ST-Semtech-2SC4672U-H4031
| Part # | ST-Semtech-2SC4672U-H4031 |
Download  | ST-Semtech-2SC4672U-H4031 |
2SC4672U-H4031
NPN Silicon Epitaxial Planar Transistor
Low Frequency Transistor
Absolute Maximum Ratings (T
a
= 25
℃
)
Parameter
Symbol
V
CBO
Value
60
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
V
CEO
50
V
V
EBO
6
V
Collector Current – DC
Collector Current – Pulse
1)
I
C
I
CP
3
6
A
0.5
2
2)
P
tot
W
Total Power Dissipation
Junction
T
emperature
T
j
150
℃
℃
Storage Temperature Range
T
stg
– 55 to + 150
1)
Single pulse, PW = 10 ms.
2)
When mounted on a 40 X 40 X 0.7 mm ceramic board.
Characteristics at T
a
= 25
℃
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 2
V
,
I
C
= 0.5 A
at V
CE
= 2
V
,
I
C
= 1.5 A
h
FE
h
FE
120
45
–
–
270
–
–
–
Collector Base Cutoff Current
at V
CB
= 60 V
I
CBO
I
EBO
–
–
–
100
nA
nA
V
Emitter Base Cutoff Current
at V
EB
= 5 V
–
100
Collector Base Breakdown Voltage
at I
C
= 50 µA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
f
T
60
50
6
–
–
–
–
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
–
V
Emitter Base Breakdown Voltage
at I
E
= 50 µA
–
–
V
Collector Emitter Saturation Voltage
at I
C
= 1 A, I
B
= 50 mA
–
0.35
V
Transition Frequency
at V
CE
= 5
V
,
–
I
E
= 0.5 A, f = 100 MHz
–
210
25
–
–
MHz
pF
Output Capacitance
at V
CB
= 10
V
, f = 1
M
Hz
C
ob
–
®
Dated
：
12/08/2016 Rev
：
03
2SC4672U-H4031
®
Dated
：
12/08/2016 Rev
：
03
2SC4672U-H4031
SOT-89 PACKAGE OUTLINE
Dimensions in mm
®
Dated
：
12/08/2016 Rev
：
03
