter Saturation Voltage-
: V
CE (sat)
= 2.9V(Max.)@ I
C
= 10A
APPLICATIONS
·
Designed for use in automotive ignition, switching and
motor control applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
320
320
5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
10
A
I
CM
15
A
I
B
1.0
A
Collector Power Dissipation
@T
C
=25
℃
P
C
125
150
-65~150
W
℃
℃
T
j
Junction
T
e
mperature
Storage
T
e
mperature Range
T
stg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.0
℃
/W
R
th j-c
1
SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP160
ELECTRICAL CHARACTERISTICS
T
C
=25
℃
unless otherwise specified
SYMBOL
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
(sat)
I
CEO
PARAMETER
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff current
CONDITIONS
MIN
TY
P
.
MAX
UNIT
V
I
C
= 6.5A,I
B
= 0.1A
2.8
2.9
2.2
1.0
10
I
C
= 10A, I
B
= 1A
I
C
= 6.5A,I
B
= 0.1A
V
CE
= 320
V
,
I
B
= 0
V
EB
= 5V; I
C
= 0
I
C
= 4A; V
CE
= 2.2V
I
F
= 10A
V
V
mA
mA
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
200
V
F
C-E Diode Forward Voltage
3.5
V
Switching Times
Delay Time
0.3
1.5
2.3
2.8
μ
s
μ
s
μ
s
μ
s
t
d
Rise Time
Storage Time
Fall Time
t
r
V
CC
= 33V, I
C
= 6.5A,
I
B1
= -I
B2
= 100mA;
t
p
= 20
μ
s; Duty Cycle
≤
2%
t
stg
t
f
2
