ST-Semtech-2SA1015G
| Part # | ST-Semtech-2SA1015G |
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2SA1015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y
and G, L , according to its DC current gain. As
complementary type the NPN transistor
2SC1815 is recommended.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
O
Absolute Maximum Ratings (T
a
= 25
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
Value
Unit
V
50
50
V
5
150
V
mA
mA
mW
Base Current
-I
B
50
Power Dissipation
P
tot
400
O
Junction Temperature
Storage Temperature Range
T
j
150
C
O
C
T
stg
– 55 to + 150
O
Characteristics at T
a
= 25
C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -V
CE
= 6 V, -I
C
= 2 mA
Current Gain Group
O
h
FE
h
FE
h
FE
h
FE
h
FE
70
120
200
350
25
140
240
400
700
–
–
–
–
–
–
Y
G
L
at -V
CE
= 6 V, -I
C
= 150 mA
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
Collector Base Cutoff Current
at -V
CB
= 50 V
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-I
CBO
50
50
5
–
–
V
V
–
V
–
0.1
0.1
0.3
1.1
–
µA
µA
V
Emitter Cutoff Current
at -V
EB
= 5 V
-I
EBO
–
Collector Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 10 mA
Base Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 10 mA
Gain Bandwidth Product
at -V
CE
= 10 V, -I
C
= 1 mA
Output Capacitance
-V
CE(sat)
-V
BE(sat)
f
T
–
–
V
80
–
MHz
pF
C
OB
7
at -V
CB
= 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
®
Dated : 17/08/2016
Rev:01
2SA1015
SEMTECH ELECTRONICS LTD.
®
Dated : 17/08/2016
Rev:01
