ST-Semtech-2N4401

2N4400 / 2N4401  

NPN Epitaxial Silicon Transistor  

General purpose transistor  

On special request, these transistors can be  

manufactured in different pin configurations.  

1. Emitter 2. Base 3. Collector  

TO-92 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

Value  

60  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

V

CBO  

V

CEO  

V

EBO  

I

C  

40  

V

6

600  

V

mA  

mW  

Power Dissipation  

P

tot  

T

j  

625  

O

C

Junction

T

e

mperature  

Storage

T

e

mperature Range  

150  

O

C

T

stg  

– 55 to + 150  

SEMTECH ELECTRONICS LTD.  

®

Dated : 12/08/2016

 

Rev: 01  

2N4400 / 2N4401  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 1

V

,

I

C

= 0.1 mA  

at V

CE

= 1

V

,

I

C

= 1 mA  

2N4401  

2N4400  

2N4401  

2N4400  

2N4401  

2N4400  

2N4401  

2N4400  

2N4401  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

20  

20  

40  

40  

58  

50  

100  

20  

40  

–

–

–

–

–

–

–

–

–

–

–

–

–

at V

CE

= 1

V

,

I

C

= 10 mA  

at V

CE

= 1

V

,

I

C

= 150 mA  

at V

CE

= 2

V

,

I

C

= 500 mA  

–

150  

300  

–

–

Collector Base Cutoff Current  

at V

CB

= 35 V  

I

CBO  

–

–

100  

nA  

nA  

V

Emitter Base Cutoff Current  

at V

EB

= 5 V  

100  

I

EBO  

Collector Base Breakdown Voltage  

at I

C

= 100 µA  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

60  

40  

6

–

–

–

Collector Emitter Breakdown Voltage  

at I

C

= 1 mA  

V

Emitter Base Breakdown Voltage  

at I

E

= 100 µA  

V

Collector Emitter Saturation Voltage  

at I

C

= 150 mA, I

B

= 15 mA  

at I

C

= 500 mA, I

B

= 50 mA  

–

–

0.4  

0.75  

V

CE(sat)  

V

V

Base Emitter Saturation Voltage  

at I

C

= 150 mA, I

B

= 15 mA  

at I

C

= 500 mA, I

B

= 50 mA  

0.75  

–

0.95  

1.2  

V

BE(sat)  

Gain Bandwidth Product  

at V

CE

= 10

V

,

I

C

= 20 mA, f = 100 MHz  

2N4400  

2N4401  

200  

250  

–

–

f

T  

C

ob  

t

on  

MHz  

pF  

Collector Output Capacitance  

at V

CB

= 5

V

, f =

1

00 MHz  

–

–

–

12  

35  

Turn On Time  

at V

CC

= 30

V

,

V

BE

= 2

V

, I

C

= 150 mA, I

B1

= 15 mA  

ns  

Turn Off Time  

at V

CC

= 30

V

,

I

C

= 150 mA, I

B1

= I

B2

=15 mA  

t

off  

255  

ns  

SEMTECH ELECTRONICS LTD.  

®

Dated : 12/08/2016

 

Rev: 01  

2N4400 / 2N4401  

SEMTECH ELECTRONICS LTD.  

®

Dated : 12/08/2016

 

Rev: 01  

2N4400 / 2N4401  

SEMTECH ELECTRONICS LTD.  

®

Dated : 12/08/2016

 

Rev: 01