ST-Semtech-2SA733P

2SA733  

PNP Silicon Epitaxial Planar Transistor  

for switching and AF amplifier applications.  

The transistor is subdivided into five groups, R, O,  

Y, P and L, according to its DC current gain. As  

complementary type the NPN transistor 2SC945 is  

recommended.  

On special request, these transistors can be  

manufactured in different pin configurations.  

1. Emitter 2. Collector 3. Base  

TO-92 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Symbol  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  

Unit  

V

60  

V

50  

V

5

150  

Collector Current  

mA  

mW  

Power Dissipation  

P

tot  

250  

O

Junction Temperature  

Storage Temperature Range  

T

j  

150  

C

O

C

T

stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 6 V, -I

C

= 1 mA  

Current Gain Group  

R

O

Y

P

L

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

40  

70  

120  

200  

350  

–

–

–

–

–

80  

–

–

–

–

–

140  

240  

400  

700  

Collector Base Cutoff Current  

at -V

CB

= 60 V  

-I

CBO  

-I

EBO  

–

–

–

100  

nA  

nA  

V

Emitter Base Cutoff Current  

at -V

EB

= 5 V  

–

100  

Collector Base Breakdown Voltage  

at -I

C

= 100 µA  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

-V

CE(sat)  

-V

BE(on)  

f

T  

–

–

60  

50  

5

Collector Emitter Breakdown Voltage  

at -I

C

= 10 mA  

–

–

–

V

Emitter Base Breakdown Voltage  

at -I

E

= 10 µA  

–

V

Collector Emitter Saturation Voltage  

at -I

C

= 100 mA, -I

B

= 10 mA  

–

–

–

0.3  

0.8  

–

V

Base Emitter On Voltage  

at -V

CE

= 6 V, -I

C

= 1 mA  

0.5  

50  

–

V

Gain Bandwidth Product  

at -V

CE

= 6 V, -I

C

= 10 mA  

–

MHz  

pF  

Collector Output Capacitance  

at -V

CB

= 10 V, f = 1 MHz  

C

ob  

2.8  

–

SEMTECH ELECTRONICS LTD.  

®

Dated : 17/08/2016

 

Rev:01  

2SA733  

I

C

– V

BE  

Total power dissipation  

vs. ambient temperature  

-200  

-100  

V

CE

=-6V  

300  

250  

200  

Free air  

C

75  

Ta=  

50  

C

-10  

-1  

25  

0

C

150  

100  

C

C

-25  

50  

0

-0.1  

150  

25  

50  

75  

-0.9 -1  

125  

100  

-0.7 -0.8  

-0.4  

-0.6  

-0.5  

Tamb (

 

C)  

V

BE

, V  

Collector current vs.  

collector emitter voltage  

Collector current vs.  

collector emitter voltage  

-2.0  

-1.8 -1.6  

-100  

-80  

-10  

-8  

-1.4  

-45  

-1.2  

-1.0  

-40  

-35  

-0.8  

-0.6  

-30  

-25  

-60  

-40  

-20  

-6  

-4  

-2  

-0.4  

-20  

-15  

-10  

I

B

=-0.2mA  

IB=-5  

A

0

0

0

0

-0.2 -0.4

 

-0.6 -0.8

 

-1.0  

-10  

-20 -30  

-40 -50  

V

CE

, V  

V

CE

, V  

hFE –

I

C  

hFE –

I

C  

1000  

1000  

VCE=-6V  

50  

C

Ta=75  

C

C

VCE=-6V  

-1V  

100  

100  

-25  

C

0

C

25  

10  

10  

-100  

-100  

-10  

-10  

-0.1  

-0.1  

-1  

-1  

I

C, mA  

I

C, mA  

SEMTECH ELECTRONICS LTD.  

®

Dated : 17/08/2016

 

Rev:01  

2SA733  

VCE(sat), VBE(sat) – I

C  

-1  

f

T

– I

E  

VBE(sat)  

500  

100  

VCE= -6V  

-1V  

-0.1  

VCE(sat)  

IC/IB=10  

IC/IB=10  

10  

-0.01  

-1  

1

-100  

100  

-10  

10  

I

C, mA  

I

E, mA  

Normalized h-parameters  

vs. collector emitter voltage  

Normalized h-parameters  

vs. emitter current  

100  

100  

10  

1

VCE=-6V, IE=1mA, f=1kHz  

VCE=-6V, IE=1mA, f=1kHz  

hie=5.5k ,

 

hre=7.5×10  

-4  

-4  

hie=5.5k ,

 

hre=7.5×10  

hfe=20s, hoe=28  

s

hfe=20s, hoe=28  

s

hoe  

10  

1

hie  

hre  

hoe  

hre  

hfe  

hie  

hfe  

hre  

hie  

hfe  

hre  

hfe  

hoe  

hoe  

hie  

0.1  

0.1  

100  

-100  

0.1  

1

10  

-0.1  

-1  

-10  

IE, mA  

VCE, V  

Cob – V

CB  

100  

f=1MHz  

10  

1

-1  

-100  

-10  

V

CB, V  

SEMTECH ELECTRONICS LTD.  

®

Dated : 17/08/2016

 

Rev:01