ST-Semtech-2N2222A

2N2222 / 2N2222A  

NPN Silicon Epitaxial Planar Transistor  

for switching and AF amplifier applications.  

The transistor is subdivided into one group  

according to its DC current gain.  

On special request, these transistors can be  

manufactured in different pin configurations.  

1. Emitter 2. Base 3. Collector  

TO-92 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

V

CBO  

Value  

Unit  

V

Collector Base Voltage  

2N2222  

2N2222A  

2N2222  

2N2222A  

2N2222  

2N2222A  

60  

75  

30  

40  

5

Collector Emitter Voltage  

Emitter Base Voltage  

V

CEO  

V

EBO  

V

V

6

Collector Current  

I

C  

P

tot  

T

j  

600  

625  

mA  

Power Dissipation  

mW  

O

C

Junction Temperature  

Storage Temperature Range  

150  

O

C

T

stg  

– 55 to + 150  

SEMTECH ELECTRONICS LTD.  

®

Dated : 12/08/2016

 

Rev:02  

2N2222 / 2N2222A  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 10 V, I

C

= 0.1 mA  

at V

CE

= 10 V, I

C

= 1 mA  

at V

CE

= 10 V, I

C

= 10 mA  

at V

CE

= 10 V, I

C

= 150 mA  

at V

CE

= 10 V, I

C

= 500 mA  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

35  

50  

75  

100  

30  

40  

–

–

–

–

–

–

–

–

–

300  

–

–

2N2222  

2N2222A  

Collector Base Cutoff Current  

at V

CB

= 50 V  

at V

CB

= 60 V  

2N2222  

2N2222A  

–

–

10  

10  

I

CBO  

nA  

Collector Base Breakdown Voltage  

at I

C

= 10 µA  

2N2222  

2N2222A  

60  

75  

–

–

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

V

V

V

Collector Emitter Breakdown Voltage  

at I

C

= 10 mA  

2N2222  

2N2222A  

30  

40  

–

–

Emitter Base Breakdown Voltage  

at I

E

= 10 µA  

2N2222  

2N2222A  

5

6

–

–

Collector Emitter Saturation Voltage  

at I

C

= 150 mA, I

B

= 15 mA  

2N2222  

2N2222A  

2N2222  

2N2222A  

–

–

–

–

0.4  

0.3  

1.6  

1

V

CE(sat)  

V

V

at I

C

= 500 mA, I

B

= 50 mA  

Base Emitter Saturation Voltage  

at I

C

= 150 mA, I

B

= 15 mA  

2N2222  

2N2222A  

2N2222  

2N2222A  

–

0.6  

–

1.3  

1.2  

2.6  

2

V

BE(sat)  

at I

C

= 500 mA, I

B

= 50 mA  

–

Gain Bandwidth Product  

at I

C

= 20 mA, V

CE

= 20 V, f = 100 MHz  

f

T  

250  

–

–

MHz  

pF  

Collector Output Capacitance  

at V

CB

= 10 V, f = 1 MHz  

C

ob  

8

SEMTECH ELECTRONICS LTD.  

®

Dated : 12/08/2016

 

Rev:02  

2N2222 / 2N2222A  

SEMTECH ELECTRONICS LTD.  

®

Dated : 12/08/2016

 

Rev:02