ST-Semtech-2SA1797QU

2SA1797U  

PNP Silicon Epitaxial Planar Transistor  

Medium power transistor  

Absolute Maximum Ratings (T

a

= 25

℃

)  

Parameter  

Symbol  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

50  

50  

V

6

V

Collector Current  

2

A

Collector Current (P

w

= 20 ms)  

Collector Power Dissipation  

Junction Temperature  

-I

CP  

3

0.5  

A

P

C  

W

℃

℃

T

j  

150  

Storage Temperature Range  

T

stg  

– 55 to + 150  

Thermal Characteristics  

Parameter  

Symbol  

R

θJA  

Max.  

250  

Unit  

Thermal Resistance from Junction to Ambient

1)  

℃

/W  

1)  

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  

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Dated: 17/04/2023 Rev: 04  

2SA1797U  

Characteristics at T

a

= 25

℃  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 2 V, -I

C

= 500 mA  

Current Gain Group  

P

Q

R

h

FE  

h

FE  

h

FE  

82  

120  

180  

–

–

–

180  

270  

390  

–

–

–

Collector Base Cutoff Current  

at -V

CB

= 50 V  

-I

CBO  

-I

EBO  

–

–

–

100  

nA  

nA  

V

Emitter Base Cutoff Current  

at -V

EB

= 5 V  

–

100  

Collector Base Breakdown Voltage  

at -I

C

= 50 µA  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

-V

CE(sat)  

-V

BE(sat)  

f

T  

50  

50  

6

–

–

–

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

–

–

–

V

Emitter Base Breakdown Voltage  

at -I

E

= 50 µA  

–

0.35  

1.1  

–

V

Collector Emitter Saturation Voltage  

at -I

C

= 1 A, -I

B

= 50 mA  

–

V

Base Emitter Saturation Voltage  

at -I

C

= 1 A, -I

B

= 50 mA  

–

–

V

Transition Frequency  

at -V

CE

= 2 V, -I

C

= 500 mA, f = 100 MHz  

–

200  

20  

MHz  

pF  

Collector Output Capacitance  

at -V

CB

= 10 V, f = 1 MHz  

C

ob  

–

–

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Dated: 17/04/2023 Rev: 04  

2SA1797U  

Electrical Characteristics Curves  

Fig. 1 Output Characteristics Curve  

Fig 2. Power Derating Curve  

Fig. 3 Collector Current vs. V

BE  

Fig 4. DC Current Gain vs. Collector Current  

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Dated: 17/04/2023 Rev: 04  

2SA1797U  

Electrical Characteristics Curves  

Fig 5. V

BE(sat)

vs. Collector Current  

Fig 6. V

CE(sat)

vs. Collector Current  

Fig 7. Output Capacitance  

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Dated: 17/04/2023 Rev: 04  

2SA1797U  

Package Outline (Dimensions in mm)  

SOT-89  

D

bp  

E

L

HE  

1

2

3

F

F

C

L1  

e

e

A

Unit  

mm  

A

bp  

C

D

E

F

HE  

e

L

L1  

1.6  

1.4  

1.60  

1.50  

0.5  

0.3  

4.6  

4.4  

2.6  

2.4  

0.45  

0.35  

4.25  

3.75  

1.5  

typ.  

1.05  

0.95  

0.51  

0.41  

Recommended Soldering Footprint  

1.8  

3.4  

3.8  

90  

°

1.5  

1

1

3

Packing information  

Pitch  

Reel Size  

Tape Width  

Package  

Per Reel Packing Quantity  

(mm)  

mm  

inch  

mm  

inch  

7

178  

330  

1,000  

4,000  

SOT-89  

12  

8 ± 0.1  

0.315 ± 0.004  

13  

Marking information  

” 2SA1797*U ” = Part No. (” * ” = HFE grouping Code)  

“YM” = Date Code Marking  

“Y” = Year  

2SA1797*U  

“M” = Month  

Font type: AriaI  

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Dated: 17/04/2023 Rev: 04