ST-Semtech-2N4403

2N4402 / 2N4403  

PNP Epitaxial Silicon Transistor  

General purpose transistor  

On special request, these transistors can be  

manufactured in different pin configurations.  

1. Emitter 2. Base 3. Collector  

TO-92 Plastic Package  

Absolute Maximum Ratings (T

a

= 25

℃

)  

Parameter  

Symbol  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

40  

40  

V

5

600  

V

mA  

mW  

℃

Power Dissipation  

P

tot  

625  

Junction

T

e

mperature  

Storage

T

e

mperature Range  

T

j  

150  

T

stg  

– 55 to + 150  

℃

SEMTECH ELECTRONICS LTD.  

®

Dated: 12/08/2016

 

Rev: 02  

2N4402 / 2N4403  

Characteristics at T

a

= 25

℃  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 1

V

,

–

I

C

= 0.1 mA  

at -V

CE

= 1

V

,

–

I

C

= 1 mA  

2N4403  

2N4402  

2N4403  

2N4402  

2N4403  

2N4402  

2N4403  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

30  

30  

60  

50  

100  

50  

–

–

–

–

–

–

–

–

–

–

–

–

–

at -V

CE

= 1

V

,

–

I

C

= 10 mA  

at -V

CE

= 1

V

,

–

I

C

= 150 mA  

at -V

CE

= 2

V

,

–

I

C

= 500 mA  

150  

300  

–

100  

20  

Collector Base Cutoff Current  

at -V

CB

= 35 V  

-I

CBO  

–

–

100  

nA  

nA  

V

Emitter Base Cutoff Current  

at -V

EB

= 5 V  

100  

-I

EBO  

Collector Base Breakdown Voltage  

at -I

C

= 100 µA  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

40  

40  

5

–

–

–

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

V

Emitter Base Breakdown Voltage  

at -I

E

= 100 µA  

V

Collector Emitter Saturation Voltage  

at -I

C

= 150 mA, -I

B

= 15 mA  

at -I

C

= 500 mA, -I

B

= 50 mA  

–

–

0.4  

0.75  

-V

CE(sat)  

V

V

Base Emitter Saturation Voltage  

at -I

C

= 150 mA, -I

B

= 15 mA  

at -I

C

= 500 mA, -I

B

= 50 mA  

0.75  

–

0.95  

1.3  

-V

BE(sat)  

Gain Bandwidth Product  

at -V

CE

= 10

V

,

–

I

C

= 20 mA, f = 100 MHz  

2N4402  

2N4403  

150  

200  

–

–

f

T  

C

ob  

t

on  

MHz  

pF  

Collector Output Capacitance  

at -V

CB

= 10

V

, f =

1

40 MHz  

–

–

–

8.5  

35  

Turn On Time  

at -V

CC

= 30

V

,

–

V

BE

= 2

V

,

–

I

C

= 150 mA, -I

B1

= 15 mA  

ns  

Turn Off Time  

at -V

CC

= 30

V

,

–

I

C

= 150 mA, -I

B1

= -I

B2

=15 mA  

t

off  

255  

ns  

SEMTECH ELECTRONICS LTD.  

®

Dated: 12/08/2016

 

Rev: 02  

2N4402 / 2N4403  

Figure 1.  

Figure 2.  

Figure 3.  

Figure 4.  

Figure 5.  

SEMTECH ELECTRONICS LTD.  

®

Dated: 12/08/2016

 

Rev: 02  

2N4402 / 2N4403  

Figure 6.  

Figure 7.  

Figure 8.  

Figure 9.  

Figure 10.  

Figure 11.  

SEMTECH ELECTRONICS LTD.  

®

Dated: 12/08/2016

 

Rev: 02  

2N4402 / 2N4403  

Figure 12.  

Figure 13.  

Figure 14.  

Figure 15.  

SEMTECH ELECTRONICS LTD.  

®

Dated: 12/08/2016

 

Rev: 02